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Silicon Power US70 1 TB

1 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Guru3D
Back
Flash
Guru3D
Flash
DRAM
Guru3D
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Silicon Power US70 was a solid-state drive in the M.2 2280 form factor, launched on June 15th, 2020, that is no longer in production. It was available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Silicon Power US70 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Silicon Power has installed 96-layer TLC NAND flash on the US70, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The US70 is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IOPS reach up to 750K for reads and 750K for writes.
At its launch, the SSD was priced at 175 USD. The warranty length is set to five years, which is an excellent warranty period. Silicon Power guarantees an endurance rating of 1800 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Jun 15th, 2020
Price at Launch: 175 USD
Part Number: SP01KGBP44US7005
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABBG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 750,000 IOPS
Random Write: 750,000 IOPS
Endurance: 1800 TBW
Warranty: 5 Years
MTBF: 1.7 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 2nd, 2024 19:29 EDT change timezone

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