NVIDIA has reportedly lowered its performance requirements for the HBM4 memory used in "Rubin" GPUs, as SK hynix and Samsung are reportedly struggling to meet the ambitious performance targets set by NVIDIA. According to a new note from SemiAnalysis, NVIDIA is reducing its specification requirements for the upcoming GPU generation. Originally, NVIDIA targeted a total bandwidth of 22 TB/s for the Rubin chip, but memory suppliers seem to be having difficulty meeting these requirements. Initial shipments are expected to achieve closer to 20 TB/s, which translates to approximately 10 Gbps per pin for HBM4. This indicates that NVIDIA's aggressive upgrade plan for "Vera Rubin" is facing a setback, and the final performance will differ slightly.

Interestingly, NVIDIA's initial target for the "Vera Rubin" VR200 NVL72 system was 13 TB/s in March 2025, which was later upgraded to 20.5 TB/s by September. At CES 2026, NVIDIA confirmed that the VR200 NVL72 system is now operating at 22 TB/s of bandwidth. Compared to AMD's Instinct MI455X accelerator, which has 19.6 TB/s, NVIDIA initially had lower system bandwidth. They addressed this by using faster DRAM and improving interconnects between CPUs, GPUs, and the entire system. However, as memory makers like SK hynix and Samsung struggle to meet NVIDIA's performance requirements, we will see HBM4 speeds of about 20 TB/s for the entire "Vera Rubin" system.

Micron Technology today announced the Micron 3610 NVMe SSD, the industry's first PCIe Gen 5 G9 QLC SSD for client computing - a breakthrough that redefines what's possible in performance, efficiency and capacity for mainstream PCs and ultra-thin laptops. Built on Micron's proven G9 NAND, the 3610 SSD achieves up to 11,000 MB/s sequential read speeds and 9,300 MB/s sequential write speeds. It offers the world's only 4 TB capacity in a compact single-sided M.2 2230 form factor, ideal for ultra-thin laptops and AI-capable devices. This innovation combines industry-leading Gen 5 speed with QLC economics, delivering next-level responsiveness without compromising battery life.

"The 3610 SSD combines cutting-edge PCIe Gen 5 technology, Micron's most-advanced G9 QLC NAND and a sleek, single-sided design to deliver premium performance, capacity and power efficiency," said Mark Montierth, senior vice president and general manager of Micron's Mobile and Client Business Unit. "The 3610 will enable ultra-thin devices that meet the growing demands of on-device AI, immersive streaming and performance-intensive workloads."

Kioxia America, Inc. today announced BG7 Series solid state drives (SSDs) - the first client solution to feature Kioxia Corporation's latest BiCS FLASH generation 8 3D flash memory with innovative CBA (CMOS directly Bonded to Array) technology. Designed for PC OEM customers, the BG7 Series offers an excellent balance of performance, features, and efficiency for commercial/consumer notebooks and desktops.

KIOXIA BG7 Series SSDs pass on the optimized performance and power efficiency of BiCS FLASH generation 8 to everyday applications. With random read/write up to 1,000,000 IOPS and sequential read up to 7,000 MB/s, the KIOXIA BG7 Series subsequently delivers approximately 10% and 16% performance improvement respectively compared to its BG6 Series predecessor. When it comes to power consumption, the BG7 Series optimizes power efficiency with approximately 67% improvement in sequential write operations compared to previous models, thanks to the adoption of CBA technology.