Capacity: | 1.9 TB (1920 GB) |
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Variants: | 960 GB 1.9 TB 3.8 TB 7.5 TB 15 TB 31 TB |
Overprovisioning: | 259.9 GB / 14.5 % |
Production: | Active |
Released: | 2022 |
Part Number: | MZILG1T9HCJR |
Market: | Enterprise |
Form Factor: | 2.5" |
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Interface: | SAS 24 Gbps |
Protocol: | Unknown |
Power Draw: |
Unknown (Idle) 11.5 W (Avg) 14.7 W (Max) |
Manufacturer: | Samsung |
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Name: | RGX Rhino |
Architecture: | ARM 32-bit Cortex-R8 |
Foundry: | Samsung FinFET |
Process: | 8 nm |
Flash Channels: | 16 |
Chip Enables: | 8 |
Controller Features: | DRAM |
Manufacturer: | Samsung |
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Name: | V-NAND V6 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 800 MT/s .. 1200 MT/s |
Capacity: | Unknown |
Toggle: | 4.0 |
Topology: | Charge Trap |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 400 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 84 MB/s |
Page Size: | 16 KB |
Type and Size: | Unknown |
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Sequential Read: | 4,200 MB/s |
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Sequential Write: | 2,400 MB/s |
Random Read: | 720,000 IOPS |
Random Write: | 85,000 IOPS |
Endurance: | 3504 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 1.0 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:This die, in theory should have half the block count per each plane |