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Raspberry Pi SSD 512 GB (Samsung PM991a OEM)

512 GB
Capacity
Samsung Pablo
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2230
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Raspberry Pi SSD is a solid-state drive in the M.2 2230 form factor, launched on October 23rd, 2024. It is available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Raspberry Pi SSD interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Pablo (S4LR033) from Samsung, a DRAM cache is not available. Raspberry Pi has installed 128-layer TLC NAND flash on the SSD, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The SSD is rated for sequential read speeds of up to 3,100 MB/s and 1,800 MB/s write; random IOPS reach up to 350K for reads and 320K for writes.
At its launch, the SSD was priced at 45 USD. The warranty length is set to five years, which is an excellent warranty period. The TBW rating for the Raspberry Pi SSD 512 GB is unknown.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Oct 23rd, 2024
Price at Launch: 45 USD
Part Number: MZVLQ512HBLU-00$00/07
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name:
Pablo (S4LR033)
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Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Process: 19 nm
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 1,800 MB/s
Random Read: 350,000 IOPS
Random Write: 320,000 IOPS
Endurance: Unknown
Warranty: 5 Years
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Jun 17th, 2025 10:46 CDT change timezone

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