News Posts matching "Toshiba"

Return to Keyword Browsing

GIGABYTE Rolls Out AORUS RGB AIC NVMe SSD

GIGABYTE today rolled out the Aorus RGB AIC NVMe SSD series. Built in the full-height single-slot AIC form-factor with PCI-Express 3.0 x4 host interface, the card combines a Phison PS5012-E12 NVMe 1.3 controller with Toshiba BiCS3 TLC NAND flash, and comes in capacities of 512 GB and 1 TB, which are equipped with 512 MB and 1 GB of DRAM cache, respectively. The 1 TB variant offers sequential transfer speeds of up to 3,480 MB/s reads, with up to 3,080 MB/s writes; up to 610,000 IOPS 4K random reads, and up to 530,000 IOPS 4K random writes. The 512 GB variant, on the other hand, gives you up to 3,480 MB/s sequential reads, up to 2,100 MB/s sequential writes; up to 360,000 IOPS 4K random reads, and up to 510,000 IOPS random writes.

GIGABYTE deployed a passive cooling system, consisting of a thermal pad that makes contact with the controller, NAND flash chips, and DRAM chips on one side, and on the other side the card's top aluminium shroud that doubles up as a heatspreader. There's an equally thick aluminium back-plate which holds the card's acrylic RGB LED diffuser that runs along the top edge. You use GIGABYTE RGB Fusion software to control the lighting on this card. Both cards are backed by 5-year warranties, provided the card stays below their rated endurance of 800 TBW for the 512 GB model, and 1600 TBW for the 1 TB model. The company didn't reveal pricing.

Galaxy Unveils HOF M.2 PCIe SSD with Heat-pipe Based Heatsink

High-end M.2 NVMe SSDs are beginning to come with integrated heatsinks as overheating controllers impact sustained performance. The latest such drive is a new edition of the Hall of Fame (HOF) M.2 PCIe series from Galaxy, which come with a chunky aluminium heatsink, only this one isn't just another hunk of metal. This heatsink uses a flattened copper heat pipe to pull heat from the drive's hot components and spread it evenly along both sides of the aluminium block. The heat pipe makes direct contact with the drive's Phison PS5012-E12 8-channel controller and Toshiba-made 64-layer 3D TLC NAND flash chips.

The heatsink wraps around sideways of the drive and so it may not be a perfect fit for NVMe RAID cards with multiple M.2 slots side-by-side, although for most applications, such as the M.2 slot on the motherboard, the design could click. The drive comes in capacities of 512 GB, 1 TB, and 2 TB. All three models offer sequential read speeds of up to 3400 MB/s. The 1 TB and 2 TB models write at up to 2800 MB/s, while the 512 GB writes at up to 2000 MB/s. 4K random access performance of the 2 TB and 1 TB models are rated at up to 400,000 IOPS reads with up to 600,000 IOPS writes; and up to 400,000 IOPS reads with up to 540,000 IOPS writes for the 512 GB model. The drive is initially being launched in China, and could make its way to western markets under the Galax and KFA2 brands later this year.

Toshiba Consolidates Two of its Semiconductor Subsidiaries

Toshiba Electronic Devices & Storage Corporation (TDSC) today announced the consolidation of two of its subsidiaries, Toshiba Microelectronics Corporation (TOSMEC) and Toshiba Discrete Semiconductor Technology Corporation (TDIT), into a new company, Toshiba Electronic Device Solutions Corporation (TEDS). The move is expected to strengthen capabilities in proposing solutions and bringing greater efficiency to R&D for the semiconductor business. TEDS will start operation on April 1.

TDIT's business covers product development and technical sales for discrete semiconductors, while TOSMEC provides comprehensive services for system LSI, ranging from product planning, development and design to testing and failure analysis. Following the merger, TEDS will be responsible for product planning, product development, failure analysis and solution proposals for the semiconductor business, and will cooperate with TDSC as the engineering arm of its semiconductor business.

