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Netac N930e Pro 1 TB (SM2263XT + SK Hynix V6)

1 TB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Netac N930e Pro is a solid-state drive in the M.2 2280 form factor, launched on July 22nd, 2022. It is available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Netac N930e Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Netac has installed 128-layer TLC NAND flash on the N930e Pro, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The N930e Pro is rated for sequential read speeds of up to 2,130 MB/s and 1,720 MB/s write; random IOPS reach up to 250K for reads and 220K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Netac guarantees an endurance rating of 600 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Jul 22nd, 2022
Part Number: NT01N930E-001T-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V6
Part Number: H25BFT8D4B8R-BDJ
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,130 MB/s
Sequential Write: 1,720 MB/s
Random Read: 250,000 IOPS
Random Write: 220,000 IOPS
Endurance: 600 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

Each die has 7 SGSs with 3 SGDs.

May 10th, 2024 05:57 EDT change timezone

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