Capacity: | 31 TB (30720 GB) |
---|---|
Variants: | 960 GB 1.9 TB 3.8 TB 7.5 TB 15 TB 31 TB |
Overprovisioning: | 4157.8 GB / 14.5 % |
Production: | Active |
Released: | 2022 |
Part Number: | MZILG30THBLA |
Market: | Enterprise |
Form Factor: | 2.5" |
---|---|
Interface: | SAS 24 Gbps |
Protocol: | Unknown |
Power Draw: |
Unknown (Idle) 11.5 W (Avg) 14.7 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | RGX Rhino |
Architecture: | ARM 32-bit Cortex-R8 |
Foundry: | Samsung FinFET |
Process: | 8 nm |
Flash Channels: | 16 |
Chip Enables: | 8 |
Controller Features: | DRAM |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V6 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1200 MT/s |
Capacity: | Unknown |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 102 mm² (5.0 Gbit/mm²) |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 82 MB/s |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Type and Size: | Unknown |
---|
Sequential Read: | 4,200 MB/s |
---|---|
Sequential Write: | 3,700 MB/s |
Random Read: | 800,000 IOPS |
Random Write: | 140,000 IOPS |
Endurance: | 56064 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 1.0 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism. |