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ADATA Launches the IM2S3338 and IM2S3334 Industrial-Grade M.2 SSDs

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched the industrial-grade IM2S3338 M.2 2280 and IM2S3334 M.2 2242 SATA 6Gbps solid state drives. Both utilize the compact M.2 form factor for an easy fit in various installations and transfer data at up to 560MB/s read and 525MB/s write. They use durable and long-lasting 3D NAND, MLC/TLC for the IM2S3334 and TLC on the IM2S3338. The two drives are carefully tested for survivability in extreme temperatures and humidity as well as resistance to shocks and vibration. ADATA integrates LDPC error correction to promote data integrity plus DRAM and SLC caching to help sustain peak performance on both model ranges.

ADATA continues to place an emphasis on serving industrial and commercial applications such as manufacturing, surveillance, retail, transportation, and medical care. The IM2S3338 and IM2S3334 provide additional options, this time in the M.2 form factor. The IM2S3338 uses 3D TLC in capacities from 128GB to 1TB. It delivers 560MB/s read and 520MB/s write. The IM2S3334 carries highly durable 3D MLC NAND in 120GB to 512GB, and 3D TLC in 128GB to 512GB, and runs at up to 560 MB/s read and 525 MB/s write. Users therefore get a comprehensive range of models to choose from based on required capacity and planned budget.

Samsung Introduces Far-reaching V-NAND Memory Solutions

Samsung Electronics, the world leader in advanced memory technology, has announced new V-NAND (Vertical NAND) memory solutions and technology that will address the pressing requirements of next-generation data processing and storage systems. With the rapid increase of data-intensive applications across many industries using artificial intelligence and Internet of Things (IoT) technologies, the role of flash memory has become extremely critical in accelerating the speed at which information can be extracted for real-time analysis.

At the inaugural Samsung Tech Day and this year's Flash Memory Summit, Samsung is showcasing solutions to address next-generation data processing challenges centered around the company's latest V-NAND technology and an array of solid state drives (SSDs). These solutions will be at the forefront of enabling today's most data-intensive tasks such as high-performance computing, machine learning, real-time analytics and parallel computing.

Western Digital, SanDisk Shipping 3D NAND Blue and Ultra SSDs

Western Digital and SanDisk have updated their Blue and Ultra line of consumer SSDs with the latest 3D BiCS FLASH NAND technology. Capacities will range from 250 GB capacities through 500 GB and up to 1TB at launch, with a 2 TB SanDisk Ultra 3D SSD "coming soon." The hardware powering each drive is exactly the same, save for the difference in available storage: the controller used is a Marvell 88SS1074, protocol is SATA 6Gbps / AHCI, and even warranty stays the same through all WD and SanDisk models, at three-years (limited.)

The WD Blue line of SSDs will be available in both 2.5" and M.2 2280 single-sided models. Sequential read speed starts at 550 MB/s for both WD Blue 250 GB and SanDisk Ultra 3D, with sequential write speeds at a rated 525 MB/s and read/write IOPS being set at 95,000/81,000 respectively. All other (higher) capacities deliver slightly more performance: 560 MB/s sequential read speeds, 530 MB/s sequential writes, 95,000 random read IOPS, and 84,000 random write IOPS. Pricing is as follows: WD Blue 3D 250 GB ($89); Blue 3D 500 GB ($149.99), Blue 3D 1 TB ($279.99); SanDisk Ultra 3D 250 GB ($99.99), Ultra 3D 500 GB ($164.99), Ultra 3D 1TB ($279.99) and Ultra 3D 2TB ($549.99, currently unavailable.)

Source: Tom's Hardware

Toshiba Announces the TR200 SATA SSDs with 64-layer 3D TLC NAND

Toshiba's first retail SSDs to use the company's 64-layer BiCS3 3D NAND technology have been announced by Toshiba. The successors to the company's Trion 100 and Trion 150 SSDs still carry some vestiges of OCZ branding in the product logo and TR (short for Trion) moniker. This is Toshiba's first generation of mainstream, mass-market-suitable 3D NAND flash.

