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XPG SX8200 Pro 2 TB (Samsung V4)

2 TB
Capacity
SM2262G
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The XPG SX8200 Pro is a solid-state drive in the M.2 2280 form factor, launched in 2018. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the XPG SX8200 Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262G from Silicon Motion, a DRAM cache chip is available. XPG has installed 64-layer TLC NAND flash on the SX8200 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 24 GB. The SX8200 Pro is rated for sequential read speeds of up to 3,500 MB/s and 3,000 MB/s write; random IOPS reach up to 360K for reads and 360K for writes.
At its launch, the SSD was priced at 300 USD. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 1280 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: 2018
Price at Launch: 300 USD
Part Number: ASX8200PNP-2TT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.05 W (Idle)
1.9 W (Avg)
4.1 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262G
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SAMSUNG K4A8G165WC-BCTD (C-Die)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,000 MB/s
Random Read: 360,000 IOPS
Random Write: 360,000 IOPS
Endurance: 1280 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 24 GB
(static only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

Jun 1st, 2024 08:40 EDT change timezone

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