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Transcend Announces Lineup of Embedded DRAM-less SSDs

As a leading manufacturer of embedded memory products, Transcend provides high-value storage products for industrial applications. The firm recently released DRAM-less 96-layer 3D NAND SSDs in 2.5" and M.2 form factors with NVMe PCIe and SATA III interfaces, catering to increasing demand for smart edge applications. Capable of operating under harsh conditions, this economical storage solution helps companies upgrade their hardware and remain highly competitive even without DRAM, allowing them to quickly deploy edge storage devices in the AIoT era.

Recognizing that industrial applications create a variety of needs, Transcend has released a complete product lineup, including MTE632T, an NVMe PCIe Gen 3x4 SSD, SATA III M.2 2280 SSD MTS932T, SATA III M.2 2242 SSD MTS532T, and 2.5" SSD SSD432K. Capacity options of up to 1 TB can be customized for enterprises seeking to choose the most suitable storage device. All DRAM-less SSDs are built with 96-layer 3D NAND flash that withstands 3K Program/Erase cycles for intensive read-write demands.

ATP Launches PCIe Gen3 x4 NVMe SSDs in M.2 Type 1620 HSBGA Package

ATP Electronics, the global leader in specialized storage and memory solutions, has announced the launch of its tiniest NVMe flash storage offering: the N700 Series PCIe Gen3 x4 NVMe solid state drives (SSDs, which are available as M.2 Type 1620 heatsink ball-grid array (HSBGA) package. Complying with M.2 specifications, the M.2 Type 1620 HSBGA measures just 16 (L) x 20 (W) x 1.6 (H) mm, supporting high-speed PCIe 3.0 interface x4 lanes and NVMe protocol to deliver up to 32 Gb/s bandwidth at 8 Gb/s per lane. The soldered-down design makes them vibration-proof, while the 291-ball packaging takes up minimal space within tightly confined systems.

For customers who prefer a removable and field-replaceable design, ATP can accommodate the HSBGA onto an M.2 2230 module with the same firmware and NAND configuration. Both variants are suitable for thin and light systems in embedded, industrial and mobile applications. N700 Series SSDs are built with 3D triple-level cell (TLC) configured as pseudo single-level cell (pSLC) NAND flash. By storing only one bit per cell, they increase the reliability and endurance of the NAND flash memory, while benefiting from the lower cost compared with native SLC, due to the higher cell density.

Samsung Announces 980 NVMe PCIe 3.0 DRAM-less SSD

Samsung Electronics, the world leader in advanced memory technology, today announced the 980 NVMe SSD, the company's first consumer drive without DRAM. Delivering the highest performance among DRAM-less SSDs, the new 980 makes blazing NVMe speeds more accessible to a wider range of users. Previously, DRAM-less designs have presented a disadvantage in speed without the short-term memory at hand for fast access to data.

Samsung's 980 utilizes Host Memory Buffer (HMB) technology, which links the drive directly to the host processor's DRAM to overcome any performance drawbacks. This technology, coupled with the company's latest sixth-generation V-NAND as well as optimized controller and firmware, enables the 980 to provide NVMe performance with six times the speed of SATA SSDs. Sequential read and write speeds come in at up to 3,500 and 3,000 MB/s, while random read and write performances are rated as high as 500K IOPS and 480K IOPS, respectively.

Goodram Introduces Value Series PX500 NVMe SSDs Available up to 1 TB

It's been a while since we've had a post on a Goodram product at TechPowerUp, with the company's releases mainly falling off the radar. However, the company's new PX500 series of NVMe SSDs are being positioned as value options in the segment, whilst being quoted with some respectable transfer speeds - provided you don't acquire the lowest capacity version. Available in 256 GB, 512 GB and 1 TB capacities, the Goodram PX500 are DRAM-less SSDs driven by Silicon Motion's SMI 2263XT controller.

Quoted numbers for the 256 GB version stand at 1,850 MB/s sequential read, 950 MB/s sequential write, 102,000 IOPS 4K random read and 230,000 IOPS 4K random write. The 512 GB version posts 2,000 MB/s, 1,600 MB/s, 173,000 IOPS and 140,000 IOPS in the same performance metrics, while the 1 TB version maxes out at 2,050 MB/s, 1650 MB/s, 240,000 IOPS and 280,000 IOPS, respectively. The Goodram PX500 series of NVMe SSDs are backed by a three-year warranty, and prices have not yet been announced.

Marvell Announces 88SS1320-series PCIe Gen4 NVMe SSD Controllers

Marvell today released the industry's lowest power PCIe Gen4 NVMe solid-state drive (SSD) controller portfolio. Marvell's newest SSD controllers are designed to meet the need for lower power and higher performance in next-generation data centers and edge devices as artificial intelligence (AI) and 5G gain momentum. This breakthrough technology delivers unparalleled performance in an ultra-compact footprint, leveraging the company's complex system-on-chip (SoC) design expertise and groundbreaking storage IP to help data center, notebook, tablet, gaming and edge computing platform architects advance their solutions for the highly distributed data era.

"Marvell's latest family of storage controllers has been architected to optimally address edge computing and data center pain points of power-performance and capacity-performance," said Nigel Alvares, vice president of marketing for the Flash Business Unit at Marvell Semiconductor, Inc. "With today's launch, we're once again demonstrating Marvell's leadership in storage, delivering the industry's first 4-Channel PCIe Gen4 NVMe SSD controllers with the industry's lowest power consumption that will help revolutionize SSD solutions for the data economy."

Toshiba Announces the TR200 SATA SSDs with 64-layer 3D TLC NAND

Toshiba's first retail SSDs to use the company's 64-layer BiCS3 3D NAND technology have been announced by Toshiba. The successors to the company's Trion 100 and Trion 150 SSDs still carry some vestiges of OCZ branding in the product logo and TR (short for Trion) moniker. This is Toshiba's first generation of mainstream, mass-market-suitable 3D NAND flash.

These drives make use of a DRAM-less controller design, and will be available in capacities ranging from 240 GB up to 960 GB. Toshiba advertises 550 MB/s read and 525 MB/s write speeds. 4K Random Read IOPS stand at 87K, while 4K Random Write IOPS go up to 87K. The endurance on the models will range from 60 to 240 TB according to capacity, and these carry the same three-year warranty as previous Trion SSDs. Pricing has not yet been announced, although the TR200 series will start shipping to retailers this fall.
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