YMTC X3-6070 3D QLC NAND flash chips are claimed by the company to offer endurance comparable to 3D TLC NAND flash chips from its competitors, ITHome reports. The company launched the new NAND flash chip at an event earlier this week. The X3-6070 is based on YMTC's 3rd Generation Xtracking architecture, and is 128-layer, which may not sound very competitive, given that other brands have moved up to 176-layer, or 232-layer; but YMTC says that the 128-layer design-choice is one of the four key ingredients to achieving high endurance for this chip.

The other three ingredients are innovations in the materials making up the NAND flash physical layer, new error-correction algorithms, and optimizations at the level of the SSD controller. The X3-6070 can sustain 4,000 P/E cycles per cell, YMTC claims, which is in league of contemporary 3D TLC NAND flash chips. It is able to do so, at lower costs from the QLC architecture. Besides the X3-6070, YMTC also launched a few first-party reference design SSDs that fully implement the controller-level optimizations needed for the chip to perform and endure as advertised.

Chinese memory maker Yangtze Memory Technology Corp (YMTC) is allegedly preparing its next-generation Xtacking 4.0 3D NAND flash architecture for next-generation memory chips. According to the documentation obtained by Tom's Hardware, YMTC has developed two SKUs based on the upgraded Xtacking 4.0: X4-9060, a 128-layer three-bit-per-cell (TLC) 3D NAND, and the X4-9070, a 232-layer TLC 3D NAND. By using string stacking on both of these SKUs, YMTC plans to make the 3D NAND work by incorporating arrays with 64 and 116 active layers stacked on top of each other. This way, the export regulation rules from the US government are met, and the company can use the tools that are not under the sanction list.

While YMTC has yet to fully disclose the specific advantages of the Xtacking 4.0 technology, the industry anticipates significant enhancements in data transfer speeds and storage density. These improvements are expected to stem from increased plane counts for optimized parallel processing, refined bit/word line configurations to minimize latency, and the development of modified chip variants to boost production yields. When YMTC announced Xtacking 3.0, the company offered 128-layer TLC and 232-layer four-bit-per-cell (QLC) variants and was the first company to achieve 200+ layer count in the 3D NAND space. The Xtacking 3.0 architecture incorporates string stacking and hybrid bonding techniques and uses a mature process node for the chip's CMOS underlayer. We have to wait for the final Xtacking 4.0 details when YMTC's officially launches the SKUs.

TrendForce reports that the US Department of Commerce recently released details regarding its CHIPS and Science Act, which stipulates that beneficiaries of the act will be restricted in their investment activities—for more advanced and mature processes—in China, North Korea, Iran, and Russia for the next ten years. The scope of restrictions in this updated legislation will be far more extensive than the previous export ban, further reducing the willingness of multinational semiconductor companies to invest in China for the next decade.

CHIPS Act will mainly impact TSMC; and as the decoupling of the supply chain continues, VIS and PSMC capture orders rerouted from Chinese foundries
In recent years, the US has banned semiconductor exports and passed the CHIPS Act, all to ensure supply chains decoupling from China. Initially, bans on exports were primarily focused on non-planar transistor architecture (16/14 nm and more advanced processes). However, Japan and the Netherlands have also announced that they intend to join the sanctions, which means key DUV immersion systems, used for producing both sub-16 nm and 40/28 nm mature processes, are likely to be included within the scope of the ban as well. These developments, in conjunction with the CHIPS Act, mean that the expansion of both Chinese foundries and multinational foundries in China will be suppressed to varying degrees—regardless of whether they are advanced or mature processes.

According to the latest TrendForce investigations, moving into the second half of 3Q22, the lack of a peak season has led to a delay in inventory destocking. Transactions in the NAND Flash market have been frosty. Buyers are watching passively and tend not to negotiate pricing. Pressure on factory inventory has reached a breaking point and manufacturers are bottoming out pricing in order to make a deal. This move will lead to a further decline in manufacturer pricing. TrendForce once again revises downward 3Q22 NAND Flash wafer contract prices and the decline of pricing is estimated to balloon to 30-35% from the original estimate of 15-20%.

