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Patriot Viper VP4100 1 TB

1 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Kitguru
Package
PCB Back
Kitguru
PCB Back
SSD Controller
Controller
NAND Die
NAND Die
The Patriot Viper VP4100 was a solid-state drive in the M.2 2280 form factor, launched on September 12th, 2019, that is no longer in production. It was available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Patriot Viper VP4100 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Patriot has installed 96-layer TLC NAND flash on the Viper VP4100, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Viper VP4100 is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IOPS reach up to 800K for reads and 800K for writes.
At its launch, the SSD was priced at 220 USD. The warranty length is set to five years, which is an excellent warranty period. Patriot guarantees an endurance rating of 1800 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Sep 12th, 2019
Price at Launch: 220 USD
Part Number: VP4100-1TBM28H
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABBG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 800,000 IOPS
Random Write: 800,000 IOPS
Endurance: 1800 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)
Jun 2nd, 2024 19:23 EDT change timezone

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