News Posts matching "NAND"

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Nimbus Data Launches Their 100TB ExaDrive DC100 SSD

Nimbus Data, a pioneer in flash memory solutions, today announced the ExaDrive DC100, the largest capacity (100 terabytes) solid state drive (SSD) ever produced. Featuring more than 3x the capacity of the closest competitor, the ExaDrive DC100 also draws 85% less power per terabyte (TB). These innovations reduce total cost of ownership per terabyte by 42% compared to competing enterprise SSDs, helping accelerate flash memory adoption in both cloud infrastructure and edge computing.

"As flash memory prices decline, capacity, energy efficiency, and density will become the critical drivers of cost reduction and competitive advantage," stated Thomas Isakovich, CEO and founder of Nimbus Data. "The ExaDrive DC100 meets these challenges for both data center and edge applications, offering unmatched capacity in an ultra-low power design."

Power Outage at Samsung NAND Flash Plant Cuts March Global Output by 3.5%

A power-outage on 9th March, at one of Samsung's NAND flash manufacturing plants located in Pyeongtaek, Korea, will have a notable impact on global NAND flash production. It reduced the global NAND flash output for the month of March 2018 by 3.5 percent, a number that isn't insignificant, and translates into non-volatile memory for millions of devices. It also trims Samsung's output by 11 percent for the month. SIlicon fabrication is a highly sensitive process, and the power-outage is said to have damaged up to 60,000 wafers of NAND flash chips.

The impact of this event on global prices of NAND flash memory, and devices based on it, remains to be seen. Any inflation could be nipped in the bud by Samsung and other NAND flash makers significantly increasing production through this quarter. Samsung will begin expansion of its NAND flash plant in Xi'an, China, which currently outputs 120,000 wafers per month, and is expected to put out 320,000 wafers a month after the expansion.

Western Digital Announces the PC SN720 and PC SN520 NVMe SSDs

Addressing the needs of a growing landscape of Internet of Things (IoT) and Fast Data applications at the edge, Western Digital Corporation today announced two new NVMe SSDs - Western Digital PC SN720 and Western Digital PC SN520 - powered by a new NVMe storage architecture, scalable for a range of emerging implementations, from IoT and edge computing to mobile computing systems.

The new Western Digital NVMe client architecture and product portfolio will enable manufacturers of IoT devices, computing devices such as thin and light, 2-in-1 and embedded PCs and monitoring systems to enable the capture and transformation of the massive quantities of data in real-time at the edge of smart city, smart home and personal data environments. Cisco GCI estimates that nearly 850 zettabytes (ZB) will be generated by all people, machines and things by 2021. With the advent of high-bandwidth technologies like 5G, augmented reality and facial recognition, new applications can benefit from the exceptional performance, power efficiency and capacity of NVMe and Western Digital 3D NAND to deliver an optimal user experience.

Intel Reimagines Data Center Storage with New 3D NAND SSDs

Today, Intel announced the Intel SSD DC P4510 Series for data center applications. The P4510 Series uses 64-layer TLC Intel 3D NAND to enable end users to do more per server, support broader workloads and deliver space-efficient capacity. The P4510 Series enables up to four times more terabytes per server and delivers up to 10 times better random read latency at 99.99 percent quality of service than previous generations. The drive can also deliver up to double the input-output operations per second (IOPS) per terabyte. The 1 and 2TB capacities have been shipping to cloud service providers (CSPs) in high volume since August 2017, and the 4 and 8TB capacities are now available to CSPs and channel customers. All capacities are in the 2.5-inch 15 mm U.2 form factor and utilize a PCIe NVMe 3.0 x4 connection.

To accelerate performance and simplify management of the P4510 Series PCIe SSDs and other PCIe SSDs, Intel is also delivering two new technologies that work together to replace legacy storage hardware. Intel Xeon Scalable processors include Intel Volume Management Device (VMD), enabling robust management such as surprise insertion/removal and LED management of PCIe SSDs directly connected to the CPU. Building on this functionality, Intel Virtual RAID on CPU (VROC) uses Intel VMD to provide RAID to PCIe SSDs. By replacing RAID cards with Intel VROC, customers are able to enjoy up to twice the IOPs performance and up to a 70 percent cost savings with PCIe SSDs directly attached to the CPU, improving customer's return on their investments in SSD-based storage.