These drives make use of a DRAM-less controller design, and will be available in capacities ranging from 240 GB up to 960 GB. Toshiba advertises 550 MB/s read and 525 MB/s write speeds. 4K Random Read IOPS stand at 87K, while 4K Random Write IOPS go up to 87K. The endurance on the models will range from 60 to 240 TB according to capacity, and these carry the same three-year warranty as previous Trion SSDs. Pricing has not yet been announced, although the TR200 series will start shipping to retailers this fall.

Sources: Toshiba, via AnandTech

PNY Launches the CS1311b Budget SSD

PNY Technologies considered one of the worldwide leaders in consumer electronics market and flash memory products, is proud to announce the launch of the new CS1311b solid state drives. Targeting the sweet spot of price against performance, the CS1311b SSDs are 20 times faster than traditional hard drives, promising an affordable solution to boost your PC performance without breaking the bank.

The 2.5-inch form factor SSDs weighing only 35gms and having dimensions of 100 mm (L) x 70 mm (W) x 7 mm (H), can be installed in not only almost every notebook computer and Ultrabook, but even in regular desktop PCs, thus supporting an easy performance upgrade in a very wide range of computers. The absence of moving parts not only guarantees the safety of your data against mechanical shocks, but it also means cool and quiet operation. The very low power consumption easily translates into better battery life for notebook and Ultrabook computers.

Western Digital Announces Four-Bits-Per-Cell (X4) Technology on 3D NAND

Western Digital Corp. today announced its successful development of four bits per cell, X4, flash memory architecture offering on 64-layer 3D NAND, BiCS3, technology. Building on its pioneering innovation of X4 for 2D NAND technology and past success in commercializing it, the company has now developed X4 for 3D NAND by leveraging its deep vertical integration capabilities. These include silicon wafer processing, device engineering to provide sixteen distinct data levels in every storage node, and system expertise for overall flash management. BiCS3 X4 technology delivers an industry-leading storage capacity of 768 gigabits on a single chip, a 50 percent increase from the prior 512 gigabit chip that was enabled with the three bits per cell (X3) architecture. Western Digital will showcase removable products and solid-state drives built with BiCS3 X4 and systems capabilities in August at the Flash Memory Summit in Santa Clara, California.

"The implementation of X4 architecture on BiCS3 is a significant development for Western Digital as it demonstrates our continued leadership in NAND flash technology, and it also enables us to offer an expanded choice of storage solutions for our customers," said Dr. Siva Sivaram, executive vice president, Memory Technology, Western Digital. "The most striking aspect in today's announcement is the use of innovative techniques in the X4 architecture that allows our BiCS3 X4 to deliver performance attributes comparable to those in BiCS3 X3. The narrowing of the performance gap between the X4 and X3 architectures is an important and differentiating capability for us, and it should help drive broader market acceptance of X4 technology over the next several years."

ADATA Launches ISSS314 Industrial-Grade SSDs in 3D MLC and 3D TLC NAND Versions

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched industrial-grade ISSS314 solid state drives in 3D MLC and 3D TLC versions. All models can withstand a wide temperature range, extreme shocks and vibrations, as well as humidity to meet the needs of industrial users. Using hardened and carefully sorted components, ISSS314 SSDs consume just 2.5W to lower operating costs while providing speedy 560 MB/s read and 520 MB/s write. They are offered in 3D MLC and 3D TLC NAND plus capacities ranging from 32GB to 512 GB in order to better cover and serve as many budgets and needs as possible.

The increased durability and power efficiency of stacked NAND Flash compared to older planar NAND offers very appealing advantages in applications that require non-stop and long term use. The ISSS314 range has an MTBF of 2 million hours, which is 25% more than comparable 2D NAND drives. At the same time, they consume just 2.5W per drive while reaching 512 GB in capacity. Modest power draw translates into major electricity savings over the life of the drive, especially in large installations where many units are needed. Across the range, ISSS314 drives reach 560 MB/s read and 520 MB/s write.