In the past two years, the pandemic has promoted digital transformation and notebook computers and servers have stimulated rapid growth in NAND Flash consumption. In order to satisfy demand, manufacturers have been expanding aggressively, with their processes accelerating the output of 128-layer+ products. However, the 2H22 NAND Flash market situation has deteriorated sharply with the acute correction in purchase order demand for smartphones and laptops indicative of a market oversupply. Looking forward to 2023, the conservative attitudes of various consumer electronics brands may lead to difficulties in improving market conditions in the next year and stimulate suppliers to step up efforts to seize market share.

According to TrendForce research, material supply improvement and spiking demand for enterprise SSDs from North American hyperscale data center and enterprise clients in 2Q22 coupled with the Kioxia contamination incident in 1Q22 prompted customers to ramp up procurement to avoid future supply shortages. Manufacturers also give priority to meeting the needs of server customers due to the high pricing of enterprise SSD. In the second quarter, overall revenue of the enterprise SSD market increased by 31.3% to US$7.32 billion.

As the market leader, Samsung has grown its enterprise SSD revenue to US$3.26 billion with the recovery of enterprise SSD procurement. Especially in the second quarter, when orders for other consumer products continued to decline, enterprise SSD became the company's outlet for reducing production capacity. At present, Samsung has been continuously investing in the development of next-generation transmission specification products such as the CXL 2.0 product released at the Flash Summit in early August, in order to maintain a leading position in the market.

Today SK hynix and Solidigm jointly introduced their first collaborative product, a new enterprise solid-state drive (eSSD), P5530. This limited release product highlights the emerging partnership between SK hynix and Solidigm, which formed three months ago when SK hynix acquired Intel's NAND and SSD business. The P5530 combines SK hynix's 128-layer 4D NAND flash with Solidigm's SSD controller and firmware supporting a PCIe Gen 4 interface. The product is offered in 1 TB, 2 TB, and 4 TB capacity options. SK hynix and Solidigm worked together to optimize performance with specific data center use cases and targeted deployments in mind.

Since the launch of Solidigm, the companies have partnered to forge a forward-moving strategy and co-develop products while reinforcing common values across the companies. Through the ongoing partnership and collaboration with Solidigm, SK hynix expects to enhance its NAND flash business competitiveness to the same extent as its DRAM business.

"With in-time demonstration of the collaborative product based on the combined competence of SK hynix and Solidigm, we aim to not only enhance our NAND flash business competitiveness but also speed up our "Inside America" strategy," said Kevin (Jongwon) Noh, President and Chief Marketing Officer (CMO) at SK hynix. "SK hynix and Solidigm will continue to partner in order to optimize both companies' operations to create greater synergies."

SK hynix Inc. (or 'the Company', www.skhynix.com) today announced financial results for its third quarter 2021 ended on September 30, 2021. The consolidated revenue of the third quarter 2021 was 11.805 trillion won, while the operating profit amounted to 4.172 trillion won and the net income 3.315 trillion won. Operating margin for the quarter was 35% and net margin was 28%.

SK hynix achieved record high quarterly revenue since its foundation, and regained operating profit more than 4 trillion won after two and a half years since the fourth quarter of 2018. The increased semiconductor memory demand for server and smartphone (mobile) applications, alongside the improved product prices, contributed to the Company's record-breaking quarterly revenue.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2021. Total consolidated revenue was KRW 63.67 trillion, a 20% increase from the previous year and a record for the second quarter. Operating profit increased 34% from the previous quarter to KRW 12.57 trillion as market conditions improved in the memory market, operations normalized at the Austin foundry fab, and as effective global supply chain management (SCM) helped maintain solid profitability for the finished product businesses.

The Semiconductor business saw a significant improvement in earnings as memory shipments exceeded previous guidance and price increases were higher than expected, while the Company strengthened its cost competitiveness. For the Display Panel Business, a one-off gain and an increase in overall prices boosted profits.