Micron To Release QLC NAND-Based Drives in 2018 to the Server Environment

Micron has announced that they will be introducing QLC (Quad Level Cell) NAND-based, own brand drives for the server environment this year. The new QLC drives are expected to boost maximum storage density (and price per GB) closer to that of mechanical HDDs, which is why Micron is positioning drives based on this memory technology as data center-class SSDs for the nearline storage market. The company is positioning these drives as replacement options for 7,200 RPM HDDs for workloads that require heavy reads of stored information - thus offsetting QLC NAND's lower endurance when it comes to available maximum writes on the drives' cells.

It's a known trade-off when it comes to the NAND world: higher amounts of bits per cell to represent information means that there must be much increased accuracy when it comes to reading a given cell's voltage state. While SLC NAND only tracks two voltage states, MLC (2-bits per cell) tracks four voltage states, TLC doubles that to eight voltage states, and QLC doubles the ante again for a maximum 16 voltage states, where each voltage state represents data on the cell. Of course, with repeat writes and voltage changes, accuracy and capacity for the cell to maintain its given voltage tend to drop, which leads to incorrect information and thus corrupted data or those cells to be rendered inoperative. This is one of the reasons for manufacturers to include overprovisioning in their NAND-based solutions.

Silicon Power Announces Its First PCIe Solid State Drives

Silicon Power (SP), a leader in performance memory solutions, today released the P32A80 and P32A85 PCIe Solid State Drives, a pair of leading high-performance and long-lasting devices in an already robust pool of SSDs.

For the New Creators Starting Out
The highly functional P32A80 and P32A85 are the ideal SSD solutions for high-end systems that are ready for a new level of performance and responsiveness. SP launches its first ever PCIe SSD, with designers in mind looking for large image rendering and intensive graphic editing capabilities, enterprises demanding high speed file transfer, fast boot-ups, and launches, and also musicians needing high volume recording and music library loading performance.

Samsung Begins Mass Production of 256GB eUFS for Automotive Applications

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of a 256-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution with advanced features based on automotive specifications from the JEDEC UFS 3.0 standard, for the first time in the industry. Following the memory breakthrough of the automotive industry's first 128GB eUFS in September, 2017, Samsung's 256GB eUFS is now being shipped to automotive manufacturers preparing the market for Advanced Driver Assistance Systems (ADAS), next-generation infotainment systems and new-age dashboards in luxury vehicles.

As thermal management is crucial for automotive memory applications, Samsung's 256GB eUFS extends the temperature range to between -40°C and 105°C for both operational and power-saving modes. Warranties for conventional embedded multimedia card (eMMC) 5.1 solutions generally cover -25°C to 85°C for vehicles in operation and -40°C to 85°C when in idle or power-saving mode.

SK Hynix Ramps Up Enterprise SSDs with Its 72-Layer 512Gb 3D NAND Flash

SK Hynix Inc. today announced that the Company recently completed developing an enterprise SATA Solid State Drive (or 'eSSD'). With its 72-Layer 512Gb (Gigabits) 3D NAND Flash chips, the Company is paving the way for its full-fledged entrance to the high value-added eSSD market. SK Hynix combined the 72-Layer 512Gb 3D NAND Flash with its in-house firmware and controller to provide the maximum density of 4TB (Terabytes). SK Hynix makes the most of its 72-Layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips.

A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB (Gigabytes). The new eSSD supports sequential read and write speed of up to 560MB/s (Megabytes per second) and 515MB/s, respectively, and it can perform 98,000 random read IOPS (Input/Output operations per second) and 32,000 random write IOPS. SK Hynix also improved the read latency, which is of the utmost importance in eSSD performance. The Company is sampling the product to server and data center clients in the United States.

