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XPG SX8200 Pro 512 GB (Samsung V6)

512 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The XPG SX8200 Pro is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the XPG SX8200 Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. XPG has installed 128-layer TLC NAND flash on the SX8200 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The SX8200 Pro is rated for sequential read speeds of up to 3,500 MB/s and 2,300 MB/s write; random IOPS reach up to 390K for reads and 380K for writes.
At its launch, the SSD was priced at 100 USD. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 320 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2022
Price at Launch: 100 USD
Part Number: ASX8200PNP-512GT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.07 W (Idle)
3.6 W (Avg)
4.9 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Rebranded: 60079535 (Rebranded by ADATA)
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: DDR3L-1866 CL13
Name: SAMSUNG K4B2G1646F-BYMA
Capacity: 512 MB
(2x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,300 MB/s
Random Read: 390,000 IOPS
Random Write: 380,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

This die, in theory should have half the block count per each plane

Jun 16th, 2024 06:34 EDT change timezone

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