News Posts matching #4D NAND

Return to Keyword Browsing

SK hynix and Solidigm Introduce First Collaborative Product

Today SK hynix and Solidigm jointly introduced their first collaborative product, a new enterprise solid-state drive (eSSD), P5530. This limited release product highlights the emerging partnership between SK hynix and Solidigm, which formed three months ago when SK hynix acquired Intel's NAND and SSD business. The P5530 combines SK hynix's 128-layer 4D NAND flash with Solidigm's SSD controller and firmware supporting a PCIe Gen 4 interface. The product is offered in 1 TB, 2 TB, and 4 TB capacity options. SK hynix and Solidigm worked together to optimize performance with specific data center use cases and targeted deployments in mind.

Since the launch of Solidigm, the companies have partnered to forge a forward-moving strategy and co-develop products while reinforcing common values across the companies. Through the ongoing partnership and collaboration with Solidigm, SK hynix expects to enhance its NAND flash business competitiveness to the same extent as its DRAM business.

"With in-time demonstration of the collaborative product based on the combined competence of SK hynix and Solidigm, we aim to not only enhance our NAND flash business competitiveness but also speed up our "Inside America" strategy," said Kevin (Jongwon) Noh, President and Chief Marketing Officer (CMO) at SK hynix. "SK hynix and Solidigm will continue to partner in order to optimize both companies' operations to create greater synergies."

SK hynix Inc. Reports Third Quarter 2021 Results

SK hynix Inc. (or 'the Company', www.skhynix.com) today announced financial results for its third quarter 2021 ended on September 30, 2021. The consolidated revenue of the third quarter 2021 was 11.805 trillion won, while the operating profit amounted to 4.172 trillion won and the net income 3.315 trillion won. Operating margin for the quarter was 35% and net margin was 28%.

SK hynix achieved record high quarterly revenue since its foundation, and regained operating profit more than 4 trillion won after two and a half years since the fourth quarter of 2018. The increased semiconductor memory demand for server and smartphone (mobile) applications, alongside the improved product prices, contributed to the Company's record-breaking quarterly revenue.

SK hynix Inc. Reports Fiscal Year 2020 and Fourth Quarter Results

SK hynix Inc. today announced financial results for its fiscal year 2020 ended on December 31, 2020. The consolidated revenue of fiscal year 2020 was 31.9 trillion won while the operating profit amounted to 5.013 trillion won, and the net income 4.759 trillion won. Operating margin of for the year was 16%, and net margin was 15%.

"Due to the global pandemic and the intensifying trade disputes last year, the memory market showed sluggish trend," said Kevin (Jongwon) Noh, Executive Vice President and Head of Corporate Center (CFO) at SK hynix. "In the meantime, the Company stably mass-produced its main products such as 1Znm DRAM and 128-layer NAND Flash." Noh also explained, "The Company expanded its server market share based on its quality competitiveness, which resulted in an increase in the revenue and the operating profit by 18% and 84%, respectively, compared to the previous year."

SK hynix Unveils the Industry's Most Multilayered 176-Layer 4D NAND Flash

SK hynix Inc. announced the completion of developing the industry's most multilayered 176-layer 512 Gigabit (Gb) Triple-Level Cell (TLC) 4D NAND flash. The Company provided the samples to controller companies last month to make a solution product.

SK hynix has been promoting 4D technology from the 96-layer NAND flash products that combine Charge Trap Flash (CTF) with high-integrated Peri. Under Cell (PUC) technology. The new 176-layer NAND flash is the third generation 4D product that secures the industry's best number of chips per wafer. This allows the bit productivity to be improved by 35% compared to the previous generation with the differentiated cost competitiveness. The read speed of cell increased by 20% over the previous generation adopting 2-division cell array selection technology. The data transfer speed also has been improved by 33% to 1.6 Gbps adopting speed-up technology without increasing the number of processes.

SK hynix to Acquire Intel NAND Flash Memory Business for $9 Billion

SK hynix and Intel today announced that they have signed an agreement on Oct. 20, KST, under which SK hynix would acquire Intel's NAND memory and storage business for US $9 billion. The transaction includes the NAND SSD business, the NAND component and wafer business, and the Dalian NAND memory manufacturing facility in China. Intel will retain its distinct Intel Optane business.

SK hynix and Intel will endeavor to obtain required governmental approvals expected in late 2021. Following receipt of these approvals, SK hynix will acquire from Intel the NAND SSD business (including NAND SSD-associated IP and employees), as well as the Dalian facility, with the first payment of US $7 billion. SK hynix will acquire from Intel the remaining assets, including IP related to the manufacture and design of NAND flash wafers, R&D employees, and the Dalian fab workforce, upon a final closing, expected to occur in March 2025 with the remaining payment of US $2 billion. Per the agreement, Intel will continue to manufacture NAND wafers at the Dalian Memory Manufacturing Facility and retain all IP related to the manufacture and design of NAND flash wafers until the final closing.