NDRC, Samsung to Sign MOU That Could Moderate DRAM Prices, Increase Production

PC hardware enthusiasts all over (but particularly in our own forums) have been adamant in how this is one of the worst times to be building a new system. And it's true; the DIY market is a mess right now, as our own btarunr mentioned in his latest editorial; so much so, that in a full reversal of years and years of experience, users might now actually be better served in the $/performance department by buying their systems from boutique retailers, than by acquiring all of the parts separately. It's a mad, mad world out there, for a multitude of reasons; but one such reason is DRAM pricing. And fortunately, it seems that China's National Development and Reform Commission (NDRC) is on the verge of signing a Memorandum Of Understanding (MOU) with Samsung that might help the DRAM market as a whole.

JEDEC Publishes Universal Flash Storage (UFS & UFSHCI) v3.0 and UFS Card v1.1

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.0, JESD220D. In addition, new updates to related standards, JESD223D UFSHCI and JESD220-2A UFS Card Extension, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.0 is the first standard to introduce MIPI M-PHY HS-Gear4, with a data rate of up to 11.6 Gbps per lane, a 2x performance increase over prior versions of the specification. UFS 3.0 includes two features introduced specifically for the automotive market: the ability to function at an extended temperature range and refresh operation. JESD220D, JESD223D and JESD220-2A are available for download from the JEDEC website.

UFS is a high-performance interface designed for use in applications where power consumption needs to be minimized, including mobile systems such as smart phones and tablets as well as automotive applications. Its high-speed serial interface and optimized protocol enable significant improvements in throughput and system performance.

To achieve the highest performance and most power efficient data transport, JEDEC UFS leverages industry leading specifications from the MIPI Alliance to form its Interconnect Layer. This collaboration continues with UFS version 3.0, which references the MIPI M-PHY v4.1 physical layer specification and the recently released MIPI UniProSM v1.8 transport layer specification.

Samsung Launches 800GB Z-SSD for HPC and AI Systems

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched an 800-gigabyte (GB) solid state storage drive-the SZ985 Z-SSD, for the most advanced enterprise applications including supercomputing for AI analysis. Developed in 2017, the new 800 GB Z-SSD provides the most efficient storage solution for high-speed cache data and log data processing, as well as other enterprise storage applications that are being designed to meet rapidly growing demand within the AI, big data and IoT markets.

"With our leading-edge 800 GB Z-SSD, we expect to contribute significantly to market introductions of next-generation supercomputing systems in the near future, enabling improved IT investment efficiency and exceptional performance," said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. "We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD market."

Intel Releases Its SSD 760p to the Wild With Competitive Pricing, Performance

Intel today released their mainstream answer to users' fast, NVMe-based storage needs, the SSD 760p. We've already covered this new consumer, mainstream SSD series in our news pieces; however, information and press decks have now come directly from Intel, allowing us a clearer picture of how Intel sees its products to fit into the consumer market - and hopefully, in consumer's choices.

Transcend Announces New Line of 3D TLC NAND SSDs for Embedded Applications

Transcend Information, Inc., a leading manufacturer of industrial-grade products, is proud to announce the release of 2.5-inch and M.2 form factor industrial solid-state drives featuring 3D TLC NAND flash memory. 3D TLC NAND flash memory has performance that can rival Planar (2D) MLC NAND flash, but at a very competitive price point. The new line of industrial SSDs also boast SLC caching, a RAID engine, low-density parity check (LDPC), and other features that make for a stable, long-lasting product ready for write-intensive industrial and embedded applications.

Built with high-quality 3D TLC NAND flash memory
This all-new series of SSDs uses high-quality 3D TLC NAND flash memory. 3D NAND flash breaks through physical limitations on Planar NAND by stacking layers of memory cells to allow for greater capacities and performance. Compared to Planar NAND, 3D NAND is faster, more reliable, and delivers greater performance. Devices manufactured with 3D NAND are price competitive, making them an excellent choice for embedded systems.

Micron Launches 5200 Series Enterprise SATA SSDs Utilizing 64-Layer 3D TLC NAND

Micron Technology, Inc. today launched the Micron 5200 series of SATA solid state drives (SSDs), maintaining industry-leading performance, consistency, capacity, reliability, and overall infrastructure value. Built on Micron's new industry-leading 64-layer 3D NAND technology, the Micron 5200 series of SSDs offers a cost-optimized SATA platform for business-critical virtualized workloads that cripple on a hard drive, such as OLTP, BI/DSS, VDI, block/object and media streaming.

