Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market segment for entry- to mid-level smartphones. Samsung's new eMCP solutions come in a wide range of densities, utilizing LPDDR2 (low power double-data-rate 2) DRAM made with 30 nanometer (nm) class process technology and NAND flash memory using 20 nm-class technology. "As the need is growing for more advanced software and increased data storage in smartphones and tablets, mobile device makers are expected to introduce embedded memory solutions throughout 2012 that offer higher performance and density," said Myungho Kim, vice president of memory marketing, Device Solutions, Samsung Electronics. "Samsung will further accelerate growth in the mobile device market as it extends the advanced memory segment by providing a more expansive line-up of eMCP solutions in 2012." The new eMCP memory solutions will help entry- to mid-level smartphones deliver enhanced performance and longer battery life, while providing mobile handset developers with a simpler design process. Samsung's embedded MCP solutions are fabricated in packages that consist of a four gigabyte (GB) e-MMC (Embedded MultiMediaCard) based on 20 nm-class NAND flash memory for data storage, and a choice of 256 megabytes (MB), 512 MBs or 768 MBs of 30 nm-class LPDDR2 DRAM for supporting high-performance mobile device systems. (Each is equivalent to 2 Gb, 4 Gb and 6 Gb, respectively.) The 30 nm-class LPDDR2 DRAM chip in the new eMCPs performs a key role in enhancing the performance of entry- to mid-level smartphones with a data transmission speed of 1,066 megabits per second (Mbps), which doubles the performance of the industry's previous mobile DRAM (MDDR). When compared to a 40 nm-class LPDDR2 DRAM, the new 30 nm-class LPDDR2 DRAM increases performance by approximately 30 percent, while consuming 25 percent less power. Also, applying the 30 nm-class process technology improves chip manufacturing productivity by 60 percent over 40 nm-class technology. Samsung began providing high-performance 30 nm-class 4 Gb LPDDR2 DRAM in March of last year. In October, Samsung came up with high-density solutions such as a 2 GB LPDDR2 package that stacks four 4 Gb LPDDR2 DRAM and also first started using 30 nm-class LPDDR2 DRAMs for eMCPs. Focusing on the high-end smartphone market, Samsung's previous eMCPs combined 1 GB of 30 nm-class LPDDR2 DRAM with 32 GBs of eMMC memory using 20 nm-class NAND flash. For more information about Samsung memory solutions, visit www.samsung.com/GreenMemory.