Where's My Storage? Viking Technology Begins Shipping 25 TB, 50 TB 3.5" MLC SSDs

If there's one thing enthusiasts usually complain regarding SSDs is that here doesn't seem to exist any viable alternatives to a good old high-capacity platter-based drives. Where are my 2 TB SSDs for 200$? How can I possibly save my entire music library in this puny 512 GB SSD that has already cost me my arms and legs?

Well, those answers might not be coming anytime soon (even though the advent of QLC NAND might change that.) In the meantime, we can put our eyes on Viking Technology, so as to see that a halo SSD product can achieve amazing storage capacity in a standard form factor. The company has just started selling their UHC (Ultra High Capacity) Silo Series, which leverage SK Hynix's MLC NAND (if the capacity doesn't put your $ klaxons running, the use of MLC should.) The SSDs leverage a 6 GB/s SAS interface, and deliver 500 MB/s read and 350 MB/s write speeds. The manufacturer says these can sustain up to 60,000 IOPS on random reads, and 15,000 IOPS on random writes. These may sound low in high-performance terms (and they sort of are), but remember these are products geared for the enterprise market. Pricing wasn't (maybe smartly) disclosed. I believe I'd laugh maniacally should I know how much they cost. However, if you must have a high-capacity SSD, you know where to look for.

Sources: Tweakers.net, Thanks @ P4-630!

ADATA Confirms XPG SPECTRIX D40 RGB DDR4 With ASUS AURA Sync Support

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today announced that its upcoming XPG SPECTRIX D40 RGB DDR4 has been certified compatible with ASUS AURA Sync software. This allows users of ASUS motherboards to personalize the RGB lighting elements built into D40 modules with choice of color range, lighting sequence, and more. SPECTRIX D40 modules have been optimized for the Intel X299 platform with a starting speed of 2666MHz. They are also compatible with AMD AM4 motherboards. Designed for gamers, overclockers, and case modders, SPECTRIX D40 DDR4 modules provide more options and customization features and support the trend towards builds that incorporate sophisticated RGB and LED.

Toshiba and WD Power Struggle Continues - WD Bid for Toshiba's Business 6 Times

You must remember the ongoing house of horrors that is Toshiba's financial situation. Granted, it isn't that bad - the company is still managing to push the envelope on its semiconductor production business. Still, I'm sure the company would have liked to not be on the verge of selling out 20% of its memory business production stake - which is one of the company's most profitable divisions to begin with.

ADATA Releases XPG GAMMIX Line with S10 PCIe Gen3x4 NVMe 1.2 SSD and D10 DDR4

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today launched its XPG GAMMIX product series, first shown at Computex 2017. The debut consists of the GAMMIX S10 PCIe3x4 NVMe 1.2 M.2 2280 SSD, capable of 1800 MB/s read and 850MB/s write thanks to premium 3D NAND in up to 1TB capacity. The S10 features a stylish heatsink for expedited heat dissipation. It is joined by GAMMIX D10 DDR4 memory modules, which likewise boast a custom heatshield to ensure lower temperatures and more stable performance. They are offed in black and red colors, and in up to 3000 MHz factory speeds with a starting speed of 2666MHz on new Intel X299 motherboards. The GAMMIX line provides gamers, PC DIY enthusiasts, and overclockers with additional options that combine performance and design, stemming from the core XPG mission statement of ensuring better experiences.

Corsair Neutron NX500 SSD on Newegg; Available in 400 GB and 800 GB

Corsair has quietly added a new SSD to its portfolio which is currently available on Newegg. The new Neutron NX500 SSDs come in somewhat unusual 400 GB and 800 GB capacities, which likely means an overly increased over provisioning so as to ensure top endurance and performance. The Neutron NX500 SSDs come in the add-in NVMe card form factor, with a beefy heatsink to top it all up. That heatsink serves to cool not only the NAND chips, but also the Phison E7 controller that's lurking underneath.

