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XPG SX8200 Pro 256 GB (Samsung V6)

256 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The XPG SX8200 Pro is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the XPG SX8200 Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. XPG has installed 128-layer TLC NAND flash on the SX8200 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The SX8200 Pro is rated for sequential read speeds of up to 3,500 MB/s and 1,200 MB/s write; random IO reaches 220K IOPS for read and 290K for writes.
At its launch, the SSD was priced at 70 USD. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 160 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2022
Price at Launch: 70 USD
Part Number: ASX8200PNP-256GT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 4 chips @ 512 Gbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 2 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: DDR3
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 1,200 MB/s
Random Read: 220,000 IOPS
Random Write: 290,000 IOPS
Endurance: 160 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

This die, in theory should have half the block count per each plane

Jun 1st, 2024 18:13 EDT change timezone

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