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ADATA Ultimate SU800 256 GB (Samsung V4)

256 GB
Capacity
SM2258H
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The ADATA Ultimate SU800 is a solid-state drive in the 2.5" form factor, launched in 2021. It is available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the ADATA Ultimate SU800 interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2258H from Silicon Motion, a DRAM cache chip is available. ADATA has installed 64-layer TLC NAND flash on the Ultimate SU800, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The Ultimate SU800 is rated for sequential read speeds of up to 560 MB/s and 520 MB/s write; random IOPS reach up to 80K for reads and 85K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. ADATA guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2021
Part Number: ASU800SS-256GT-C
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.06 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2258H
Architecture: ARC
Core Count: Single-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 40 nm
Flash Channels: 4
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: Unknown
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: DDR3-1600 CL11
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 520 MB/s
Random Read: 80,000 IOPS
Random Write: 85,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

Jun 1st, 2024 18:32 EDT change timezone

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