Toshiba Adds BiCS FLASH Enabled UFS to Lineup of Embedded Automotive Memory Products

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun sampling new Automotive JEDEC UFS Version 2.1 embedded memory solutions utilizing 3D flash memory. The new products are embedded flash memory devices that integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The sequential read and write performance are improved by approximately 6 percent and 33 percent, respectively, over existing devices.

The company's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the enhanced reliability required by various automotive applications. The lineup consists of four capacities: 32GB, 64GB, 128GB, and 256GB.

Toshiba Memory Expands NVMe SSD Portfolio Targeting Cloud Data Centers

Toshiba Memory America, Inc. the U.S.-based subsidiary of Toshiba Memory Corporation, announced availability of its XD5 Series NVMe SSD platform in a 2.5-inch, 7 mm low-profile form factor that is optimized for low-latency and performance consistency in read-intensive workloads. Developed for both data center and cloud environments, the new 2.5-inch form factor XD5 Series is ideal for NoSQL databases, large-scale-out data mining and analysis, and streaming applications. The XD5 Series is also well-suited for Open Compute Project (OCP) applications and systems.

Built on 64-layer BiCS FLASH TLC (3-bit-per-cell) 3D flash memory, and featuring a PCIe Gen 3 x4 interface, the new XD5 SSD 2.5-inch option delivers sequential read performance up to 2,700 megabytes per second (MB/s) and sequential write performance up to 895 MB/s with low active power consumption of 7 watts. At one drive write per day (DWPD), the XD5 Series can write nearly 4 terabytes (TB) of random data daily for five years at a consistent performance rate. Random read/write performance is specified at 250,000/21,000 Input/Output Operations per Second (IOPS) respectively, making the XD5 Series a predictable and reliable solution for read-intensive or heavy transactional workloads.

Toshiba and Western Digital Readying 128-layer 3D NAND Flash

Toshiba and its strategic ally Western Digital are readying a high-density 128-layer 3D NAND flash memory. In Toshiba's nomenclature, the chip will be named BiCS-5. Interestingly, despite the spatial density, the chip will implement TLC (3 bits per cell), and not the newer QLC (4 bits per cell). This is probably because NAND flash makers are still spooked about the low yields of QLC chips. Regardless, the chip has a data density of 512 Gb. With 33% more capacity than 96-layer chips, the new 128-layer chips could hit commercial production in 2020-21.

The BiCS-5 chip reportedly features a 4-plane design. Its die is divided into four sections, or planes, which can each be independently accessed; as opposed to BiCS-4 chips that use a 2-plane layout. This reportedly doubles the write performance per unit-channel to 132 MB/s from 66 MB/s. The die also reportedly uses CuA (circuitry under array), a design innovation in which logic circuitry is located in the bottom-most "layer," with data layers stacked above, resulting in 15 percent die-size savings. Aaron Rakers, a high-technology industry market analyst with Wells Fargo, estimates that Toshiba-WD's yields per 300 mm wafer could be as high as 85 percent.

Toshiba Unveils BiCS Flash Based e-MMC Ver. 5.1 Devices

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced that it will begin sampling new JEDEC e-MMC Ver. 5.1 compliant embedded flash memory products for consumer applications next month. The new products integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The company will continue to reinforce its market-leading position by delivering a broad, high-performance product lineup, including for applications that continue to need e-MMC as an embedded memory solution.

Toshiba Announces VMware vSAN Certification for PM5 Series Enterprise SAS SSDs

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced that its newly released PM5 Series of 12Gb/s (gigabits per second) enterprise SAS SSDs has earned VMware vSAN 6.7 certification. This certification enables TMA's flash-based PM5 storage devices to be shared across connected hosts in a VMware vSphere cluster. With the vSAN 6.7 certification, users can pool PM5 Series SSDs together in a single, distributed shared data store. This allows users to define the storage capabilities required (such as performance, capacity and availability) for each connected virtual machine (VM) within the VMware vSAN cluster. These capabilities not only further hyper-converged infrastructure (HCI) options in virtual environments, but also ensure that storage policies are administered and maintained within the PM5 Series with the utmost vSAN compatibility.

