Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments of 1 Tb (terabit) Triple-Level Cell (TLC) memory devices incorporating its 9th-generation BiCS FLASH 3D flash memory technology1. The devices are designed to support applications such as AI-enabled PCs and smartphones with low- to mid-level storage capacities that require high performance.

Kioxia continues to pursue a dual-axis strategy based on its innovative CMOS directly Bonded to Array (CBA) technology and On-Pitch Select Gate Drain (OPS) technology. Under its unique dual-axis strategy, Kioxia is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.The new 9th-generation BiCS FLASH 1 Tb TLC devices, developed using a 230-layer stacking process based on 8th-generation BiCS FLASH technology and advanced CMOS technology, deliver a NAND interface speed of 4.8 Gb/s, a 33% improvement over 8th-generation devices, matching the performance of 10th-generation devices.

Guided by its mission of "uplifting the world with 'memory,'" Kioxia remains committed to driving technological innovation, strengthening global partnerships, and delivering the advanced storage solutions that power modern AI infrastructure.