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Patriot Burst 120 GB

120 GB
Capacity
Phison S11
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Patriot Burst was a solid-state drive in the 2.5" form factor, launched in 2018, that is no longer in production. It was available in capacities ranging from 120 GB to 960 GB. This page reports specifications for the 120 GB variant. With the rest of the system, the Patriot Burst interfaces using a SATA 6 Gbps connection. The SSD controller is the PS3111-S11-13 from Phison, a DRAM cache is not available. Patriot has installed 64-layer TLC NAND flash on the Burst, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The Burst is rated for sequential read speeds of up to 560 MB/s and 540 MB/s write; random IO reaches 50K IOPS for read and 40K for writes.
At its launch, the SSD was priced at 31 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Patriot guarantees an endurance rating of 75 TBW, a good value.

Solid-State-Drive

Capacity: 120 GB
Variants: 120 GB 240 GB 480 GB 960 GB
Overprovisioning: 16.2 GB / 14.5 %
Production: End-of-life
Released: 2018
Price at Launch: 31 USD
Part Number: PBU120GS25SSDR
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS3111-S11-13
Architecture: ARM 32-bit
Core Count: Single-Core
Frequency: 200 MHz
Foundry: UMC
Process: 40 nm
Flash Channels: 2
Chip Enables: 8

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: Unknown
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 560 MB/s
Sequential Write: 540 MB/s
Random Read: 50,000 IOPS
Random Write: 40,000 IOPS
Endurance: 75 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

In order to improve performance, Phison implemented a way that the controller utilizes it's internal 32 MiB of SRAM as some kind of "Pit-stop" that is allocated for incoming Write request in order to improve performance since it's a very quick to access and fast RAM. This implementation was called Smart Cache Flush.
This SmartCacheFlush technology allows incoming data to only have a “pit stop” in the cache and then move to the NAND flash at once. If the flash is jammed due to particular file sizes (such as random 4KB data), the cache will be treated as an “organizer”, consolidating incoming data into groups before written into the flash to improve write amplification.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

May 12th, 2024 16:56 EDT change timezone

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