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PNY CS900 8 TB (Micron N18A)

8 TB
Capacity
Phison S11
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The PNY CS900 is a solid-state drive in the 2.5" form factor, launched on March 12th, 2018. It is available in capacities ranging from 4 TB to 8 TB. This page reports specifications for the 8 TB variant. With the rest of the system, the PNY CS900 interfaces using a SATA 6 Gbps connection. The SSD controller is the PS3111-S11-13 from Phison, a DRAM cache is not available. PNY has installed 64-layer QLC NAND flash on the CS900, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The CS900 is rated for sequential read speeds of up to 560 MB/s and 540 MB/s write.
At its launch, the SSD was priced at 950 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. PNY guarantees an endurance rating of 5695 TBW, a good value.

Solid-State-Drive

Capacity: 8 TB (8000 GB)
Variants: 4 TB 8 TB
Hardware Versions:
Overprovisioning: 741.4 GB / 10.0 %
Production: Active
Released: Mar 12th, 2018
Price at Launch: 950 USD
Part Number: SSD7CS900-8TB-RB
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.30 W (Idle)
2.0 W (Avg)
Unknown (Max)

Controller

Manufacturer: Phison
Name: PS3111-S11-13
Architecture: ARM 32-bit
Core Count: Single-Core
Frequency: 200 MHz
Foundry: UMC
Process: 40 nm
Flash Channels: 2
Chip Enables: 8

NAND Flash

Manufacturer: Micron
Name: N18A FortisFlash
Type: QLC
Technology: 64-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: Unknown
ONFI: 4.0
Topology: Floating Gate
Process: 20 nm
Die Size: 157 mm²
(6.5 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 127 µs
Program Time (tProg): 3000 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 503 MB/s
Die Write Speed: 21 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 3072 Pages
Plane Size: 684 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 560 MB/s
Sequential Write: 540 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 5695 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.7
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Drive:

Newer variants might feature Micron's 96-Layer N28A FortisFlash

Controller:

In order to improve performance, Phison implemented a way that the controller utilizes it's internal 32 MiB of SRAM as some kind of "Pit-stop" that is allocated for incoming Write request in order to improve performance since it's a very quick to access and fast RAM. This implementation was called Smart Cache Flush.
This SmartCacheFlush technology allows incoming data to only have a “pit stop” in the cache and then move to the NAND flash at once. If the flash is jammed due to particular file sizes (such as random 4KB data), the cache will be treated as an “organizer”, consolidating incoming data into groups before written into the flash to improve write amplification.

NAND Die:

tR Average as pSLC mode: 52 µs
tPROG with overhead: 3000 µs (Avg 21.3 MB/s per die)

May 3rd, 2024 22:52 EDT change timezone

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