Tuesday, April 4th 2006
Samsung Begins Mass Production of 70nm NAND Flash
Samsung Electronics Co., Ltd, has announced that it has started mass producing 1GB NAND flash memory chips using a 70nm fabrication process. The NAND memory is designed for wide range of products including digital TVs, digital cameras and mobile hard drives which are slowly switching from NOR Flash memory to NAND. According to the manufacturer, the 70 nm Flash offers sustained read speeds of 108 MB/s, as compared to 68 MB/s of the 90 nm generation introduced in April 2004. Write speeds stay at 9.3 MB/s. The other two NAND players: Intel and Micron are to officially present their NAND flash, soon.
Source:
TGDaily
1 Comment on Samsung Begins Mass Production of 70nm NAND Flash
just one thing, dosnt flash memory fail after around 1000-1500 write/erase cycles ?
whats the point then ? any swap file or broswer cache will damage the hard drive in no time.