News Posts matching "NAND"

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Toshiba Memory and Western Digital Celebrate the Opening of Fab 6

Toshiba Memory Corporation and Western Digital Corporation today celebrated the opening of a new state-of-the-art semiconductor fabrication facility, Fab 6, and the Memory R&D Center, at Yokkaichi operations in Mie Prefecture, Japan. Toshiba Memory started construction of Fab 6, a dedicated 3D flash memory fabrication facility, in February 2017. Toshiba Memory and Western Digital have installed cutting-edge manufacturing equipment for key production processes including deposition and etching. Mass production of 96-layer 3D flash memory utilizing the new fab began earlier this month.

Demand for 3D flash memory is growing for enterprise servers, data centers and smartphones, and is expected to continue to expand in the years ahead. Further investments to expand its production will be made in line with market trends. The Memory R&D Center, located adjacent to Fab 6, began operations in March of this year, and will explore and promote advances in the development of 3D flash memory. Toshiba Memory and Western Digital will continue to cultivate and extend their leadership in the memory business by actively developing initiatives aimed at strengthening competitiveness, advancing joint development of 3D flash memory, and making capital investments according to market trends.

ADATA XPG Announces Partnership with Flash Wolves eSports

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash products, today announces that is has formed a partnership with one of Taiwan's biggest names in eSports, the Flash Wolves. This partnership comes on the heels of ADATA's recent sponsorship of the IeSF World Championship 2018 in Kaohsiung, signaling its continued commitment towards supporting the growth of eSports in Taiwan and around the world.

"We are thrilled to be sponsoring the Flash Wolves as it is an extension of our mission of delivering high-performance hardware that enhances the experiences of gamers of all levels, from beginners to professionals," said Simon Chen, Chairman and CEO of ADATA. "Going forward, ADATA will continue to promote the development of eSports in Taiwan and other regions by working closely with all stakeholders, from eSports teams and event organizers to government entities.

Samsung, SK Hynix Slowing Down NAND, DRAM Fab Expansion Plans in Wake of Lower Demand Projections

DigiTimes is reporting plans from both Samsung and SK Hynix to slow down their fabrication capacity expansion plans for NAND and DRAM in wake of lower than expected demand projection for the first half of 2019. This move comes at a time where DRM pricing is still extremely prohibitive due to "higher demand than fabrication capacity output" - and we'd already seen the companies base their fabrication expansions on lower than expected demand increases, as a way to artificially keep pricing for the memory commodity high. NAND is another case - price per GB has been dropping like a rock. And now, the companies want to thwart expected lower demand with lower production values.

Samsung, for one, has reportedly put its plans for additional new production capacity for 1ynm DRAM chips at its fabs in Hwaseong and Pyeongtaek on hold. The chip vendor previously planned to build an additional 30,000 wafers monthly for DRAM memory starting the third quarter of 2018, the sources said - but is now looking to reduce that number to keep pricing from bottoming out. Sk Hynix is also reported to have slowed down its projected production, but details are scarcer on that side of the fence. All in all, it seems that whether there is demand or not, seeing DRAM prices falling to their previous levels is a dream in both name and, not paradoxically, reality.

KINGMAX Announces PJ3280 Entry-level M.2 NVMe SSD

KINGMAX, a world-renowned professional memory manufacturer, has consummated its product line of M.2 2280 PCIe NVMe solid-state drives (SSDs), providing users who want to improve their PC performance with a greater variety of choices. In addition to the ultra-fast M.2 PCIe SSD PX-3480 (Gen3x4) and the PX-3280 (Gen3x2), the affordable/entry-level PJ-3280 (Gen3x2) has also been introduced, allowing users who are considering turning to SSDs to boost their computer performance a higher-speed and more economical option aside from 2.5-inch solid-state drives.

An increasing variety of motherboards or notebooks are currently available on the market, including motherboards equipped with Intel Z270, X99 and the latest 2 Series/3 Series chipsets, all of which are equipped with the M.2 PCIe interface as standard equipment to enable future upgrades. As long as the M.2 slot is the M key version, a solid-state drive that comes with the M.2 PCIe interface can be employed to push the speed and performance of a computer to higher levels. The KINGMAX M.2 2280 NVMe SSD PJ-3280 (Gen3x2) is manufactured using 3D NAND Flash stacking technology, making it highly efficient, stable and durable. Meanwhile, the M.2 2280 is 22x80 mm in size and is available in capacities of 128GB, 256GB or 512GB, suitable for improving the performance of space-challenged notebooks and ultrabooks while expanding capacity.

