Samsung Expands Green Line-up with Industry’s First Volume 40nm-class 4Gigabit DDR3
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry's first low-power (green) four gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The high-density memory is expected to bring significant power savings to data centers, server systems and high-end notebooks.
"When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, in just seven more months, we have introduced an ultra-low power 'Green Memory' - the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte (GB), the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs."
"When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, in just seven more months, we have introduced an ultra-low power 'Green Memory' - the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte (GB), the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs."




