SK hynix to Expand United States Market Presence with the Launch of the World's First 128-Layer NAND Consumer PCIe NVMe SSD

SK hynix Inc., a global semiconductor supplier based in Korea, announced today the release of its newest PCIe SSD: the SK hynix Gold P31. The latest edition is the world's first 128-layer NAND flash-based consumer SSD and the company's first consumer-facing PCIe SSD launched in the United States under the SK hynix brand.

The Gold P31 is intended for all PC users with a particular focus on gamers, designers, and content creators. The drive supports the PCIe NVMe interface based on 4D NAND flash technology and is now available for purchase in 1 TB and 500 GB capacities on Amazon U.S. The Gold P31 offers best-in-class read speeds of up to 3,500 MB/s and write speeds of up to 3,200 MB/s. The drive is a reliable choice for gamers whose PCs must support long hours of play, as well as professional creators and designers for whom performance and stability is essential. The Gold P31's reliability has been tested and validated through 1,000 hours of high-temperature operating life tests (HTOL) with mean time between failures (MTBF) reaching 1.5 million hours. The SSD also comes with a five-year warranty.

A Walk Through SK Hynix at CES 2020: 4D NAND SSDs and DDR5 RDIMMs

Korean DRAM and NAND flash giant SK Hynix brought its latest memory innovations to the 2020 International CES. The star attraction at their booth was the "4D NAND" technology, and some of the first client-segment SSDs based on it. As a concept, 4D NAND surfaced way back in August 2018, and no, it doesn't involve the 4th dimension. Traditional 3D NAND chips use charge-trap flash (CTF) stacks spatially located next to a peripheral block that's responsible for wiring out all of those CTF stacks. In 4D NAND, the peripheral block is stacked along with the CTF stack itself, conserving real-estate on the 2-D plane (which can then be spent on increasing density). We caught two 128-layer 4D NAND-based client-segment drives inbound for 2020, the Platinum P31 M.2 NVMe, and Gold P31 M.2 NVMe. The already launched Gold S31 SATA drive was also there.

SK hynix Displays its Semiconductor Technologies Leading the 4th Industrial Revolution

SK hynix Inc. presents its innovative semiconductor technologies leading the 4th Industrial Revolution at CES 2020, the world's largest trade show for IT and consumer electronics in Las Vegas, USA, from January 7-10, 2020. In line with its "Memory Centric World" theme, SK hynix depicts a futuristic city which effectively utilizes enormous amounts of data. The Company also showcases its semiconductor solutions across six crucial business fields - artificial intelligence (AI), augmented reality (AR) / virtual reality (VR), automotive, Internet of Things (IoT), big data and 5G.

Headlining at CES 2020 are SK hynix's memory solutions including HBM2E, DDR5 for servers, and SSD, which are already highly regarded and widely used in 4th industrial fields such as 5G and AI for their stability, speed, power consumption and density excellence. Other cutting-edge products set to make headlines in January are the Company's highly durable LPDDR4X and eMMC 5.1, which are optimized for automobiles. What's more, SK hynix is displaying its LPDDR5 and UFS that enhance the performance of 5G smartphones as well as CIS (CMOS Image Sensor) which is essential in establishing effective environments for AR/VR and IoT.

SK hynix to Introduce Consumer PCIe NVMe SSDs at CES 2020

SK hynix Inc., a global semiconductor maker based in Korea, is set to introduce its newest offering of "Gold P31" and "Platinum P31" PCIe NVMe Solid State Drives (SSDs) at the Consumer Electronics Show (CES) 2020, which will be held on January 7-10 in Las Vegas, Nevada. The drives are built with SK hynix's 128-layer 4D NAND flash, only six months after the Company announced the mass production of the world's first and highest vertical stack for NAND flash, demonstrating the chipmaker's technological edge.

As a leading manufacturer of memory chips, SK hynix builds and supplies its own DRAM and NAND flash devices, as well as SSD controllers designed and developed in-house. The company has a proven track record as a major supplier to global OEMs including top-tier PC makers, who have trusted and purchased SK hynix's SSDs for nearly a decade now. As a next step, SK hynix is now expanding into the consumer market with its newest drives.

SK hynix Inc. Reports Third Quarter 2019 Results

SK hynix Inc. today announced financial results for its third quarter 2019 ended on September 30, 2019. The consolidated third quarter revenue was 6.84 trillion won while the operating profit amounted to 473 billion won and the net income 495 billion won. Operating margin and net margin for the quarter was 7%.

The revenue in the third quarter increased by 6% quarter-over-quarter (QoQ) as demand began to pick up. However, the operating profit fell by 26% QoQ as DRAM unit cost reduction was not enough to offset the price drop. DRAM bit shipments increased by 23% QoQ as the Company actively responded to the new products in the mobile market and purchases from some data center customers also increased. DRAM prices remained weak during the quarter, leading to a 16% drop in the average selling price, with the decline smaller than the previous quarter.

SK Hynix Starts Mass-Producing World's First 128-Layer 4D NAND

SK Hynix Inc. announced today that it has developed and starts mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK Hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

SK Hynix Reports Second Quarter 2019 Results

SK hynix Inc. today announced financial results for its second quarter 2019 ended on June 30, 2019. The consolidated second quarter revenue was 6.45 trillion won while the operating profit amounted to 638 billion won and the net income 537 billion won. Operating margin for the quarter was 10% and net margin was 8%.

As demand recovery did not meet expectations and price declines were steeper than expected, the revenue and the operating profit in the second quarter fell by 5% and 53%, respectively, quarter-over-quarter (QoQ). DRAM bit shipments increased by 13% QoQ as the Company actively responded to the mobile and PC DRAM markets, where demand growth was relatively high. However, DRAM prices remained weak and the average selling price dropped by 24%. For NAND Flash, the bit shipments increased by 40% QoQ because of demand recovery due to price declines, while the average selling price decreased by 25%.

SK Hynix Starts Mass-Producing World's First 128-Layer 4D NAND, Working on 176-Layer NAND

SK hynix Inc. announced today that it has developed and started mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

The new product provides the industry's highest density of 1 Tb for TLC NAND Flash. A number of companies including SK hynix have developed 1 Tb QLC (Quad-Level Cell) NAND products, but SK hynix is the first to commercialize the 1 Tb TLC NAND Flash. TLC accounts for more than 85% of the NAND Flash market with excellent performance and reliability.

SK Hynix Begins Sampling 96-layer 4D QLC NAND Flash Memory

SK Hynix Inc., announced today that it has delivered samples of new 1Tb (Terabit) QLC (Quadruple Level Cell) product to major SSD (Solid State Drive) Controller companies. The Company applied its own QLC technology to its world's first 96-Layer "CTF (Charge Trap Flash) based 4D (Four-Dimensional) NAND Flash (or 4D NAND)." SK Hynix intends to expand its NAND portfolio to 96-layer-based 1Tb QLC products in time for the QLC market opening and strengthen its responsiveness to the next-generation high-density memory market.

QLC stores four bits of data in one NAND cell, allowing higher density compared to TLC (Triple Level Cell) that stores three bits per cell. Using QLC, it is possible to develop high-density products with cost competitiveness. SK Hynix is able to secure the industry's top-level cost competitiveness through this product, which has reduced the area to less than 90% of the existing 3D-based QLC products.

SK Hynix Inc. Reports First Quarter 2019 Results

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

SK Hynix Launches World's First 'CTF-based 4D NAND Flash' (96-Layer 512Gb TLC)

SK Hynix today launched the world's first 96-Layer 512Gb CTF (Charge Trap Flash) based 4D NAND flash. Don't let the name trick you - it's still based on 3D TLC technology, but SK Hynix has gone and added a 4th dimension due to its pairing of charge trap flash technology in conjunction with PUC (Peri. Under Cell technology.

SK Hynix says that their approach is (obviously) better than the industry-wide 3D Floating Gate approach. The 4D NAND chip design results in a reduction of more than 30% in chip size, and increases bit productivity per wafer by 49% compared to the Company's 72-Layer 512Gb 3D NAND. Moreover, the product has 30% higher write and 25% higher read performance. Also, its data bandwidth is doubled to an industry-leading (in size) 64KB. Data I/O (Input Output) speed reaches 1,200Mbps (Megabits/sec) at 1.2 V.

SK Hynix Unveils 4D NAND Flash Memory Concept

3D NAND flash revolutionized flash storage as it used the third dimension (height) to stack multiple NAND flash layers, resulting in infinitesimally smaller footprint and reduced costs. SK Hynix believes that a "4-dimensional" NAND flash package is possible. Don't worry, such a stack doesn't look like a tesseract. Conventional 3D NAND flash relies on stacks of charge-trap flash (CTF) cells spatially located alongside its periphery block (which is responsible for wiring out each of the layers of the CTF stack). On a 2-D plane you'd be spending substrate real-estate on both the CTF and periphery block.

SK Hynix believes that the periphery block can be stacked along with the CTF stack, with microscopic vias wiring up the stack along the periphery, reducing the footprint of each cell stack. 4D stacking will also allow for greater number of CTF stacks per cell. Just to be clear, we're talking about stacks of cell and not stacks of NAND flash dies. The V5 cell-stack in SK Hynix's design entails 4 cells and periphery blocks sandwiched. The first implementation of this technology is a 96-layer 4D NAND flash chip with 512 Gb of capacity and TLC (3 bits per cell) density, although the technology is ready for QLC cells. This 512 Gb chip will begin sampling by the end of 2018, and the company is already working on a 1 Tb chip for 2019.
Return to Keyword Browsing
May 18th, 2022 20:18 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts