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HP EX920 1 TB

1 TB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The HP EX920 is a solid-state drive in the M.2 2280 form factor, launched on July 9th, 2018. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the HP EX920 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. HP has installed 64-layer TLC NAND flash on the EX920, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 200 GB, once it is full, writes complete at 800 MB/s. The EX920 is rated for sequential read speeds of up to 3,200 MB/s and 1,800 MB/s write; random IO reaches 350K IOPS for read and 250K for writes.
At its launch, the SSD was priced at 285 USD. The warranty length is set to five years, which is an excellent warranty period. HP guarantees an endurance rating of 650 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Jul 9th, 2018
Price at Launch: 285 USD
Part Number: 2YY47AA#ABC
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.73 W (Idle)
Unknown (Avg)
6.2 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Rebranded: BW29F2T08EWHAF (Rebranded by Biwin)
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: NT5CC256M16CP-DI
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 1,800 MB/s
Random Read: 350,000 IOPS
Random Write: 250,000 IOPS
Endurance: 650 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 200 GB
(dynamic only)
Speed when Cache Exhausted: approx. 800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

Native TLC Write speeds post pSLC Cache: ~ 800 MB/s (Avg)
TLC Write speeds w/ datafolding: ~ 620 MB/s (Avg)

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Jun 15th, 2024 22:07 EDT change timezone

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