Tuesday, July 12th 2011
Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Plant
Toshiba Corporation and SanDisk Corporation today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Consumer demand for smartphones, tablets and other electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest, most advanced process node.
Fab 5 incorporates advanced earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions. LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba's goal of 12 percent less CO2 emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.
Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.
Outline of Fab 5 at Yokkaichi Operations
Structure of building: 2-Story steel frame concrete, five floors
Building area: Approximately 38,000m2
Floor area: Approximately 187,000m2
Start of construction: July 2010
Building completion: March 2011
Start of volume production: July 2011
Outline of Toshiba's Yokkaichi Operations
Location: 800 Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: January 1992
General Manager: Koji Sato
Employees: Approximately 4,400
(as of end of March 2011, regular employees only for Toshiba)
Total site area: Approximately 436,800m2
Total floor area: Approximately 647,000m2
Outline of Flash Forward, Ltd.
Location: 800 Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: September 2010
President and CEO: Hideyuki Kobayashi
Holding: Toshiba: 50.1%, SanDisk: 49.9%
SanDisk's operations in Yokkaichi include more than 300 employees under the leadership of SanDisk Japan President and General Manager, Dr. Atsuyoshi Koike.
Consumer demand for smartphones, tablets and other electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest, most advanced process node.
Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.
Outline of Fab 5 at Yokkaichi Operations
Structure of building: 2-Story steel frame concrete, five floors
Building area: Approximately 38,000m2
Floor area: Approximately 187,000m2
Start of construction: July 2010
Building completion: March 2011
Start of volume production: July 2011
Outline of Toshiba's Yokkaichi Operations
Location: 800 Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: January 1992
General Manager: Koji Sato
Employees: Approximately 4,400
(as of end of March 2011, regular employees only for Toshiba)
Total site area: Approximately 436,800m2
Total floor area: Approximately 647,000m2
Outline of Flash Forward, Ltd.
Location: 800 Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: September 2010
President and CEO: Hideyuki Kobayashi
Holding: Toshiba: 50.1%, SanDisk: 49.9%
SanDisk's operations in Yokkaichi include more than 300 employees under the leadership of SanDisk Japan President and General Manager, Dr. Atsuyoshi Koike.
7 Comments on Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Plant
its pretty fast from 40, to 32 then 19
smaller one means more complicated, high tech and it may lead to higher fault ratio
i guess next gen controllers will have features that look like magic to us, to be able to use an SSD for more than a year... durawrite 3 will have to be really efficient:wtf:
Also, how long do you think, you will use an SSD?
The Vertex 3 has only 3000 writes per flash cell, and its Durawrite 2 technology already manages to give it about 10 years lifetime (theoretically)...
lets be realistic, and half that,as that does not include eventual controller failure, and youre still at 5 years.... an amount of time, in which a lot of better and faster stuff is released, that your SSD will be slow Junk, by the end of it.
What i fear, is just, that if you take 1/3rd (1000 writes instead of 3000) of 5 years,with this 19nm flash, you end up with roughly 1.5 years of lifetime, and that hardly is enough, for it to be useable... remembers me of my old indilinx, that roughly had about a year of lifetime, till its inevitable death! :laugh: