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Samsung 850 EVO 250 GB (Samsung V2)

250 GB
Capacity
Samsung MGX
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
PCB Front
TweakTown
PCB Front
PCB Back
TweakTown
PCB Back
DRAM
TweakTown
DRAM
Flash
TweakTown
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 850 EVO was a solid-state drive in the 2.5" form factor, launched on December 8th, 2014, that is no longer in production. It was available in capacities ranging from 120 GB to 2 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Samsung 850 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MGX (S4LN062X01) from Samsung, a DRAM cache chip is available. Samsung has installed 32-layer TLC NAND flash on the 850 EVO, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 3 GB, once it is full, writes complete at 300 MB/s. The 850 EVO is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IOPS reach up to 97K for reads and 88K for writes.
At its launch, the SSD was priced at 150 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 75 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 120 GB 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 23.2 GB / 10.0 %
Production: End-of-life
Released: Dec 8th, 2014
Price at Launch: 150 USD
Part Number: MZ-75E250
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
3.7 W (Avg)
4.4 W (Max)

Controller

Manufacturer: Samsung
Name: MGX (S4LN062X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Dual-Core
Frequency: 550 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8

NAND Flash

Manufacturer: Samsung
Name: V-NAND V2
Part Number: K9OKGY8S7C-CCK0
Type: TLC
Technology: 32-layer
Speed: 533 MT/s .. 1000 MT/s
Capacity: 2 chips @ 1 Tbit
Topology: Charge Trap
Process: 40 nm
Die Size: 69 mm²
(1.9 Gbit/mm²)
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 1
Decks per Die: 1
Word Lines: 39 per NAND String
82.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 50 MB/s
Endurance:
(up to)
7000 P/E Cycles
(20500 in SLC Mode)
Page Size: 16 KB
Block Size: 384 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: LPDDR2-1066
Name: SAMSUNG K4E4E164EE-SGCE
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 97,000 IOPS
Random Write: 88,000 IOPS
Endurance: 75 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 3 GB
(static only)
Speed when Cache Exhausted: approx. 300 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Rev 2: SAMSUNG V3 V-NAND 48-Layers
Rev 3: SAMSUNG V4 V-NAND 64-Layers

Controller:

Could be 4 or 8 Channels

NAND Die:

tPROG with overhead: 700 µs (Avg 45.7 MB/s per die)
PS: Although it's a single plane NAND it has a sub plane with 8 KiB pages

Jun 1st, 2024 19:13 EDT change timezone

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