Crucial Announces New BX500 Series of Entry Level SSDs

Crucial has become one of the biggest players in the consumer SSD market due to their excellent price/capacity/performance ratios (their SSDs consistently score highly in our own resident wizard's reviews for some reason, after all). Now, the company is looking to lower price/GB even more as it launches the BX500 series to the market - available in capacities of 120 GB, 240 GB and 480 GB using Micron 3D NAND chips.

Yes, it's a SATA III SSD. And yes, the SATA III connector really is a limiting factor in this SSD's performance - but remember that SATA III controllers are much less costly than NVMe implementations. Sequential performance is rated for up to 540MB/s read and 500MB/s write (4K performance is sadly absent). The whole plethora of usual SSD technologies are here as well - multi-step data integrity algorithm, thermal monitoring, SLC write acceleration, active garbage collection, TRIM support, self-monitoring and reporting technology (SMART) and error correction code (ECC)... For the pricing, these are likely of the DRAM-less variety of SSDs, which means SLC caching is of utmost importance for performance. But pricing really is some of the lowest ever - Crucial is quoting $29.99 for the 120 GB model, $49.99 for the 240 GB one and $89.99 for 480 GB worth of BX500 storage. Crucial will start shipping out orders on August 31st.

NAND Flash Prices Could Reach $0.08/GB in 2019

Prices of NAND flash could drop to historic lows of $0.08 per gigabyte in 2019, according to Jim Handy from Objective Analysis, addressing delegates at the 2018 Flash Memory Summit. If you add the cost of the controller, optional DRAM chip, and other low-cost parts that make up an SSD, 480~512 GB drives under $70 could finally be a reality; followed by 1 TB under $120, and 2 TB under $200. Handy attributes the low prices to a catastrophic oversupply of NAND flash in the industry, which could push manufacturers to the brink of economic collapse.

The price drop is also accelerated with the introduction of the QLC (4 bits per cell) technology, which increases densities (and conversely decreases price/GB). Luckily, most NAND flash manufacturers also happen to make DRAM, and are offsetting some of their NAND flash losses with DRAM profits, as DRAM remains in undersupply. The NAND flash price-crash threatens to wipe out conventional hard-disk drives from the consumer-space, at least in matured markets; relegating them to developing markets.

Seagate Launches Nytro 1000 SATA SSD Series with SandForce's DuraWrite Technology

Expanding on its Nytro portfolio of enterprise flash products, Seagate today announced the launch of its new Nytro 1000 Series SATA SSD drives. The Seagate Nytro 1000 SATA SSD series (which includes the Nytro 1351 and Nytro 1551 SSDs) delivers ultra-fast, consistent performance for read-intensive workloads. Globally available in the fall, the Nytro SSDs is being demonstrated at this week's Flash Memory Summit in Santa Clara.

The Nytro SSD series is designed to serve as the backbone of the enterprise's cloud infrastructure, making it ideal for data center managers looking to upgrade their existing systems.

Samsung starts Mass Production of QLC Consumer SSDs, 1 TB, 2 TB, 4 TB with over 520 MB/s Read/Write

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 4-bit (QLC, quad-level cell) 4-terabyte (TB) SATA solid-state drive (SSD) for consumers.

Based on 1-terabit (Tb) V-NAND with outstanding performance equivalent to the company's 3-bit design, Samsung's QLC SSD is expected to bring a new level of efficiency to consumer SSDs.

TrendForce: Contract Prices in NAND Flash Market Will Keep Falling in 2H18 Due to Oversupply and Weak Seasonal Demand

The latest analysis on the NAND Flash market by DRAMeXchange, a division of TrendForce, forecasts that the ASP of NAND Flash will drop by around 10% QoQ respectively in 3Q18 and 4Q18. Although 3Q18 heralds the traditional peak season for the sales of consumer electronics, the growth of the end market demand has been weaker than anticipated. At the same time, the supply of 3D-NAND Flash continues to expand.

DRAMeXchange points out that the main reason behind the falling prices is oversupply at various levels. First, the annual shipments for smartphones this year are expected to be just on par with last year's. The replacement demand for smartphones has been sluggish due to the lack of differentiation among products in terms of hardware specifications. Second, notebook shipments were very strong in 1H18, so the seasonal shipment growth for notebooks in 2H18 will be lackluster compared with the growth in the year's first half as the base period. Third, the competition is very intense in the server SSD market. Although demand for server systems is growing steadily, there is an oversupply of server SSDs because too many suppliers are engaging in this profitable segment. Finally, NAND Flash suppliers have raised their output forecasts as they have expanded their production capacity and improved the yield rates of their 64/72-layer 3D-NAND production. Given the above factors that have led to a persistent oversupply, contract prices of various NAND Flash products will remain weak through 2H18.

