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XPG SX8200 Pro 2 TB (SK Hynix V6)

2 TB
Capacity
SM2262G
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
Techpowerup
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The XPG SX8200 Pro is a solid-state drive in the M.2 2280 form factor, launched in 2018. It is only available in the 2 TB capacity listed on this page. With the rest of the system, the XPG SX8200 Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262G from Silicon Motion, a DRAM cache chip is available. XPG has installed 128-layer TLC NAND flash on the SX8200 Pro, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 150 GB, once it is full, writes complete at 800 MB/s. The SX8200 Pro is rated for sequential read speeds of up to 3,500 MB/s and 3,000 MB/s write; random IOPS reach up to 360K for reads and 360K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 1280 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Hardware Versions:
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: 2018
Part Number: ASX8200PNP-2TT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262G
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V6
Rebranded: 60078667 (Rebranded by ADATA)
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: Samsung K4A8G165WC-BCTD (C-die)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,000 MB/s
Random Read: 360,000 IOPS
Random Write: 360,000 IOPS
Endurance: 1280 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 150 GB
(dynamic only)
Speed when Cache Exhausted: approx. 800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 07:52 EDT change timezone

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