Chinese manufacturer Asgard has announced the company's (and the Chinese market's) first PCIe 4.0 SSD. The AN4 pairs 128 Layer 3D TLC NAND manufactured by YMTC (Yangtze Memory Technologies Co., Ltd) Xtacking 2.0 technology, which uses a two-step manufacturing process wherein both NAND cells and interconnects are manufactured in two separate wafers and then optically fused. The NAND memory is then paired with Innogrit's IG5236 Rainier controller. The AN4 is rated for 7,500 MB/s and 5,500 MB/s sequential read and write speeds and features a "high" TBW endurance rating, though Asgard didn't clarify the exact random performance figures, nor the TBW rating for the SSD. Pricing is similarly up in the air - Asgard has only announced market availability for the 1 TB SSD solution come August, with additional 2 TB and 512 GB capacities being readied to market for a later timeframe.

The manufacturing technology of YMTC results in NAND that's as fast as Micron's latest 192-layer NAND tech, and beats well-established Kioxia's 96-layer technology performance-wise. One Bilibili forum user put the drive through its paces, and discovered that to unlock its full potential, one has to have a system capable of 512 bit maximum payload size (MPS), which is currently only supported by AMD motherboards - maximum Intel MPS currently stands at 256 bit, which "only" enables sequential performance of up to 7,150 MB/s. The user put the AN4 through a variety of tests, including PCMark 10's Drive Performance Consistency Test - a 10 to 20 hours workload marathon that puts more than 23 TB of drives on the SSD. It seems that Chinese manufacturers have achieved parity with the top western manufacturers, meaning there is one more option in the global, high-performance NAND market.

SK hynix Inc. today announced financial results for its first quarter 2021 ended on March 31, 2021. The consolidated revenue of the first quarter 2021 was 8.494 trillion won while the operating profit amounted to 1.324 trillion won, and the net income 993 billion won. Operating margin for the quarter was 16% and net margin was 12%.

The Company made better results both QoQ and YoY in the first quarter as the semiconductor market conditions improved earlier this year. Although the first quarter is usually off-season of the semiconductor industry, the Company said that the market conditions improved as demand for memory products for PCs and mobiles increased. In addition, cost competitiveness has increased as yields of major products have improved. Through this, the revenue and the operating profit increased by 7% and 37%, respectively, compared to the previous quarter.

SK hynix Inc. today announced financial results for its third quarter 2020 ended on September 30, 2020. The consolidated revenue of third quarter 2020 was 8.129 trillion won while the operating profit amounted to 1.3 trillion won, and the net income 1.078 trillion won. Operating margin for the quarter was 16% and net margin was 13%.

Despite the Company saw the recovery of mobile DRAM demand in the quarter, both the revenue and operating profit decreased by 6% and 33% quarter-over-quarter (QoQ) respectively, as the server DRAM and SSD demands weakened, and the overall semiconductor memory price flow turned downwards in the quarter. For DRAM, SK hynix proactively responded to rising demands of mobile and graphics DRAM, and the expansion of consumer electronics DRAM demand as well. As a result, in spite of decreased server DRAM demand, the Company's DRAM bit shipment in the quarter still increased by 4% QoQ. However, due to the unfavorable price of server DRAM and other certain DRAM products, the average selling price decreased by 7% QoQ.

SK hynix and Intel today announced that they have signed an agreement on Oct. 20, KST, under which SK hynix would acquire Intel's NAND memory and storage business for US $9 billion. The transaction includes the NAND SSD business, the NAND component and wafer business, and the Dalian NAND memory manufacturing facility in China. Intel will retain its distinct Intel Optane business.

SK hynix and Intel will endeavor to obtain required governmental approvals expected in late 2021. Following receipt of these approvals, SK hynix will acquire from Intel the NAND SSD business (including NAND SSD-associated IP and employees), as well as the Dalian facility, with the first payment of US $7 billion. SK hynix will acquire from Intel the remaining assets, including IP related to the manufacture and design of NAND flash wafers, R&D employees, and the Dalian fab workforce, upon a final closing, expected to occur in March 2025 with the remaining payment of US $2 billion. Per the agreement, Intel will continue to manufacture NAND wafers at the Dalian Memory Manufacturing Facility and retain all IP related to the manufacture and design of NAND flash wafers until the final closing.