The certification of the PM5 Series enables VMware vSAN support for both hybrid and all-flash configurations using a two-tier storage architecture (capacity tier and cache tier). All write operations are sent to the cache tier and are subsequently de-staged to the capacity tier over time. When a PM5 Series SSD is deployed within a hybrid configuration, its cache tier is used as both a read and write cache, keeping hot data to improve performance. In an all-flash configuration, 100 percent of the cache tier is used for the write buffer. Given the benefits of tiered storage, PM5 Series SSDs are capable of meeting the demanding requirements of both enterprise and data center customers.

Toshiba Develops New Bridge Chip Using PAM 4 to Boost SSD Speed and Capacity

Toshiba Memory Corporation, the world leader in memory solutions, today announced the development of a bridge chip that realizes high-speed and large-capacity SSDs. Using developed bridge chips with a small occupied area and low-power consumption, the company has succeeded in connecting more flash memory chips with fewer high-speed signal lines than with the conventional method of no bridge chips. This result was announced in San Francisco on February 20, at the International Solid-State Circuits Conference 2019 (ISSCC 2019).

In SSDs, multiple flash memory chips are connected to a controller that manages their operation. As more flash memory chips are connected to a controller interface, operating speed degrades, so there are limits to the number of chips that can be connected. In order to increase capacity, it is necessary to increase the number of interfaces, but that results in an enormous number of high-speed signal lines connected to the controller, making it more difficult to implement the wiring on the SSD board.

LiteOn Unveils the MU3 Line of Mainstream SATA SSDs

LiteOn unveiled its latest MU3 line of mainstream SSDs. Built in the 7 mm-thick 2.5-inch form-factor with SATA 6 Gbps interface, the drive implements Toshiba's 64-layer BiCS 3D TLC NAND flash memory, and comes in capacities of 120 GB, 240 GB, and 480 GB. It offers sequential transfer rates of up to 560 MB/s reads, with up to 500 MB/s writes; and random-access throughput of up to 83,000 IOPS reads, with up to 89,000 IOPS writes. You get most features common to the segment, including NCQ, TRIM, SMART, and a 3-year warranty. LiteOn didn't reveal pricing.

Toshiba Unveils Industry's First UFS Ver. 3.0 Embedded Flash Memory Devices

Toshiba Memory Corporation, the world leader in memory solutions, has started sampling[1] the industry's first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices. The new line-up utilizes the company's cutting-edge, 96-layer BiCS FLASH 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.

The new devices integrate 96-layer BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.

Toshiba Shows Off 96-Layer BiCS FLASH Alongside Plethora of Enterprise SSDs at CES 2019

During our visit with Toshiba at CES 2019, we were shown not only new technologies that they will be rapidly deploying but a large number of SSDs for various market segments. The biggest draw was their 96-layer BiCS Flash with 4-bit-per-cell quadruple-level cell (QLC) technology. Toshiba is now pushing the boundary for capacity as a single chip device can reach 1.33 Tb (Terabits) while a single package device with 16-dies stacked architecture can reach 2.66 TB. That said, they are already sampling their 1 TB NVMe single package BG4 series SSDs to PC OEM customers in limited quantities.

These latest drives with their new BiCS FLASH technology incorporate everything into a tiny SSD that offers class-leading storage with sequential read performance reaching up to 2250 MB/s. Random read performance can also hit exceptional levels reaching up to 380,000 IOPS. For now, these BG4 based drives are targeted at ultra-thin PC notebooks, IoT embedded systems and will be made available in four capacities including; 128 GB, 256 GB, 512 GB and finally 1 TB. To meet expected demand, Toshiba will also be opening a facility in Japan dedicated to this latest technology in order to bring even higher capacities per NAND module.

Toshiba Memory Unveils 1TB Single Package PCIe Gen3 x4 SSD with 96-Layer 3D Flash

Toshiba Memory Corporation, the world leader in memory solutions, today announced the BG4 series, a new line-up of single package NVMe SSDs with capacities up to 1,024 GB, which places both innovative 96-layer 3D flash memory and an all-new controller into one package to deliver best-in-class read performance. The BG4 series is currently sampling to PC OEM customers in limited quantities, with general sample availability expected later in the second calendar quarter of 2019.

