Samsung and Toshiba to Support New Standardized NAND Specification
Samsung Electronics Co., Ltd. and Toshiba Corporation today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second (Mbps) interface, toggle DDR 2.0 specification. The high-performance NAND memory is expected to be of immediate benefit to a host of NAND-based mobile and consumer electronics applications, especially where there is consumer demand for an extra stretch in performance. Both companies will support a standard industry specification to enable broad-scale acceptance of this new high-speed technology.
"Our introduction of high-speed 30 nanometer class* NAND late last year served as an initial pathway for stimulating acceptance of the new high-performance toggle DDR technology," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, continual upgrades in high-speed performance will create new applications and broader market opportunities for NAND flash memory. The rapid adoption of fourth generation (4G) smartphones, tablet PCs and solid state drives is expected to drive demand for a broader range of high-performance NAND solutions."
"Our introduction of high-speed 30 nanometer class* NAND late last year served as an initial pathway for stimulating acceptance of the new high-performance toggle DDR technology," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, continual upgrades in high-speed performance will create new applications and broader market opportunities for NAND flash memory. The rapid adoption of fourth generation (4G) smartphones, tablet PCs and solid state drives is expected to drive demand for a broader range of high-performance NAND solutions."