Kioxia showcased its latest BG7 line of client mainstream NVMe SSDs, which will be aimed mostly at PC OEMs and range in capacities from 256 GB to 2 TB. The Kioxia BG7 series is actually the first client SSD solution to use the latest BiCS Gen 8 3D flash memory with CBA (CMOS directly Bonded to Array) technology. Thanks to the new BiCS Gen 7 3D flash, the Kioxia BG7 series SSDs promise random read and write of up to 1,000,000 IOPS and sequential performance of up to 7,000 MB/s, which is up to 10 and 16 percent higher random and sequential performance compared to its BG6 series predecessor. These are PCIe 4.0 Gen 4 x4 NVMe SSDs that will be coming in various M.2 form factors, including 2230, 2242, and M.2 2280, that will probably find their way into many workstations, desktops, laptops, and all-in-one PCs.

In addition to the new BG7 SSD series, Kioxia also showcased its LC9 245.76 TB enterprise SSD, which we have seen at the FMS 2025 show and uses the same BiCS Flash Generation 8 QLC 3D flash memory. It features a 32-die stack of 2 terabit (Tb) 3D flash memory with the same CBA technology, which enables industry-first 8 TB capacity in a small 154 BGA package. The Kioxia LC9 comes in a 2.5-inch and Enterprise and Datacenter Standard Form Factor (EDSFF) E3.L form factor, and since it packs 245.76 TB in such a small package, we could not pass up the opportunity to take a picture of holding almost 1 PB in our hand.

SK hynix presented its cutting-edge DRAM, NAND, and AI memory solutions at FMS: the Future of Memory and Storage 2025 in Santa Clara, California from August 5-7, reinforcing its global memory leadership.

Now in its 19th year, FMS, previously known as the Flash Memory Summit, rebranded in 2024. It adopted the name the Future of Memory and Storage to reflect the transformative influence of the AI era. The event's scope was also expanded from focusing solely on flash memory to covering the full spectrum of memory and storage technologies, including DRAM.

Sandisk today demonstrated a high-capacity 256 TB NVMe enterprise SSD, a breakthrough in storage capacity, performance and power efficiency, made possible by Sandisk's new enterprise-grade UltraQLC platform. Offering extraordinary capacity, the UltraQLC platform marks a significant achievement in NAND architecture, built with a combination of BiCS8 QLC CBA NAND, custom controllers and advanced system optimizations

As workloads and business requirements evolve in the AI era, flash storage must become more customizable to match complex workloads. The new SANDISK 256TB1 NVMe SSD, built on the UltraQLC platform, is designed for AI-driven, data-intensive workloads like data ingest, preparation, and fast AI data lakes with high-performance speeds and power efficiency, while improving TCO for high-capacity applications in hyperscale cloud.

Kioxia group, a world leader in memory solutions, will once again take center stage at FMS: the Future of Memory and StorageA new window will open. to spotlight how its flash memory and SSD innovations are driving scalable, efficient infrastructure for artificial intelligence (AI). With a focus on real-world applications and performance gains, Kioxia will demonstrate how its latest solutions meet the evolving demands of AI across data center and enterprise environments.

Kioxia will spotlight its newest products, including the high-capacity KIOXIA LC9 Series - the industry's first 245.76 terabyte (TB) NVMe SSD. Additional highlights include the KIOXIA CM9 Series and KIOXIA CD9P Series SSDs built with the company's BiCS FLASH generation 8 3D flash memory, delivering performance, power efficiency, and versatility. Kioxia will also display 1 terabit (Tb) 3bit/cell (TLC) products with BiCS FLASH generation 9 and generation 10 3D flash memory technology. BiCS FLASH generation 9 and generation 10 3D flash memory incorporate interface standards, Toggle DD6.0, and leverage the SCA (Separate Command Address) protocol and a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which provide improvements in data input and output speed and power consumption reduction.