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Samsung 850 EVO 4 TB (Samsung V3)

4 TB
Capacity
Samsung MHX
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

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DRAM
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Flash
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SSD Controller
Controller
NAND Die
NAND Die
The Samsung 850 EVO was a solid-state drive in the 2.5" form factor, launched on December 8th, 2014, that is no longer in production. It is only available in the 4 TB capacity listed on this page. With the rest of the system, the Samsung 850 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MHX (S4LP052X01) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer TLC NAND flash on the 850 EVO, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 48 GB, once it is full, writes complete at 520 MB/s. The 850 EVO is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IOPS reach up to 90K for reads and 98K for writes.
At its launch, the SSD was priced at 1430 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 300 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Hardware Versions:
Overprovisioning: 370.7 GB / 10.0 %
Production: End-of-life
Released: Dec 8th, 2014
Price at Launch: 1430 USD
Part Number: MZ-75E4T0
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.07 W (Idle)
3.6 W (Avg)
5.6 W (Max)

Controller

Manufacturer: Samsung
Name: MHX (S4LP052X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 400 MHz
Foundry: Samsung
Process: 28 nm
Flash Channels: 8
Chip Enables: 8

NAND Flash

Manufacturer: Samsung
Name: V-NAND V3
Part Number: K9DUGB8S7M-DCK0
Type: TLC
Technology: 48-layer
Speed: 1000 MT/s
Capacity: 8 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 98 mm²
(2.6 Gbit/mm²)
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 54 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 660 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 53 MB/s
Page Size: 16 KB
Block Size: 576 Pages
Plane Size: 3776 Blocks

DRAM Cache

Type: LPDDR3-1066
Name: SAMSUNG K4EBE304EB-EGCF
Capacity: 4096 MB
(1x 4096 MB)
Organization: 32Gx16

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 90,000 IOPS
Random Write: 98,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.0
SLC Write Cache: approx. 48 GB
(42 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 520 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Clock: 400 MHz ~ 500 MHz

Jun 1st, 2024 08:38 EDT change timezone

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