Report an Error

Samsung 850 EVO 1 TB (Samsung V2)

1 TB
Capacity
Samsung MEX
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
PCB Front
Storage Review
PCB Front
PCB Back
Storage Review
PCB Back
DRAM
Storage Review
DRAM
Flash
Storage Review
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 850 EVO was a solid-state drive in the 2.5" form factor, launched on December 8th, 2014, that is no longer in production. It was available in capacities ranging from 120 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 850 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MEX (S4LN045X01) from Samsung, a DRAM cache chip is available. Samsung has installed 32-layer TLC NAND flash on the 850 EVO, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 12 GB, once it is full, writes complete at 520 MB/s. The 850 EVO is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IOPS reach up to 90K for reads and 98K for writes.
At its launch, the SSD was priced at 500 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 150 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 120 GB 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Dec 8th, 2014
Price at Launch: 500 USD
Part Number: MZ-75E1T0
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
3.7 W (Avg)
4.4 W (Max)

Controller

Manufacturer: Samsung
Name: MEX (S4LN045X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 400 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V2
Part Number: K9OKGY8S7C-CCK0
Type: TLC
Technology: 32-layer
Speed: 533 MT/s .. 1000 MT/s
Capacity: 8 chips @ 1 Tbit
Topology: Charge Trap
Process: 40 nm
Die Size: 69 mm²
(1.9 Gbit/mm²)
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 1
Decks per Die: 1
Word Lines: 39 per NAND String
82.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 50 MB/s
Endurance:
(up to)
7000 P/E Cycles
(20500 in SLC Mode)
Page Size: 16 KB
Block Size: 384 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: LPDDR3-1066
Name: SAMSUNG K4P8G304E0-FGC2
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 90,000 IOPS
Random Write: 98,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 12 GB
(static only)
Speed when Cache Exhausted: approx. 520 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Rev 2: SAMSUNG V3 V-NAND 48-Layers
Rev 3: SAMSUNG V4 V-NAND 64-Layers

NAND Die:

tPROG with overhead: 700 µs (Avg 45.7 MB/s per die)
PS: Although it's a single plane NAND it has a sub plane with 8 KiB pages

Jun 1st, 2024 07:22 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts