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SK hynix Inc. Reports Third Quarter 2019 Results

SK hynix Inc. today announced financial results for its third quarter 2019 ended on September 30, 2019. The consolidated third quarter revenue was 6.84 trillion won while the operating profit amounted to 473 billion won and the net income 495 billion won. Operating margin and net margin for the quarter was 7%.

The revenue in the third quarter increased by 6% quarter-over-quarter (QoQ) as demand began to pick up. However, the operating profit fell by 26% QoQ as DRAM unit cost reduction was not enough to offset the price drop. DRAM bit shipments increased by 23% QoQ as the Company actively responded to the new products in the mobile market and purchases from some data center customers also increased. DRAM prices remained weak during the quarter, leading to a 16% drop in the average selling price, with the decline smaller than the previous quarter.

SK Hynix Starts Mass-Producing World's First 128-Layer 4D NAND

SK Hynix Inc. announced today that it has developed and starts mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK Hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

SK Hynix Reports Second Quarter 2019 Results

SK hynix Inc. today announced financial results for its second quarter 2019 ended on June 30, 2019. The consolidated second quarter revenue was 6.45 trillion won while the operating profit amounted to 638 billion won and the net income 537 billion won. Operating margin for the quarter was 10% and net margin was 8%.

As demand recovery did not meet expectations and price declines were steeper than expected, the revenue and the operating profit in the second quarter fell by 5% and 53%, respectively, quarter-over-quarter (QoQ). DRAM bit shipments increased by 13% QoQ as the Company actively responded to the mobile and PC DRAM markets, where demand growth was relatively high. However, DRAM prices remained weak and the average selling price dropped by 24%. For NAND Flash, the bit shipments increased by 40% QoQ because of demand recovery due to price declines, while the average selling price decreased by 25%.

SK Hynix Starts Mass-Producing World's First 128-Layer 4D NAND, Working on 176-Layer NAND

SK hynix Inc. announced today that it has developed and started mass-producing the world's first 128-Layer 1 Tb (Terabit) TLC (Triple-Level Cell) 4D NAND Flash, only eight months after the Company announced the 96-Layer 4D NAND Flash last year.

The 128-Layer 1 Tb NAND chip offers the industry's highest vertical stacking with more than 360 billion NAND cells, each of which stores 3 bits, per one chip. To achieve this, SK hynix applied innovative technologies, such as "ultra-homogeneous vertical etching technology," "high-reliability multi-layer thin-film cell formation technology," and ultra-fast low-power circuit design, to its own 4D NAND technology.

The new product provides the industry's highest density of 1 Tb for TLC NAND Flash. A number of companies including SK hynix have developed 1 Tb QLC (Quad-Level Cell) NAND products, but SK hynix is the first to commercialize the 1 Tb TLC NAND Flash. TLC accounts for more than 85% of the NAND Flash market with excellent performance and reliability.

SK Hynix Begins Sampling 96-layer 4D QLC NAND Flash Memory

SK Hynix Inc., announced today that it has delivered samples of new 1Tb (Terabit) QLC (Quadruple Level Cell) product to major SSD (Solid State Drive) Controller companies. The Company applied its own QLC technology to its world's first 96-Layer "CTF (Charge Trap Flash) based 4D (Four-Dimensional) NAND Flash (or 4D NAND)." SK Hynix intends to expand its NAND portfolio to 96-layer-based 1Tb QLC products in time for the QLC market opening and strengthen its responsiveness to the next-generation high-density memory market.

QLC stores four bits of data in one NAND cell, allowing higher density compared to TLC (Triple Level Cell) that stores three bits per cell. Using QLC, it is possible to develop high-density products with cost competitiveness. SK Hynix is able to secure the industry's top-level cost competitiveness through this product, which has reduced the area to less than 90% of the existing 3D-based QLC products.

SK Hynix Inc. Reports First Quarter 2019 Results

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

SK Hynix Launches World's First 'CTF-based 4D NAND Flash' (96-Layer 512Gb TLC)

SK Hynix today launched the world's first 96-Layer 512Gb CTF (Charge Trap Flash) based 4D NAND flash. Don't let the name trick you - it's still based on 3D TLC technology, but SK Hynix has gone and added a 4th dimension due to its pairing of charge trap flash technology in conjunction with PUC (Peri. Under Cell technology.

SK Hynix says that their approach is (obviously) better than the industry-wide 3D Floating Gate approach. The 4D NAND chip design results in a reduction of more than 30% in chip size, and increases bit productivity per wafer by 49% compared to the Company's 72-Layer 512Gb 3D NAND. Moreover, the product has 30% higher write and 25% higher read performance. Also, its data bandwidth is doubled to an industry-leading (in size) 64KB. Data I/O (Input Output) speed reaches 1,200Mbps (Megabits/sec) at 1.2 V.

SK Hynix Unveils 4D NAND Flash Memory Concept

3D NAND flash revolutionized flash storage as it used the third dimension (height) to stack multiple NAND flash layers, resulting in infinitesimally smaller footprint and reduced costs. SK Hynix believes that a "4-dimensional" NAND flash package is possible. Don't worry, such a stack doesn't look like a tesseract. Conventional 3D NAND flash relies on stacks of charge-trap flash (CTF) cells spatially located alongside its periphery block (which is responsible for wiring out each of the layers of the CTF stack). On a 2-D plane you'd be spending substrate real-estate on both the CTF and periphery block.

SK Hynix believes that the periphery block can be stacked along with the CTF stack, with microscopic vias wiring up the stack along the periphery, reducing the footprint of each cell stack. 4D stacking will also allow for greater number of CTF stacks per cell. Just to be clear, we're talking about stacks of cell and not stacks of NAND flash dies. The V5 cell-stack in SK Hynix's design entails 4 cells and periphery blocks sandwiched. The first implementation of this technology is a 96-layer 4D NAND flash chip with 512 Gb of capacity and TLC (3 bits per cell) density, although the technology is ready for QLC cells. This 512 Gb chip will begin sampling by the end of 2018, and the company is already working on a 1 Tb chip for 2019.
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