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Lexar NM610 1 TB

1 TB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
Back
Back
PCB Front
PCB Front
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Lexar NM610 is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Lexar NM610 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Lexar has installed 64-layer TLC NAND flash on the NM610, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 136 GB, once it is full, writes complete at 275 MB/s. The NM610 is rated for sequential read speeds of up to 2,100 MB/s and 1,600 MB/s write; random IO reaches 188K IOPS for read and 156K for writes.
At its launch, the SSD was priced at 116 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Lexar guarantees an endurance rating of 500 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2020
Price at Launch: 116 USD
Part Number: LNM610-1TRBNA
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.49 W (Idle)
2.3 W (Avg)
3.3 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Rebranded: N2TTE1B1FEB1
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,100 MB/s
Sequential Write: 1,600 MB/s
Random Read: 188,000 IOPS
Random Write: 156,000 IOPS
Endurance: 500 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: approx. 136 GB
(dynamic only)
Speed when Cache Exhausted: approx. 275 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Jun 2nd, 2024 09:29 EDT change timezone

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