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Micron 5210 ION 7.5 TB

7.5 TB
Capacity
88SS1074
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Rickmer - Computerbase
Back
PCB Front
Rickmer - Computerbase
PCB Front
PCB Back
Rickmer - Computerbase
PCB Back
DRAM
Rickmer - Computerbase
DRAM
Flash
Rickmer - Computerbase
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Micron 5210 ION is a solid-state drive in the 2.5" form factor, launched on May 21st, 2018. It is available in capacities ranging from 960 GB to 7.5 TB. This page reports specifications for the 7.5 TB variant. With the rest of the system, the Micron 5210 ION interfaces using a SATA 6 Gbps connection. The SSD controller is the 88SS1074 Dean from Marvell, a DRAM cache chip is available. Micron has installed 64-layer QLC NAND flash on the 5210 ION, the flash chips are made by Micron. The 5210 ION is rated for sequential read speeds of up to 540 MB/s and 360 MB/s write; random IOPS reach up to 90K for reads and 4K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 11213 TBW, a good value.

Solid-State-Drive

Capacity: 7.5 TB (7680 GB)
Variants: 960 GB 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 1039.4 GB / 14.5 %
Production: Active
Released: May 21st, 2018
Part Number: MTFDDAK7T6QDE-2AV1ZABYY
Market: Enterprise

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: Unknown (Idle)
Unknown (Avg)
6.3 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1074 Dean
Architecture: ARM 32-bit ARM9/ARMv5
Core Count: Dual-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: N18A FortisFlash
Part Number: NW947
Rebranded: MT29F4T08GMHAFJ4:A
Type: QLC
Technology: 64-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 16 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 20 nm
Die Size: 157 mm²
(6.5 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 127 µs
Program Time (tProg): 3000 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 503 MB/s
Die Write Speed: 21 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 3072 Pages
Plane Size: 684 Blocks

DRAM Cache

Type: DDR3-1600 CL11
Name: MT41K512M16HA-125 (D9STQ)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 540 MB/s
Sequential Write: 360 MB/s
Random Read: 90,000 IOPS
Random Write: 4,500 IOPS
Endurance: 11213 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.8
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Enterprise
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

tR Average as pSLC mode: 52 µs
tPROG with overhead: 3000 µs (Avg 21.3 MB/s per die)

May 9th, 2024 13:28 EDT change timezone

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