SK hynix Inc., a global semiconductor supplier based in Korea, announced today the release of its newest PCIe SSD: the SK hynix Gold P31. The latest edition is the world's first 128-layer NAND flash-based consumer SSD and the company's first consumer-facing PCIe SSD launched in the United States under the SK hynix brand.

The Gold P31 is intended for all PC users with a particular focus on gamers, designers, and content creators. The drive supports the PCIe NVMe interface based on 4D NAND flash technology and is now available for purchase in 1 TB and 500 GB capacities on Amazon U.S. The Gold P31 offers best-in-class read speeds of up to 3,500 MB/s and write speeds of up to 3,200 MB/s. The drive is a reliable choice for gamers whose PCs must support long hours of play, as well as professional creators and designers for whom performance and stability is essential. The Gold P31's reliability has been tested and validated through 1,000 hours of high-temperature operating life tests (HTOL) with mean time between failures (MTBF) reaching 1.5 million hours. The SSD also comes with a five-year warranty.

SK hynix Inc. today announced financial results for its second quarter 2020 ended on June 30, 2020. The consolidated revenue of second quarter 2020 was 8.607 trillion won while the operating profit amounted to 1.947 trillion won, and the net income 1.264 trillion won. Operating margin for the quarter was 23% and net margin was 15%.

Despite uncertainties of business environment due to COVID-19, both the Company's revenue and operating income increased by 20% and 143% quarter-over-quarter (QoQ) respectively, as the surging demand for server memory maintained favorable memory price while numerous factors including the increase of the main products' yield rate led to cost reduction.

SSD controller manufacturer Phison Electronics announced that its entire lineup of controllers are compatible with 64-layer 3D NAND flash memory chips by Yangtze Memory Technology Company (YMTC), the Chinese semiconductor firm specializing in memory devices, which is in the news for rapid product portfolio development in aid of China's plans to reduce dependence on foreign technology.

The company also announced readiness for YMTC's upcoming 128-layer 3D NAND flash memory chips. Phison's controllers feature industry-standard NAND flash interfaces, and supporting YMTC's chips would be as simple as developing an optimized firmware. YMTC leapfrogged from 64- to 128-layer, skipping the 96-layer product cycle. YMTC's 64-layer chips have been in mass-production since September 2019, and 128-layer chips will start shipping out later this year. Phison's first collaboration with YMTC will be for client-segment products, before developing enterprise-grade drives.

China's plans for world domination include the country slowly retracting itself from its dependency on western companies' technologies, via heavy acceleration of plans for and production of a myriad of semiconductor technologies. One of the more important technologies amongst those due to its relative ease of manufacture and overall market value is, of course, NAND technology. And the days of China being undoubtedly behind other manufacturers' technologies seems to be coming to an end, with the countries' Yangtze Memory Technologies (YMTC) 64-layer Xtacking TLC NAND design already achieving pretty impressive results compared to its mainstream counterparts.

Xtacking technology is expected to disrupt the $52 billion NAND memory market and its big players such as Micron, Samsung, SK Hynix, Kioxia, Western Digital, and Intel. The technology separates periphery circuits and memory cell operations towards a separate wafer, which allows for increased performance and throughput compared to other designs. Senior technical fellow Jeongdong Choe at Ottawa, Canada-based TechInsights (a company specializing in reverse-engineering semiconductor technology) has told EE Times YMTC's 64-layer, 256 Gb die bit density is 4.41 Gb/mm, which is higher than the Samsung equivalent 256 Gb die at 3.42 Gb/mm.

