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Samsung PM9A3 960 GB

960 GB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.3
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9A3 is a solid-state drive in the U.3 form factor, launched in February 2021. It is available in capacities ranging from 960 GB to 7.5 TB. This page reports specifications for the 960 GB variant. With the rest of the system, the Samsung PM9A3 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM9A3, the flash chips are made by Samsung. To improve write speeds, a cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9A3 is rated for sequential read speeds of up to 6,500 MB/s and 1,500 MB/s write; random IOPS reach up to 580K for reads and 70K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1752 TBW, a high value.

Solid-State-Drive

Capacity: 960 GB
Variants: 960 GB 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 129.9 GB / 14.5 %
Production: Active
Released: Feb 2021
Part Number: MZQL2960HCJR-00A07
Market: Enterprise

Physical

Form Factor: U.3
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 3.5 W (Idle)
8.0 W (Avg)
9.8 W (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: LPDDR4
Capacity: Unknown

Performance

Sequential Read: 6,500 MB/s
Sequential Write: 1,500 MB/s
Random Read: 580,000 IOPS
Random Write: 70,000 IOPS
Endurance: 1752 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Unknown

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Jun 1st, 2024 15:48 EDT change timezone

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