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Samsung 870 QVO 8 TB

8 TB
Capacity
Samsung MKX Metis
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
PCB Back
nl.Hardware.Info
PCB Back
Flash
nl.Hardware.Info
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 870 QVO is a solid-state drive in the 2.5" form factor, launched on June 30th, 2020. It is available in capacities ranging from 1 TB to 8 TB. This page reports specifications for the 8 TB variant. With the rest of the system, the Samsung 870 QVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MKX (Metis S4LR059) from Samsung, a DRAM cache chip is available. Samsung has installed 92-layer QLC NAND flash on the 870 QVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 78 GB, once it is full, writes complete at 160 MB/s. The 870 QVO is rated for sequential read speeds of up to 560 MB/s and 530 MB/s write; random IOPS reach up to 98K for reads and 88K for writes.
At its launch, the SSD was priced at 850 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Samsung guarantees an endurance rating of 2880 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 8 TB (8000 GB)
Variants: 1 TB 2 TB 4 TB 8 TB
Overprovisioning: 741.4 GB / 10.0 %
Production: Active
Released: Jun 30th, 2020
Price at Launch: 850 USD
Part Number: MZ-77Q8T0
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.04 W (Idle)
3.2 W (Avg)
5.5 W (Max)

Controller

Manufacturer: Samsung
Name: MKX (Metis S4LR059)
Architecture: ARM 32-bit Cortex-R4
Core Count: Triple-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V5
Part Number: K9XVGB8J1A-CCK0
Type: QLC
Technology: 92-layer
Speed: 1200 MT/s
Capacity: 8 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Process: 19 nm
Die Size: 136 mm²
(7.5 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 100 per NAND String
92.0% Vertical Efficiency
Read Time (tR): 110 µs
Program Time (tProg): 2000 µs
Block Erase Time (tBERS): 3.5 ms
Die Write Speed: 18 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4FCE6Q4HM-BGCG
Capacity: 8192 MB
(1x 8192 MB)
Organization: 64Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 530 MB/s
Random Read: 98,000 IOPS
Random Write: 88,000 IOPS
Endurance: 2880 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 78 GB
(72 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 160 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

NAND Speed Bus: Up to 1400 MT/s.

May 11th, 2024 19:20 EDT change timezone

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