Leveraging the proven architecture, performance and capacity of the well-regarded 5100 SATA SSDs, the Micron 5200 series is engineered to deliver a fast, easy and cost-effective enterprise storage solution to replace existing hard drives and legacy SSDs. Micron 5200 SSDs immediately deliver better total cost of ownership and improve data center efficiency through server and storage platform consolidation, reducing IT costs and simplifying infrastructure and maintenance. Now it is easier than ever before for enterprises to add more flash into the data center and get more out of server deployments.

Samsung Officially Launches SSD 860 PRO and 860 EVO Series

Samsung Electronics America, Inc. today introduced the 860 PRO and 860 EVO solid state drives (SSDs), the most up-to-date additions to the company's SATA interface lineup. The products are aimed at consumers who require fast, reliable performance across various applications, from everyday computing to heavy workloads and graphic-intensive operations. Building on the successful launch of the 850 PRO and 850 EVO - the industry's first consumer SSDs with V-NAND technology - the 860 PRO and 860 EVO achieve industry-leading performance for SATA SSDs, offering enhancements in speed, reliability, compatibility and capacity.

"The new 860 PRO and 860 EVO SSDs combine the latest 512Gb and 256Gb 64-layer V-NAND, up to 4GB LPDDR4 mobile DRAM and a new MJX controller to elevate the user experience for both consumers and businesses," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung will continue to fuel meaningful innovations in the consumer SSD space and drive growth of the overall memory industry for years to come."

Samsung 860 EVO SSD Makes an Appearance

Hot on the heels of Samsung updating its website with its next performance-segment SSD 860 Pro series, with its range-topping 4 TB variant, a similar pre-launch website update revealed the company's next mainstream SATA SSD, the 860 EVO. The drive will be available in three form-factors, 7 mm-thick 2.5-inch, M.2-2280, and mSATA; all with SATA 6 Gbps interface. The 2.5-inch version comes in 250 GB, 500 GB, 1 TB, 2 TB, and 4 TB variants; while the M.2-2280 version comes in just 500 GB, 1 TB, and 2 TB variants; and the mSATA version in 250 GB, 500 GB, and 1 TB variants. The drives combine Samsung's latest generation 3D VNAND flash memory built in the 10 nm-class sliicon fabrication process, with an updated controller and refined firmware.

The 860 EVO offers sequential transfer rates of up to 550 MB/s, with up to 520 MB/s sequential writes, up to 97,000 IOPS 4K random reads, and up to 88,000 IOPS 4K random writes. The new-generation flash is rated for "8 times higher" endurance than the 850 EVO series; with up to 2,400 TBW. Samsung is reinforcing its faith in the drive by backing it with 5-year warranties. The company is introducing the new TurboWrite feature, which is a user-configurable SLC cache. You can set anywhere between 12 GB to 72 GB of the NAND flash to function as SLC, so the controller can juggle hot data in and out of it, for improved performance, using the Samsung Magician software.

Marvell's Ready to launch QLC Controller Delivers 670K IOPS

QLC is the next big step in flash memory, with another bump in density increases and, crucially for consumers, revised, lower pricing for flash-based products that employ the new technology. We've already had a sneak peek at what QLC-based products can deliver - Intel's leaked SSD 660P employs QLC memory and is expected to deliver 1,800 MB/s in sequential read and up to 1,200 MB/s in sequential write speeds with 150,000 IOPS. Expect base drive capacities to increase - QLC being higher density would mean fewer NAND chips, but manufacturers want to keep the added performance of chip parallelism.

However, flash needs controllers to deliver its true potential, and Marvell has one up its sleeve. The new controller will eventually replace the NVMe 1.1 Eldora (88SS1093) used in some popular SSDs that are already shipping, such as Plextor's M9Pe, and the folks at Tom's hardware took a peek at it - running the current TLC memory, that is. The controller delivered over 670,000 IOPS and 3,500 MB/s in the demo, though there's no information on the density of the drive. But for those performance levels, it must've had a good amount of silicon. While not representative of final QLC memory performance of the controller, it's good to know that at least this part of the ecosystem is good to go. Now if only QLC was quick and hot off the presses, we could see a $100 512 GB SSD.