This new series of single package SSDs, featuring PCIe Gen 3.0 x4 lanes, offers sequential read performance up to 2,250 MB/s, and with improved flash management delivers industry-leading random read performance up to 380,000 IOPS. The BG4 single package SSDs are suitable for compact and performance-oriented systems, such as ultra-thin PC notebooks, IoT embedded systems and server boot in data centers.

Toshiba Announces 16-Terabyte MG08 Series Hard Disk Drives

Toshiba announces MG08 Series, the industry's largest capacity 16 TB Conventional Magnetic Recording (CMR) HDD. With 33% more capacity than today's widely adopted 12 TB drives, and 14% more capacity than prior 14 TB models, MG08 16 TB drives are compatible with the widest range of applications and operating systems, and adapted to mixed random and sequential read and write workloads in both cloud and traditional datacenter environments.

The MG08 Series is Toshiba's second-generation helium-sealed HDD family, and eighth-generation Enterprise Capacity HDD family. Toshiba has delivered its industry-leading 16 TB capacity and improved power efficiency by utilizing the 9-disk helium design, introduced last year in 14 TB models, and its own advanced precision laser welding process to ensure the helium remains sealed inside the drive case. The MG08 features 7,200 rpm performance, a 550 TB per year workload rating, a 2.5 million-hour MTTF, a 512 MB cache buffer, and a choice of SATA and SAS interfaces-all in an industry-standard, 3.5-inch form factor.

Toshiba Adds New 12TB and 14TB Models to N300 and X300 Hard Drive Families

Today Toshiba America Electronic Components Inc. is adding 12 TB and 14 TB models to both its N300 NAS Hard Drive and X300 Performance Hard Drive series. The new 12 TB and 14 TB models use a helium-sealed design, enabling the 3.5-inch mechanical design to deliver increased storage density with a lower hard drive operating power profile. Toshiba laser welding technology and hard drive case is designed to keep the helium securely sealed inside the drive enclosure.

The new 12 TB and 14 TB models operate at 7,200 rpm and come with an ultra-high 256MB data buffer. The N300 NAS and X300 models use Toshiba's advanced Stable Platter Technology to minimize vibrations by stabilizing the motor shaft at both ends for improved tracking accuracy and maximum performance during read and write operations.

Toshiba Expands Personal Storage Portfolio with 4TB CANVIO Hard Drives

Toshiba America Electronic Components Inc. today announces a new addition to its popular family of CANVIO external hard drives (HDDs), a 4 TB option in its ADVANCE, BASICS and READY series. The 4 TB option gives up to 33 percent extra storage (compared to 3 TB) for consumers and small and medium-sized businesses (SMBs) that want to store large files and back up their data. Using 1TB platter technology allows the 4 TB CANVIO models to maintain the same low-profile design as 3 TB models. All models support Windows and Mac operating systems and are compatible with both USB 3.0 and USB 2.0.

CANVIO HDDs combine a sleek, slim and stylish design with practical features such as a ramp-load design to prevent internal wear, plug-and-play functionality, backup and security software (available on the ADVANCE models), and a range of more flexible capacity options of 1 TB, 2 TB, and now 4 TB.

Advantech Launches High Capacity NVMe SSD with Wide Temperature Support

Advantech, a global leading provider of the industrial flash storage solution SQFlash, today releases a flagship NVMe SSD product-SQFlash 920 series. This new series product line brings high performance, density, and full function storage security support, which allows complete design-in service for industrial applications. Advantech's SQFlash 920 series NVMe SSD includes the very popular M.2 2280 form factor (SQF-CM8) as well as a 2.5" U.2 form factor (SQF-C25) using the latest Toshiba BiCS3 3D NAND Flash technology to achieve up to 8TB per drive capacity.