ADATA Launches UD230 and UD330 USB Flash Drives

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today launched the UD230 and UD330 USB Flash drives. Featuring a capless, folding-cover design and a large lanyard hole for attaching to straps and keychains, they are easy-to-use and well-suited for on the go. The UD230 works in USB 2.0 and offers up to 64GB of storage, while the UD330 works in USB 3.1 and comes with up to 128GB storage. Both models are manufactured with the Chip-On-Board (COB) process, whichallows them to be more compact in size and more resistant to impact, water, and dust. ADATA remains committed to its USB Flash drive global leadership role and will continue releasing new models as market needs evolve.

Sporting a folding-cover design, the UD230 and UD330 remedy the universal dilemma of misplaced caps. The USB connector can be stored in the cover while not in use. This simple yet intuitive design helps make the UD230 and UD330very satisfying to use on the go.In addition, both models come with a large lanyard hole for convenience and personalization, allowing users to attach them to lanyard straps or keychains for easy carrying.

Western Digital Introduces Ultrastar DC SS530 Dual-port SAS SSD

Western Digital Corporation, a data technology leader, today introduced the new Ultrastar DC SS530 SAS SSD, the company's highest-density drive and the fastest dual-port SAS SSD in the market¹, enabling server and storage array manufacturers to offer customers substantially lower data center TCO for Fast Data applications. By doubling maximum capacity of the previous generation to 15.36TB within the same 2.5-inch 15-mm form factor, drive storage density also doubles, giving IT managers the potential to reduce the number of drives deployed, consolidate servers and open up valuable rack space for improved CapEx and OpEx costs.

Developed in partnership with Intel , the Ultrastar DC SS530 is based on a trusted third-generation platform that has been previously qualified at most major OEMs worldwide. It offers consistent performance and reliability to meet the rigorous demands of today's toughest data center workloads. Designed with a 12Gb/s SAS interface, and available in capacities from 400GB to 15.36TB, the Ultrastar DC SS530 delivers up to 440,000 random read and 320,000 random write IOPS - providing rapid access to "hot" enterprise data for higher productivity and operational efficiency.

Western Digital Releases 96-layer 3D QLC NAND with 1.33 Tb Capacity

Western Digital Corp. today announced successful development of its second-generation, four-bits-per-cell architecture for 3D NAND. Implemented for the company's 96-layer BiCS4 device, the QLC technology delivers the industry's highest 3D NAND storage capacity of 1.33 terabits (Tb) in a single chip. BiCS4 was developed at the joint venture flash manufacturing facility in Yokkaichi, Japan with our partner Toshiba Memory Corporation. It is sampling now and volume shipments are expected to commence this calendar year beginning with consumer products marketed under the SanDisk brand. The company expects to deploy BiCS4 in a wide variety of applications from retail to enterprise SSDs.

Samsung to Increase NAND Production Capacity in 2019, Upping Investment to $9 billion

Samsung is reportedly looking to increase its investment in the NAND space with a $2.6 billion increase to its annual NAND budget. The increase, which will bring the company's investment up to $9 billion, aims to increase production volume in what is building up to be the actual technology of choice for key players in the storage market.

Remember that for all the investment in increasing density and declining price per GB of competing mechanical solutions, we've just had notice of an HDD fabrication plant that's shutting down. Most of the funding will reportedly go into increasing production volume of 3D NAND memory. Should demand stay relatively stable, the (eventual) additional influx of memory chips to the market should help drive costs even lower - provided there's no funny business in price setting, of course.

Samsung Electronics Brings Next Wave of High-Performance Storage with Mass Production of Fifth-Generation V-NAND

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry's first use of the 'Toggle DDR 4.0' interface, the speed for transmitting data between storage and memory over Samsung's new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.

The energy efficiency of Samsung's new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.

Micron Provides Statement on Fujian Province Patent Litigation

(Editor's Note: We'll see if this statement from Micron is enough to staunch the bleeding on its shares - which it should, since the company says no recognizable impact will exist on its bottom line. If things are as they seem (and yet, they seldom are), this is a checkmate move from Chinese manufacturing companies - eventually supported by the Chinese government - and an interesting way to lock China's voracious DRAM and NAND market to fully domestic manufacturers.)