Intel SSD 760p and 660p Specifications and Pricing Listed Online

Autobuy, a popular online shopping site in Taiwan, recently listed Intel's upcoming 760p and 660p M.2 NVMe SSDs on their store. The SSD 760p will be manufactured under Intel's 64-layer 3D NAND technology and feature TLC (triple-level-cell) NAND. It's obviously the faster of the two with a sequential read speed up to 3,200 MB/s and a write speed up to 1,600 MB/s. The drive offers random access reads up to 350,000 IOPS and writes up to 280,000 IOPS. Intel will offer this model in capacities of 128 GB, 256 GB, 512 GB, 1 TB, and 2 TB. TigerDirect listed the pricing for them at $96, $120, $240, $448, and $893, respectively.

The SSD 660p is Intel's budget-friendly this time around. Therefore, it will use QLC (quad-level-cell) NAND despite being manufactured with the same technology as its older brother. This SSD can reach up to 1,800 MB/s in sequential read and up to 1,200 MB/s in sequential write speeds with random access read and write performance in the range of 150,000 IOPS. Surprisingly, Intel won't be offering this model in the 128 GB and 256 GB capacities. Instead, the lowest capacity model will start from 512 GB and make its way up to 2 TB. Unfortunately, pricing wasn't available at the time of this article.

The Balloon Falls: Memory Chip Price Decrease in Q4 2017 Prompts Investor Fear

Reuters reports that a sudden (if ridiculous) 5% drop in memory chip prices in Q4 2017 has brought revenue expectations and investors' profit measurements to a teetering halt. 5% may not look like much - it certainly isn't much when we look at the historic price increases that almost doubled the cost of DDR4 memory kits, as you can see in the PC Part Picker chart below. This memory module price chart doesn't include the 5% drop yet, probably because it takes time for memory chip pricing to materialize in end-user module pricing. But for investors, it's like a spark in a paper archive - it could signal an impending price decrease that would push all profit estimates out the window.

This 5% drop in pricing has prompted industry analysts to review their profit estimates for 2018, and expect that the memory industry's growth rate will fall by more than half this year to 30 percent. You read that right - investors are scared because growth rates will be 30 percent instead of 60 percent. Oh the joys of inflated pricing, and slower-than-usual ramp-up to keep demand higher than supply. The joys of economic capitalism, where prices for consumers go up, and an industries' value skyrockets by more than 70$ in a single year (2017).

EDGE Memory Announces Launch of CLX600 Line at CES 2018

EDGE Memory, a leading U.S.-based supplier of memory and storage upgrades, is announcing their CLX600 line of SSDs with M.2 2280, MO-300/mSATA, and 1.8" SATA 6Gb/s models.

Featuring a combination of performance, reliability, and low power consumption, CLX600 SSDs are the ideal choice for system integrators. The M.2 and mSATA models provide impressive throughput, with up to 500MB/s transfer rate and transactional performance that reaches up to 59,000 IOPS. The CLX600 1.8" SSD can achieve transfer speeds of up to 560MB/s and up to 76,000 IOPS. CLX600 SSDs provide ultra-efficient block management to protect data and enhance endurance. These drives deliver leading edge performance and reliability for the most demanding power users, while low power modes extend battery life for road warriors.

Crucial Launches the MX500 Solid State Drive

Crucial, a leading global brand of memory and storage upgrades, today announced the availability of the Crucial MX500 SSD. The new drive features second generation Micron 3D NAND technology and is 45 times more energy efficient than a typical hard drive. Available in capacities up to 2TB in the 2.5-inch form factor and up to 1TB in the M.2 form factor, the MX500 has sequential reads/writes up to 560/510 MB/s and random reads/writes up to 95K/90K IOPS.

