I'M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, announces availability of the world's first 8 Gigabit (Gb) DDR3 components with a single chip-select, doubling the amount of memory per chip compared to other DDR3 DRAM devices on the market. Based on these new 8 Gb components, I'M is also introducing the first 16 Gigabyte (GB) DDR3 UDIMM and SO-DIMM memory modules with optional ECC error-correction.

The JEDEC specification JESD79-3 has always allowed an 8 Gb density for DDR3 memory devices. While most DRAM manufactures are waiting for a 2x nm process to fit such high memory capacity into a single DRAM IC package, I'M has developed its own a revolutionary way to manufacture 8 Gb DDR3 components with single chip-select utilizing existing 30 nm manufacturing technologies.

With capacities of up to 4 Gigabit per chip, I'M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, enters the market for industrial DDR2 memory components with their mission statement "Beyond Limits".

DDR2 SDRAM technology is the memory standard that most industrial applications have been designed around for years. I'M pushes this technology even further by offering higher capacities and wider temperature ranges than other manufacturers. The most common densities of DDR2 continue to be 512 Mb and 1 Gb. The larger capacities, such as 2 Gb and 4 Gb, are defined by JEDEC, but their availability from other manufacturers continues to be very limited. I'M Intelligent Memory focuses on the high end of DDR2 capacities with their 2 Gbit monolithic, 2 Gbit Dual-Die (DDP) and 4 Gbit DDP components in standard or industrial temperature ranges. For automotive customers, AEC-Q100 versions are also available.