Micron Technology, Inc., announced that the Fuzhou Intermediate People's Court, Fujian Province, China today notified two Chinese subsidiaries of Micron that it has granted a preliminary injunction against those entities in patent infringement cases filed by United Microelectronics Corporation (UMC) and Fujian Jinhua Integrated Circuit Co. (Jinhua). The patent infringement claims of UMC and Jinhua were filed against Micron in retaliation for criminal indictments filed by Taiwan authorities against UMC and three of its employees and a civil lawsuit filed by Micron against UMC and Jinhua in the United States District Court for the Northern District of California for the misappropriation of Micron trade secrets.

Micron Technology Faces Ban in China After Losing IP Spat to UMC

Stocks of Micron Technology tanked on Tuesday as reports emerged of the company being banned in China, the world's largest semiconductor market. A Chinese court ruled in favor of Taiwanese semiconductor foundry UMC in its patent infringement lawsuit against Micron. The Fuzhou Intermediate People's Court issued a preliminary injunction stopping the sale of 26 Micron products, spanning across both its DRAM and NAND flash product lines, UMC said in a statement.

Micron, meanwhile, maintains that it hasn't read the injunction order yet, and that it won't comment until it does. Micron's position is doing precious little in stopping its hemorrhage at the markets, as its stock prices fell 8 percent at the time of this writing. The Micron-UMC spat is fascinating in a broader geopolitical context. Micron accuses UMC of serving as a conduit for funneling away its IP to midwife Chinese DRAM companies such as Fujian Jinhua Integrated Circuit Co. It is the counter-suit to this by UMC, which was won today. China accounted to more than 50 percent of Micron's revenues in FY 2017, with most of the chips being mopped up by the consumer electronics and PC manufacturing industries.

ADATA Intros SR2000CP PCI-Express 3.0 x8 AIC SSD

ADATA introduced the SR2000CP a new enterprise SSD for when you absolutely, positively, need to push data at 6 gigabytes per second. Built in the half-height add-on card form-factor with PCI-Express 3.0 x8 interface, the drive ships in capacities of 2 TB, 3.5 TB, 4 TB, 8 TB, and 11 TB. The drives use 3D "eTLC" NAND flash. This type of memory has the 3 bits per cell characteristics of TLC, but endurance (P/E cycles) comparable to MLC NAND flash, which lends it endurance of 1~3 DWPD under a 5-year warranty.

The 4 TB variant tested by ADATA, churns out some impressive performance numbers - up to 1 million IOPS 4K random reads, up to 150,000 IOPS 4K random writes; and sequential transfer speeds of up to 6 GB/s reads, with up to 3.8 GB/s writes. You also get enterprise essentials such as user-configurable overprovisioning, power-loss protection, native 256-bit AES encryption, and up to protection against 95% relative humidity and 55°C ambient temperature (Google's datacenters). The company didn't reveal pricing as the drives could be served up to enterprise customers.

Samsung Receives the Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

TrendForce: Price Decline Will Continue in NAND Flash Market in 2H18

The growth momentum for 2H18 NAND Flash market is expected to be weak, according to the latest report of DRAMeXchange, a division of TrendForce. Coupled with continuous improvements in yield rate and output of 64/72-layer 3D NAND Flash, DRAMeXchange expects the market to approach a balance between supply and demand, the contract prices of NAND Flash products are expected to decline further.

The contract prices of NAND Flash products have been decreasing for two consecutive quarters in 1H18 due to the traditional off-season and capacity expansion of 64/72-layer 3D NAND Flash. During this period, suppliers provided competitive prices for high-density products to boost the memory content per box, aiming to further improve the demand in peak season. Meanwhile, suppliers have postponed further plans of capacity expansion, hoping to moderate the price decline.

Micron Ready With 96-Layer Flash & 1Y nm DRAM in 2H 2018

In their recent earnings call, Micron commented that they have 96-layer 3D NAND technology on track for volume shipments in the second half of 2018. Most of today's SSDs typically use 32-layer technology, with 64-layer flash chips used in some recent releases like the Crucial MX500. 96-layer is the third generation of 3D NAND and increases storage capacity per chip even further which allows smaller and more energy efficient mobile devices to be built. Of course it will be cheaper too, compared to current-generation 64 layer NAND, which should bring SSD pricing down even more, and of course generally help pricing of consumer products which use flash memory.