Interestingly, and even though 3D TLC NAND is all the rage these days due to increased density on the same footprint, without bringing any serious, real-world problems related to endurance, as we've seen, the Neutron NX500 appears to pack MLC memory. Do you even remember that? That's part of the reason why performance is rated so high: there's 3,000 MB/s read, 2,400 MB/s writes, 300,000 IOPS in random read, and 270,000 IOPS on random write workloads. Though you will have to pay a pretty penny for this kind of performance: the 400 GB Corsair Neutron NX500 is currently retailing for $319.99, while the 800 GB version won't give you any benefits from the economy of scale: it retails for $699.99.

Source: Tom's Hardware

Toshiba Develops World's First 3D Flash Memory with TSV Technology

Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world's first BiCS FLASH three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.

Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba's 2D NAND Flash memory.

Sk Hynix Begins Mass Production of 72-Layer 3D NAND

After announcing their intention to begin mass production of their latest 72-Layer 3D NAND Flash back in April, SK Hynix has now confirmed that it has entered mass production of the high density NAND modules. Apparently, SK Hynix has already achieved the much sought-after "golden yield" ratios, where the semiconductor yield is now at such a level that it is advantageous to finally enter mass production. Apparently, SK Hynix's leadership was fearful of not being able to achieve the golden yield in a timely manner after their announcement of the technology only three months ago; however, after its "management team and engineers repeatedly spent nights doing research, yield went up vertically and has become comparable to Samsung Electronics'" own yield - and as you know, Samsung is kind of the golden standard when it comes to NAND technology.

According to industry sources, SK Hynix is already mass-producing SSDs (Solid State Drives) with the company's own controllers and firmware which leverage this new 72-layer 256Gb NAND flash memory. This is a welcome change for the company which should allow it to increase revenue, since this is the first time controllers are developed in-house. The company is also said to be already producing eMMC (embedded Multimedia Card) for mobile devices based on this technology, with supply already arriving to its customers.

Source: English ET News

Samsung's New $13B V-NAND Factory Begins Production

Samsung is one of the top tech players in the world, with tendrils extending through almost all conceivable markets. That position, and the varied sources of income the company has at its disposal, gives it enough leeway to make investments that echo throughout the industry, Now, after a 15 trillion won investment (something like $13 billion), the company's latest V-NAND fab has started production in Pyeongtaek.

The fab will produce the firm's latest three-dimensional, 64-layer 256Gb V-NAND chips. Here's hoping the expected influx of higher quantities of NAND memory will allows us poor users to see a stop to the NAND pricing increase we've been seeing of late. Not everybody needs all the NAND available in smartphones.

Source: ZD Net

Toshiba's 768 Gb 3D QLC NAND Flash to Match TLC's Program/Erase Cycles

Not all news coming out of Toshiba is bad or somewhat bad. The Japanese giant still is one of the biggest players in the NAND semiconductor business, no matter the recent woes. Even more recently, though, Toshiba announced they had developed quadruple level cell NAND memory, which should improve density and, therefore, reduce the price/GB ratio on future consumer products, such as SSDs. However, each increase in the number of cell levels bring concerns regarding not only performance, but especially durability, since a higher number of states per cell increases the voltage steps that are applied to it (SLC NAND dealt with two voltage states, MLC with four, TLC with eight voltage states, and QLC will handle 16 of these.) This tends to make errors more common, and the cell's longevity to be compromised due to the amount of variation in its states, which means more powerful error correction techniques must be employed.
According to Toshiba, its 3D QLC NAND targets around ~1000 program/erase cycles, which is close to TLC NAND flash. This is considerably higher than the amount of P/E cycles (100 - 150) expected for QLC by the industry, which means the company has achieved what many thought difficult. Toshiba has begun sampling of its 3D QLC NAND memory devices earlier this month. everything points to mass production on late 2018, early 2019, though, which means we still have a long way to go until we see this technology implemented. This won't be the one to save us from escalating NAND prices; we'll have to look to other, more market and supply-and-demand based factors instead.Source: Anandtech

ADATA Updates External Hard Drive Range with HD710 Pro and New HD650

ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the HD710 Pro durable external hard drive alongside an addition to the best-selling HD650 range. The HD710 Pro improves on its HD710 predecessor by exceeding IP68 dust and waterproofing plus military-grade shock resistance. It enhances the safeguarding of stored data against accidents, damage, and the rigors of active lifestyles, and is available in four colors. The HD710 Pro offers up to 4TB capacity. The refreshed HD650 arrives in a stylish light blue over black color scheme, also providing 4TB capacity - a new milestone for unpowered USB external hard drives. Together, these two new USB 3.1 models bolster the ADATA external hard drive portfolio, giving consumers more choice.

