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Samsung PM9A3 1.9 TB

1.9 TB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.3
Form Factor
PCB Front
proSSD
PCB Front
PCB Back
proSSD
PCB Back
DRAM
proSSD
DRAM
Flash
proSSD
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9A3 is a solid-state drive in the U.3 form factor, launched in February 2021. It is available in capacities ranging from 960 GB to 7.5 TB. This page reports specifications for the 1.9 TB variant. With the rest of the system, the Samsung PM9A3 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM9A3, the flash chips are made by Samsung. To improve write speeds, a cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9A3 is rated for sequential read speeds of up to 6,800 MB/s and 2,700 MB/s write; random IO reaches 850K IOPS for read and 130K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 3504 TBW, a high value.

Solid-State-Drive

Capacity: 1.9 TB (1920 GB)
Variants: 960 GB 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 259.9 GB / 14.5 %
Production: Active
Released: Feb 2021
Part Number: MZQL21T9HCJR-00A07
Market: Enterprise

Physical

Form Factor: U.3
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 3.5 W (Idle)
10.0 W (Avg)
12.5 W (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Part Number: K9DMGB8J1C-CCK0
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 8 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-3200
Name: Samsung K4A4G085WF-BCWE
Capacity: 2560 MB
(5x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 6,800 MB/s
Sequential Write: 2,700 MB/s
Random Read: 850,000 IOPS
Random Write: 130,000 IOPS
Endurance: 3504 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Unknown

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

This die, in theory should have half the block count per each plane

Jun 17th, 2024 04:35 EDT change timezone

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