Heading towards AIoT applications such as auto-piloting and industrial machine vision, the SQFlash 920 series is an industry first wide-temperature 3D NAND SSD that comes with built-in smart thermal management and comprehensive security features. Using the latest controller technology that includes LDPC and a RAID-ECC error correction engine, SQFlash 920 series provides best-in-class reliability and the same endurance level as planer MLC NAND Flash. What's more, a cloud ready online predictive maintenance feature (PMQ) is also available to help users remotely monitor their SSD.

NAND Flash Prices May See Further Drops in 2019, DRAM to Remain Flat

Solid-state drives are cheaper than ever, thanks to systematic decline in NAND flash prices owing both to oversupply and increases in densities. NAND flash prices have already declined by 50 percent over 2018, according to a DigiTimes report, and will continue to slide through 2019. ADATA chairman Simon Chen commented that NAND flash makers haven't slowed down capacity expansions, and 2019 could witness an even bigger drop in prices than 2018.

Major NAND flash makers such as IMFlash Technology, SK Hynix, Samsung, Western Digital, Toshiba, have already taped out their 96-layer 3D NAND flash products, which could enter volume production in the first half of 2019. This could impact prices of existing swelling inventories of products based on 64-layer NAND flash. In theory, the 96-layer chips introduce 50 percent increases in densities. Adoption of newer technologies such as QLC (4 bits per cell) will expand densities even further. The same report also projects that DRAM prices could largely remain flat throughout 2019. Most NAND flash makers also happen to make DRAM, and could balance their NAND flash losses with DRAM profits.

Toshiba Memory Corporation Appoints Stacy J. Smith as Executive Chairman

Toshiba Memory Corporation (TMC) today announced the appointment of Stacy J. Smith as Executive Chairman, effective on October 1, 2018. Smith brings a long and proven track record of executive leadership to TMC. He has extensive international experience, having both lived and led organizations in the Asia-Pacific, Latin America, Europe, the Middle East and Africa. He will work closely with CEO Yasuo Naruke to provide overall leadership to the business.

Smith previously spent three decades at Intel leading organizations across multiple disciplines. In his role as President, Manufacturing, Operations and Sales, from 2016 to 2018, he led 40,000 employees involved in worldwide manufacturing, technology development, supply chain, pricing and sales. He also served as Intel's Chief Financial Officer for almost a decade and in this role also had responsibility for corporate strategy, M&A, and Intel Capital. Prior to that he served as Intel's Chief Information Officer and Vice President for Sales for Europe, the Middle East and Africa.

MyDigitalSSD Drops Pricing for Recently-Released BPX Pro M.2 NVMe SSDs by up to 25%

MyDigitalSSD must have began rethinking their BPX Pro SSD lineup's pricing as soon as they entered the market. A mere three weeks later, the company has announced an up to 25% price cut on its lineup, ranging from your choice of 240 GB ($99.99 originally, now $74.99), 480 GB ($149.99 originally, now $129.99), 960 GB ($279.99 originally, now $259.99) and 1920 GB ($599.99 originally, will be available later at $569.99) capacities.

As a reminder, the MyDigitalSSD BPX (Bullet Proof eXpress) Pro NVMe SSDs leverage the PCIe 3.1 x4 complex in the M.2 SSD form-factor to deliver staggering (up to) sequential read and write speeds of 3,400MB/s and 3,100MB/s, respectively - with not too shabby 4K random performance. These speeds are achieved using Phison's new E12 controller paired with Toshiba-made BiCS3 TLC NAND flash, one of the industry's strongest NAND options. With these price-cuts, they've become one of the cheapest options in the market, and are likely vying for the price/performance crown.

Toshiba Memory and Western Digital Celebrate the Opening of Fab 6

Toshiba Memory Corporation and Western Digital Corporation today celebrated the opening of a new state-of-the-art semiconductor fabrication facility, Fab 6, and the Memory R&D Center, at Yokkaichi operations in Mie Prefecture, Japan. Toshiba Memory started construction of Fab 6, a dedicated 3D flash memory fabrication facility, in February 2017. Toshiba Memory and Western Digital have installed cutting-edge manufacturing equipment for key production processes including deposition and etching. Mass production of 96-layer 3D flash memory utilizing the new fab began earlier this month.