Intel Intros SSD 545s Mainstream SATA SSD

Intel today announced the SSD 545s line of mainstream SATA solid-state drives. Built in the 7 mm-thick 2.5-inch form-factor with SATA 6 Gbps interface, the drives combine new 64-layer 3D TLC NAND flash memory by IMFlash Technology, with a Silicon Motion SMI SM2259 controller, and a custom firmware by Intel. For now, the drive is only available in one capacity, 512 GB. It offers sequential transfer speeds of up to 550 MB/s, with up to 500 MB/s sequential writes; 4K random read performance of up to 75,000 IOPS, 4K random write performance of up to 85,000 IOPS, and endurance of at least 144 TBW. Besides common SSD features such as NCQ and TRIM, the drive offers native 256-bit AES encryption. Available now, and backed by a 3-year warranty, the SSD 545s 512 GB is priced at USD $179.99.

Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory

Toshiba America Electronic Components, Inc. (TAEC) today announced the latest generation of its BiCS FLASH three-dimensional (3D) flash memory. The newest BiCS FLASH device features 4-bit-per-cell, quadruple-level cell (QLC) technology and is the first 3D flash memory device to do so. Toshiba's QLC technology enables larger (768 gigabit) die capacity than the company's third-generation 512Gb 3-bit-per-cell, triple-level cell (TLC), and pushes the boundaries of flash memory technology.

Toshiba's new QLC BiCS FLASH device features a 64-layer stacked cell structure and achieves the world's largest die capacity (768Gb/96GB). QLC flash memory also enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package - featuring the industry's largest capacity. This is a fifty percent increase in capacity per package when compared to Toshiba's earlier announcement of a 1TB device with a 16-die stacked architecture in a single package - which also offered the largest capacity in the industry at the time.

No Relief for DRAM and NAND Shortages in Sight; Considerable Supply Only in 2018

DRAM prices have been high for quite some time now, due to a general increased demand over a slowly improving supply capability from manufacturers. Pricing of DRAM has been increasing (to the tune that if I wanted to double my memory capacity, I would have to pay double of what I paid a mere 11 months ago.) NAND pricing has been affected as well, with newer technologies such as 3D NAND not having a relevant impact on end user pricing as was expected, since tight supply and growing demand means process-level savings are dwarfed by the increasing prices on the balance of supply and demand.

Most of our woes can be traced back to high-end smartphones, which make use of up to 6 GB of RAM and have copious amounts of NAND memory. Now, reports are coming in that due to the iPhone 8's impending launch, supply is even tighter, with several firms being either unable to secure the amount of Ram they are looking for, or having to order in significant advance (futures speculation anyone?) Reuters is reporting that some clients have moved to 6-month supply agreements for their DRAM and NAND purchases, accepting higher prices than the customary quarterly or monthly deals, to make sure they get enough memory chips for their products.

Samsung Ramps up 64-Layer 3D V-NAND Memory Production

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications. Since Samsung began producing the industry's first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end. "Following a long commitment to innovative technology, we will continuously push the limits of generations of industry-first V-NAND production, in moving the industry closer to the advent of the terabit V-NAND era," said Kye Hyun Kyung, Executive Vice President of the Flash Product and Technology team, Memory Business at Samsung Electronics. "We will keep developing next-generation V-NAND products in sync with the global IT industry so that we can contribute to the timeliest launches of new systems and services, in bringing a higher level of satisfaction to consumers."

