Tuesday, October 23rd 2012

Samsung and SK Hynix Ramp Up 20 nm DRAM Node Development

Korean DRAM makers Samsung and SK Hynix have each stepped up efforts to scale up production on the new 20 nanometer silicon fabrication process, to make in the mainstream DRAM manufacturing process in 2013. The two have already begun volume production of DRAM on the 20 nm process in 2012, however, 30 nm remains as the mainstream DRAM production process. By 2H-2012, the 20 nm process could take its place. The two companies will gradually shift their focus from PC DRAM to enterprise and mobile DRAM, as PC DRAM continues to reel with oversupply.

Source: DigiTimes
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3 Comments on Samsung and SK Hynix Ramp Up 20 nm DRAM Node Development

#1
Laurijan
The 30nm samsung green ram have much OC potential.
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