SK hynix, in its Q1-2020 financial results commentary, confirmed that the company will commence mass-production of its next-generation 128-layer 3D NAND flash memory within Q2-2020 (before July). This would mark the company's transition from 96-layer 3D NAND flash, which formed the bulk of the company's NAND flash output through 2019. SK hynix is developing 128-layer 3D NAND flash chips in both TLC and QLC offerings. The company also mentioned that in Q2, it could diversify its portfolio of PCIe (NVMe) SSDs covering more markets and form-factors.

SK hynix Inc. today announced financial results for its first quarter 2020 ended on March 31, 2020. The consolidated revenue of first quarter 2020 was 7.20 trillion won while the operating profit amounted to 800 billion won, and the net income 649 billion won. Operating margin for the quarter was 11% and net margin was 9%.

Despite abrupt changes of external business conditions due to COVID-19, our first quarter revenue and operating income increased by 4% and 239% quarter-over-quarter (QoQ) respectively, driven by increased sales of server products, yield rates improvement, and cost reduction. For DRAM, strong demand of server clients offset the weak mobile demand which declined due to both seasonal slowdown and the COVID-19 impact. As a result, the Company's DRAM bit shipments declined only by 4% QoQ and DRAM average selling price increased by 3% QoQ.

Mainland Chinese semiconductor firm Yangtze Memory Technologies Co (YMTC), has reportedly struck a NAND flash memory chip supply deal with popular solid-state storage products brand Lexar, which specializes in SSDs, memory cards, and USB flash drives; and more importantly, enjoys a prominent market presence in the West. Micron Technology had, in 2017, sold the Lexar brand to Longsys, a Chinese electronics conglomerate. YMTC's first products sold to Lexar will be a 512 Gbit 128-layer 3D QLC NAND flash memory chip for Lexar's nCard line of microSDXC cards, which ships in 64 GB, 128 GB, and 256 GB densities, offering transfer speeds of up to 90 MB/s reads, with up to 70 MB/s writes.

Mainland Chinese semiconductor firm Yangtze Memory Technologies Co (YMTC) formally launched a product that could serve as a technological milestone for the company, a 128-layer 3D QLC NAND flash memory chip. Carrying the product naming series "X2-6070," the chip implements YMTC's XTracking 2.0 memory stacking architecture. This is a particularly big development for the company considering the chip's immediate predecessor is a 64-layer chip based on XTracking 1.0, which entered mass-production as recently as in September 2019, a time when most foreign firms such as Samsung, SK Hynix, and Micron, had moved on to 96-layer mass-production, having announced their 128-layer designs around June 2019. YMTC hence appears to have pole-vaulted 96-layer.

"With the launch of Xtacking 2.0, YMTC is now capable of building a new business ecosystem where our partners can play to their strengths and we can achieve mutually beneficial results," said Grace Gong SVP of sales and marketing at YMTC. "This product will first be applied to consumer-grade solid-state drives and will eventually be extended into enterprise-class servers and data centers in order to meet the diverse data storage needs of the 5G and AI era," Gong added. YMTC, part of the state-owned conglomerate Tsinghua Unigroup, is one of the dozens of beneficiaries of the Chinese government's initiative of localizing cutting-edge electronics technology, and reducing reliance on foreign hardware.

SK hynix Inc. today announced financial results for its fiscal year 2019 and fourth quarter ended on December 31, 2019. The consolidated revenue of fiscal year 2019 was KRW 26.99 trillion won while the operating profit amounted to 2.71 trillion won, and the net income 2.02 trillion won. Operating margin for the year was 10% and net margin was 7%.

In order to respond to changing market conditions, SK hynix proactively adjusted both investment and output level last year to maximize business management efficiency. However, amid increasing global economic uncertainty, the increase of inventory burden and conservative purchasing policies on the side of the customers led to a slowdown in demand as well as price falls. As a result, the Company's earnings decreased year-over-year (YoY).