NVMe 1.3 Specification Published

NVM Express, the special interest group behind the NVMe protocol, which enables significantly higher performance on flash-based storage devices, compared to the AHCI protocol, published the NVMe 1.3 specification. This is the most significant update to the protocol since the NVMe 1.2 specification released in 2014. NVMe 1.3, which could be implemented in SSDs, motherboards, and HBA cards starting late-2017 or 2018, introduces several major features that increase performance, endurance, and manageability of flash-based storage devices, such as SSDs.

To begin with, NVMe 1.3 introduces a drive self-test feature similar to SMART. The host machine can now command the drive to perform a self-test without having to mount volumes and expose their contents to OS-based utilities. The self-test parameters could be left up to the drive vendor, and could include hardware tests in addition to data integrity tests. The protocol also adds much needed support for boot-partitions, without needing the motherboard UEFI firmware to store it. The current implementation of motherboards with NVMe booting support involves storing a tiny boot partition with the bootloader on the SPI flash chip of the motherboard which stores the UEFI firmware.

ADATA Launches ISSS333 Industrial-Grade Solid State Drives

ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched industrial-grade ISSS333 solid state drives in 3D MLC and 3D TLC versions. The ISSS333 range offers robust temperature, vibration, and shock tolerance as required in commercial and industrial applications. At the same time, users tap fast performance via universally-compatible SATA 6Gbps in a standard 2.5" form factor. Compared to mechanical storage, ISSS333 drives deliver vastly increased reliability, speed, and power efficiency.

While SSDs become more popular as industrial and commercial storage, demand diversifies. Consequently, ADATA offers the ISSS333 range in 3D MLC and 3D TLC (multi-level cell and triple-level cell) versions. The use of 3D NAND ensures improved reliability and efficiency compared to older 2D NAND, with the MLC models ranging in capacity from 120GB to 1TB while TLC ISSS333 drives ship in 128GB to 1TB.

Samsung Could Become Top Chipmaker in 2Q17, Dethrone Intel

Samsung could be on the verge of a historic dethroning of Intel as the dominant chipmaker in the IC world, if a recent report from IC Insights is to be believed. The report shows Samsung actually exceeding Intel's semiconductor sales in 2Q 2017, no doubt spurred on by mobile market growth and the proliferation of ARM based SOCs manufactured by Samsung.

Intel has held the dominant position for nearly a quarter century as its x86 architecture powered most PCs and notebooks/netbooks since 1993. The number of components they sell is not just limited to CPUs either: Intel is a provider of chips for everything from networking to thermal sensors, for Samsung to compete with such a giant in the semiconductor market at all (let alone exceed their sales) is quite a feat indeed.

Transcend Announces Four SSD Product Lines Based on 3D NAND

Transcend Memory announced four client SSD product lines based on 3D NAND flash memory. The lineup begins with the new MTS810 and MTS420 lines of mainstream SSDs built in the M.2-2280 and M.2-2242 form-factors, respectively, which take advantage of the SATA 6 Gb/s interface. The MTS810 succeeds the MTS800 series the company launched in 2016. It is based on a newer TLC NAND flash memory, and a more compact SSD controller made by Silicon Motion. The drive puts out up to 560 MB/s of sequential transfer rates. The MTS420 is its miniaturized version in the M.2-2242 form-factor. Both drives will be available only in 128 GB capacities.

Next up, is the SSD230 series. The company already announced this drive back in November 2016. Built in the 7 mm-thick 2.5-inch form-factor, it comes in 128 GB, 256 GB, and 512 GB capacities, and offers sequential transfer rates of up to 560 MB/s reads, with up to 520 MB/s writes. Lastly, Transcend unveiled its latest high-performance M.2-2280 SSD, which takes advantage of the PCI-Express 3.0 x4 interface with NVMe 1.2 protocol, the MTE850 series. Available in 128 GB, 256 GB, and 512 GB capacities, the drive belts out sequential transfer rates of up to 2,500 MB/s reads, with up to 1,100 MB/s writes. It features 3D MLC NAND flash memory.
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