SK Hynix announced that it has introduced DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption. By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V. This product is available in both chip and module types. Chips for on-board use enable thinner devices to implement various densities with 2Gb(gigabit), 4Gb and 8Gb. SO-DIMMs(Small Outline Dual Inline Memory Module) are also provided with densities of 2GB(gigabyte), 4GB and 8GB. The DDR3L-RS is expected to evolve into the best memory solution in the Ultrabook™ and tablet PC markets which highly require mobility and low power figure. The product is especially price competitive than LPDDR3 and significantly reduces standby current than existing DDR3L. As it combines performances of mobile DRAM and PC DRAM, SK Hynix expects to penetrate into the new market including low to mid-end ultabooks and tablets with this intermediary product and lead the mobile market. “With the release of the new DDR3L-RS DRAM, we are now able to provide price competitive and low power products to the customers and these products will open a new area of memory semiconductor as one of the best memory solutions for the low to mid-end market,” said Mr. Ji Bum Kim, Head of Worldwide Marketing & Sales Division of SK Hynix. According to market research firm iSuppli, the portion of the ultrathin shipments in the laptop market is expected to be 11% in 2012 and will eventually be expanded up to 39% in 2014. In 2015, it will jump to the half of the lap top market with 52% share.