Demand for 3D flash memory is growing for enterprise servers, data centers and smartphones, and is expected to continue to expand in the years ahead. Further investments to expand its production will be made in line with market trends. The Memory R&D Center, located adjacent to Fab 6, began operations in March of this year, and will explore and promote advances in the development of 3D flash memory. Toshiba Memory and Western Digital will continue to cultivate and extend their leadership in the memory business by actively developing initiatives aimed at strengthening competitiveness, advancing joint development of 3D flash memory, and making capital investments according to market trends.

Lite-On Unveils Powerful New SSD for Enterprise Workloads

At the Flash Memory Summit (FMS) 2018, LITE-ON Storage previewed the first EDSFF 1U solid-state drive (SSD) to emerge from its work with CNEX Labs. The revolutionary drive gained great interest among storage advocates.

In collaboration with such partners, LITE-ON delivers an innovative and highly efficient storage solution for scalable computing that aligns to Open Compute Project (OCP) specifications. The resulting EDSFF (Enterprise and Datacenter SSD Form Factor) SSD will provide a more cost-effective solution for enterprise and hyperscale cloud environments.

"Standard SSD solutions are great at handling many typical business workloads, but the complexity of storing information in both cloud and data center infrastructure requires SSD firmware to be flexible and adaptable," said Charlie Tseng, CEO of LITE-ON Storage. "LITE-ON's expertise in SSD firmware is perfect for the varying needs of customers."

Toshiba Looks to Take on Optane With XL-Flash Low-Latency 3D NAND Technology

Toshiba at the Flash Memory Summit announced that it's developing 3D XL-Flash technology - an approach towards the creation of low-latency, 3D NAND that can take on the surging Optane and 3D XPoint memory technologies. Toshiba says the new approach to low-latency NAND could bring latency values down to just 1/10 of current consumer, TLC NAND pricing.

The bet here is on economies of scale - a revised NAND architecture and deployment will still be able to take advantage of the huge fabrication capacity that Toshiba already enjoys (and Samsung, with its Z-NAND, similar in purpose to what Toshiba want to do with XL-Flash), thus avoiding the need for technology and production ramp-up that brought Optane's pricing up. Toshiba will be using its BiCS flash technology, but XL-Flash will be - at least at first - deployed in SLC implementations, so as to improve performance (7 microseconds program time against QLC's 30 microsecond). Of course, this will bring storage density down, but remember the target here is offering Optane-like performance and equal or better density at lower pricing.

Toshiba Announces New MN07 Series HDDs for NAS OEMs and Integrators

Toshiba, a committed technology leader, announces the MN07 Series 12 TB and 14 TB 3.5-inch hard disk drives for use in NAS platforms. The Toshiba MN07 Series utilizes a helium-sealed mechanical design to achieve the massive 14 TB and 12 TB capacity. The 14 TB model improves power efficiency by approximately 55 percent (W/GB) over the previous 10 TB "air" 7,200 rpm mechanical designs.

The MN07 Series is designed for use in NAS appliances with eight or more drive bays and is suitable for NAS file and object storage applications that require disk drives with workload ratings of up to 180 TB per year. The MN07 models feature vibration compensation technology and advanced Format (AF) 512e sector technology. Additionally, both devices offer 24/7 operability, superior reliability with MTTF of 1.0 Million hours, and are compatible with popular 3rd-party, 3.5-inch NAS enclosures.

Toshiba Breaks Ground on Biggest, Most Advanced BiCS FLASH Fabrication Facility in Kitakami City, Japan

Toshiba Memory Corporation, the world leader in memory solutions, today held a groundbreaking ceremony for the first semiconductor fabrication facility (fab), called K1, in Kitakami, Iwate prefecture, in northeastern Japan. On its completion in autumn 2019, the facility will be one of the most advanced manufacturing operations in the world, dedicated to production of 3D flash memory.

Toshiba Memory continues to advance technologies in flash memory. The company is now leading the way forward with advances in its BiCS FLASH , its proprietary 3D flash memory.
Return to Keyword Browsing