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TSMC 16FinFET Plus Process Achieves Risk Production Milestone

TSMC today announced its 16-nanometer FinFET Plus (16FF+) process is now in risk production. This enhanced version of TSMC's 16FF process operates 40% faster than the company's planar 20-nanometer system-on-chip (20SoC) process, or consumes 50% less power at the same speed. It offers customers a new level of performance and power optimization targeted at the next generation of high-end mobile, computing, networking, and consumer applications.

TSMC's 16nm process offers an extended scaling of advanced SoC designs and is verified to reach speeds of 2.3GHz with ARM's "big" Cortex-A57 in high-speed applications while consuming as little as 75mW with the "LITTLE" Cortex-A53 in low-power applications. It is making excellent progress in yield learning, and has achieved the best technology maturity at the same corresponding stage as compared to all TSMC's previous nodes.

Hybrid Memory Cube Consortium Finalizes Specifications

More than 100 developer and adopter members of the Hybrid Memory Cube Consortium (HMCC) today announced they've reached consensus for the global standard that will deliver a much-anticipated, disruptive memory computing solution. Developed in only 17 months, the final specification marks the turning point for designers in a wide range of segments-from networking and high-performance computing, to industrial and beyond-to begin designing Hybrid Memory Cube (HMC) technology into future products.

A major breakthrough with HMC is the long-awaited utilization of advanced technologies to combine highperformance logic with state-of-the-art DRAM. With this first HMC milestone reached so quickly, consortium members have elected to extend their collaborative effort to achieve agreement on the next generation of HMC interface standards.

Xilinx 7 Series FPGA/Micron RLDRAM 3 Platform Enables Substantially Higher Data Rates

Xilinx, Inc. and Micron Technology, Inc., today announced the first public hardware demonstration of an FPGA interfacing with RLDRAM 3 memory, a new and emerging memory standard for high-end networking applications such as packet buffering and inspection, linked lists, and lookup tables. Operating with Virtex-7 and Kintex-7 FPGAs at data rates up to 1600 megabits per second (Mb/s), Micron's high-performance RLDRAM 3 memory combines high density, high bandwidth and fast SRAM-like random access to enable a 60 percent higher data rate and memory bandwidth compared to that of the previous generation (Virtex-6 FPGAs/RLDRAM2 memory standard). RLDRAM 3 memory enables 40G and 100G networking systems that require higher speed, higher density, lower power and lower latency.

Virtex-7 and Kintex-7 FPGAs are designed with the necessary IO standards and architectural components for optimal interfacing with RLDRAM 3, providing a significant boost to system performance for high-performance wireless and wired networking systems. RLDRAM 3 memory uses innovative circuit design to minimize the time between the beginning of an access cycle and the instant that the first data is available. Ultra-low bus turnaround time enables higher sustainable bandwidth with near-term balanced read-to-write ratios.
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