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HP EX950 512 GB

512 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Tweaktown
Package
DRAM
Tweaktown
DRAM
Flash
Tweaktown
Flash
SSD Controller
Controller
NAND Die
NAND Die
The HP EX950 was a solid-state drive in the M.2 2280 form factor, launched on January 9th, 2019, that is no longer in production. It was available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the HP EX950 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. HP has installed 64-layer TLC NAND flash on the EX950, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The EX950 is rated for sequential read speeds of up to 3,500 MB/s and 2,250 MB/s write; random IOPS reach up to 390K for reads and 370K for writes.
At its launch, the SSD was priced at 87 USD. The warranty length is set to five years, which is an excellent warranty period. HP guarantees an endurance rating of 320 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Jan 9th, 2019
Price at Launch: 87 USD
Part Number: 5MS23AA#UUF
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Rebranded: BW291T08EMHAF (Rebranded by HP/Biwin)
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: NANYA NT5CC128M16JR-EK
Capacity: 512 MB
(2x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,250 MB/s
Random Read: 390,000 IOPS
Random Write: 370,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

May 18th, 2024 01:22 EDT change timezone

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