The second important note from the presentation is that Micron expects 1X nm (18 nm) DRAM production to exceed that of previous generations before the end of this year. Their next-generation 1Y nm (15/16 nm) DRAM is on track to begin production shipments in the second half of 2018, too. As they noted in a previous event, their product and process roadmap for DRAM 1z looks solid and 1-alpha development programs already under way.

Samsung Introduces 8 TB NVMe SSD For Data Centers

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched the industry's highest capacity NVMe solid state drive (SSD) based on the incredibly small Next-generation Small Form Factor (NGSFF) - an eight-terabyte (TB) NF1 SSD. The new 8TB NVMe NF1 SSD has been optimized for data-intensive analytics and virtualization applications in next-generation data centers and enterprise server systems.

"By introducing the first NF1 NVMe SSD, Samsung is taking the investment efficiency in data centers to new heights," said Sewon Chun, senior vice president of Memory Marketing at Samsung Electronics. "We will continue to lead the trend toward enabling ultra-high density data centers and enterprise systems by delivering storage solutions with unparalleled performance and density levels."

Toshiba First to Deliver Value SAS SSDs Targeting SATA Applications

Today Toshiba Memory America, Inc., the U.S.-based subsidiary of Toshiba Memory Corporation, unveiled a new, game-changing category of SAS SSDs expected to replace SATA SSDs in server applications. The RM5 12Gbit/s value SAS (vSAS) series features capacity, performance, reliability, manageability and data security advantages - at a price that obsoletes SATA SSDs.

A homogeneous SAS environment has long been the gold standard for enterprise server and storage systems. With vertical integration expertise in flash technology, firmware and controller design, Toshiba leveraged its leading position as the world's leading SAS SSD line optimizing RM5 to close the cost gap with SATA - and usher in a new class of SSD. SATA simply cannot compete with SAS, falling well short in terms of performance, robustness and encryption options.

Kingston Adds 2 TB Model to UV500 Series SSD Lineup

Kingston's UV500 family of SSDs debuted last April with capacities ranging from 120 GB all the way up to 960 GB. However, Kingston has decided to add a 2 TB model to the existing lineup due to increasing demands for higher capacity drives. Like its siblings, the 2 TB model also employs the Marvell 88SS1074 controller and 3D TLC NAND. It will also carry the same features like support for 256-bit AES hardware-based encryption and TCG Opal 2.0. While the 120 GB, 240 GB, and 480 GB models are available in 2.5-inch, M.2, and mSATA formats, the 2 TB model only comes in the 2.5-inch form factor. In terms of performance, the 2 TB variant delivers sequential read and write speeds up to 520 MB/s and 500MB/s, respectively. It also offers 4 KB random read performance up to 79,000 IOPS and 4 KB write performance up to 50,000 IOPS. Backed by a 5-year warranty, the UV500 2 TB SSD is priced at $695.50 according to Kingston's website.

Silicon Power Intros AIC3C0P Industrial NVMe SSD

Silicon Power introduced the AIC3C0P, an industrial-grade PCI-Express NVMe SSD in the half-height add-in card form-factor, with PCI-Express 3.0 x4 interface. Available in capacities of 800 GB, 1.6 TB, and 3.2 TB, the drive features MLC NAND flash. It offers sequential transfer rates of up to 3200 MB/s reads, with up to 1850 MB/s writes, and 4K random access speeds of up to 750,000 IOPS reads, and up to 380,000 IOPS writes. Also on offer is power-loss protection, and native 256-bit AES data encryption. The company didn't reveal pricing.

Western Digital Reinforces Commitment to 96-layer, BiCS4 3D NAND

Even as researchers expect 3D NAND flash to achieve the 140-layer level by 2021, technology and manufacturers still have to take all the intermediate steps before we're actually there. In that sense, Western Digital has just announced that they're well on their way in producing 96-layer 3D NAND and distributing it to customers. For now, the memory will be used for inexpensive storage solutions, but the idea is to eventually ramp um production for other, higher-performance products.

Western Digital CEO Steve Milligan kept the production ramp-up (and the expectation of BiCS4 production eventually surpassing BiCS3) under wraps, but it seems all is going well with the production. He added that "(...) if you look to where we at from a yield curve perspective, because [BICS4] is not too mature, we are very pleased with where we are. Because once you get to a certain point, you can project where you are going to end at (based on cycles of learning, etc)." As announced by Western Digital before, it's likely this initial production run is delivering 256 Gb capacity chips, with improvements in yields to allow for increased capacity down the road, eventually, up to 1 Tb capacity per chip.
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