Korean DRAM and NAND flash giant SK Hynix brought its latest memory innovations to the 2020 International CES. The star attraction at their booth was the "4D NAND" technology, and some of the first client-segment SSDs based on it. As a concept, 4D NAND surfaced way back in August 2018, and no, it doesn't involve the 4th dimension. Traditional 3D NAND chips use charge-trap flash (CTF) stacks spatially located next to a peripheral block that's responsible for wiring out all of those CTF stacks. In 4D NAND, the peripheral block is stacked along with the CTF stack itself, conserving real-estate on the 2-D plane (which can then be spent on increasing density). We caught two 128-layer 4D NAND-based client-segment drives inbound for 2020, the Platinum P31 M.2 NVMe, and Gold P31 M.2 NVMe. The already launched Gold S31 SATA drive was also there.

SK hynix Inc. presents its innovative semiconductor technologies leading the 4th Industrial Revolution at CES 2020, the world's largest trade show for IT and consumer electronics in Las Vegas, USA, from January 7-10, 2020. In line with its "Memory Centric World" theme, SK hynix depicts a futuristic city which effectively utilizes enormous amounts of data. The Company also showcases its semiconductor solutions across six crucial business fields - artificial intelligence (AI), augmented reality (AR) / virtual reality (VR), automotive, Internet of Things (IoT), big data and 5G.

Headlining at CES 2020 are SK hynix's memory solutions including HBM2E, DDR5 for servers, and SSD, which are already highly regarded and widely used in 4th industrial fields such as 5G and AI for their stability, speed, power consumption and density excellence. Other cutting-edge products set to make headlines in January are the Company's highly durable LPDDR4X and eMMC 5.1, which are optimized for automobiles. What's more, SK hynix is displaying its LPDDR5 and UFS that enhance the performance of 5G smartphones as well as CIS (CMOS Image Sensor) which is essential in establishing effective environments for AR/VR and IoT.

Micron Technology has taped out its 4th generation 3D NAND flash memory with 128 layers. This paves the way for mass production and product implementations in 2020. The 4th gen 3D NAND by Micron continues to use a CMOS-under-array design, but with Replacement Gate (RG) Technology instead of Floating Gate, which Micron and the erstwhile IMFlash Technology had been using for years. Micron is currently mass-producing 96-layer 3D NAND flash, and TLC remains the prominent data-storage physical layer despite the advent of QLC (4 bits per cell).

Micron comments that this 4th gen 128-layer 3D NAND will be a stopgap restricted to a select few applications, and may not see the kind of adoption as its current 96-layer chips. The company appears to be more focused on its evolution, possibly the 5th generation 3D NAND, which are expected to bring tangible cost-per-bit gains for the company, as it transitions to a newer silicon fabrication node, and implements even newer technologies besides RG. "We achieved our first yielding dies using replacement gate or "RG" for short. This milestone further reduces the risk for our RG transition. As a reminder, our first RG node will be 128 layers and will be used for a select set of products. We don't expect RG to deliver meaningful cost reductions until FY2021 when our second-generation RG node is broadly deployed. Consequently, we are expecting minimal cost reductions in NAND in FY2020. Our RG production deployment approach will optimize the ROI of our NAND capital investments," said Sanjay Mehrotra, CEO and president of Micron.

Yangtze Memory Technologies (YMTC), a Chinese state-backed semiconductor company founded in 2016 as part of the Chinese Government's tech-independence push, has commenced mass-production of 64-layer 3D NAND flash memory chips, at a rate of 100,000 to 150,000 wafers per month leading into 2020. The 64-layer 3D NAND chips are based on YMTC's "in-house" Xtracking architecture. The company is already developing a 128-layer 3D NAND flash chip, and is skipping 96-layer along the way.

YMTC's capacity will be augmented by a new fab being built by its parent company, Tsinghua Unigroup. Tsinghua is a state-owned company which holds a controlling 51 percent stake in YMTC, and is a beneficiary of China's National Semiconductor Industry Investment Fund. When it goes online in 2021-22, the new Tsinghua fab, located in Chengdu, will augment YMTC's capacity by an additional 100,000 12-inch wafers per month. Its existing fab in Nanjing will also receive a capacity expansion.