"This next generation MX500 SSD features a stackable 64-layer, 256-gigabit component. Micron's floating gate NAND is designed with CMOS Under the Array (CUA), which allows us to minimize the footprint of the die. At 59 square millimeters, it's among the world's smallest 256-gigabit die," said Jon Tanguy, Crucial Senior SSD Product Engineer. "Our engineering team has incorporated this leading-edge NAND technology in an SSD that includes all the advanced features Crucial customers have come to expect to keep their data safe."

Micron and Intel Announce Update to NAND Memory Joint Development Program

Micron and Intel today announced an update to their successful NAND memory joint development partnership that has helped the companies develop and deliver industry-leading NAND technologies to market. The announcement involves the companies' mutual agreement to work independently on future generations of 3D NAND. The companies have agreed to complete development of their third-generation of 3D NAND technology, which will be delivered toward the end of this year and extending into early 2019. Beyond that technology node, both companies will develop 3D NAND independently in order to better optimize the technology and products for their individual business needs.

Micron and Intel expect no change in the cadence of their respective 3D NAND technology development of future nodes. The two companies are currently ramping products based on their second-generation of 3D NAND (64 layer) technology. Both companies will also continue to jointly develop and manufacture 3D XPoint at the Intel-Micron Flash Technologies (IMFT) joint venture fab in Lehi, Utah, which is now entirely focused on 3D XPoint memory production.

Plextor Debuts Their Latest M9Pe Gaming PCIe SSDs

PLEXTOR, a leading manufacturer of award-winning solid-state drives (SSDs) and other high-performance digital storage devices for consumers, today announced the launch of its newest NVMe PCIe SSD the M9Pe Series. The new M9Pe SSD Series has adopted advanced 64-layer 3D NAND and flagship controller along with exclusive PlexNitro, smart cache technology, delivering unprecedented sequential read/write up to 3,200/2,100 MB/s and random read/write up to 400,000/300,000 IOPS. The M9Pe puts improved performance and durability in its crosshairs.

Aimed at high-level PC gaming such as eSports, the M9Pe boasts of its superior components to deliver less lags and 20% faster boot up times compared to a typical SATA drive. The new M9Pe (HHHL/AIC version only) also sports a new eye-catching design with its programmable 3-mode RGB LED lights for the perfect visual appeal on any desktop gaming setup. Similar to its predecessors, the new M9Pe features a high-performing thermal heatsink (M9PeY and M9PeG only) to help regulate SSD temperatures during prolonged gaming sessions resulting to stabilized performance.

China Regulator to Look Into Possible DRAM, NAND Price Fixing by Manufacturers

It's been a couple years now that we've seen continuously increasing pricing of DRAM and NAND semiconductors. The price increase, which has been hailed and documented over, over, and over again (and there are way more articles on this subject here on TPU), follows reported increased demand which has failed to be accompanied by its respective manufacturing and supply ability.

However, reports that companies were planning on increasing production of DRAM and NAND below the expected increases in supply demand may have turned at least some regulatory eyes towards the issue. China's National Development and Reform Commission's Pricing Supervision Department (NDRC) said they are aware of the situation, how it could point towards price-fixing from the four major NAND production players (Samsung, Hynix, Micron and Toshiba), and are looking into the matter. "We have noticed the price surge and will pay more attention to future problems that may be caused by 'price fixing' in the sector," the official Xu Xinyu was quoted as saying in an interview to Chinese newspaper Daily China.

Toshiba Unveils Embedded NAND Flash Memory Products for Automotive Applications

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications. The line-up meets a broad range of applications requirements with five different capacities: 16 GB, 32 GB, 64 GB, 128 GB and 256 GB.

The new products are embedded NAND flash memory products that integrate NAND chips fabricated with 15 nm process technology and a controller in a single package. Storage requirements for automotive applications continue to increase as systems including automotive information & entertainment systems and ADAS become more sophisticated, and UFS supports their high performance and density needs. The addition of automotive UFS expands Toshiba Memory Corporation's line-up of embedded NAND flash memory products for automotive applications, which currently includes automotive e-MMC products. Utilizing the UFS interface allows the new products to achieve sequential read of 850 MB/s and random read of 50,000 IOPS, which are approximately 2.7 times and 7.1 times faster than their current e-MMC counterparts, respectively.
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