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PNY CS3150 XLR8 (w/ heatsink) 1 TB

1 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The PNY CS3150 XLR8 (w/ heatsink) is a solid-state drive in the M.2 2280 form factor, launched on November 14th, 2023. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the PNY CS3150 XLR8 (w/ heatsink) interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. PNY has installed 232-layer TLC NAND flash on the CS3150 XLR8 (w/ heatsink), the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 112 GB, once it is full, writes complete at 1822 MB/s. Copying data out of the SLC cache (folding) completes at 900 MB/s. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The CS3150 XLR8 (w/ heatsink) is rated for sequential read speeds of up to 11,500 MB/s and 8,500 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. PNY guarantees an endurance rating of 700 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Nov 14th, 2023
Part Number: M280CS3150XHS-1TB-RB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 2.8 W (Idle)
7.3 W (Avg)
10.2 W (Max)

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Part Number: NY195
Rebranded: MT29F2T08EELCHD4-QA:C
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 2 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4-4266
Name: SK Hynix H9HCNNNBKUMLXR-NEE
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx32

Performance

Sequential Read: 11,500 MB/s
Sequential Write: 8,500 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 700 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 112 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1822 MB/s
Cache Folding Speed: 900 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Unknown

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

May 9th, 2024 02:18 EDT change timezone

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