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Samsung 990 Evo 2 TB

2 TB
Capacity
Samsung Piccolo
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
The Samsung 990 Evo is a solid-state drive in the M.2 2280 form factor, launched in 2024. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 990 Evo interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Piccolo (S4LY022) from Samsung, a DRAM cache is not available. Samsung has installed 133-layer TLC NAND flash on the 990 Evo, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 114 GB, once it is full, writes complete at 1700 MB/s. Copying data out of the SLC cache (folding) completes at 1200 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Evo is rated for sequential read speeds of up to 5,000 MB/s and 4,200 MB/s write; random IOPS reach up to 700K for reads and 800K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2024
Part Number: MZVL82T0HELA
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown
Interface:PCIe 5.0 x2

Controller

Manufacturer: Samsung
Name: Piccolo (S4LY022)
Architecture: ARM 32-bit Cortex-R8
Core Count: 6-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6 Prime
Part Number: K9DVGB8J1E-CCK0
Type: TLC
Technology: 133-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
97.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,200 MB/s
Random Read: 700,000 IOPS
Random Write: 800,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 114 GB
(108 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 1700 MB/s
Cache Folding Speed: 1200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

4-sub planes

Apr 27th, 2024 15:06 EDT change timezone

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