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Samsung 990 Pro 2 TB (Pascal + V8 1Tb)

2 TB
Capacity
Samsung Pascal
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
The Samsung 990 Pro is a solid-state drive in the M.2 2280 form factor, launched in 2023. It is available in capacities ranging from 2 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 990 Pro interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Pascal (S4LV008) from Samsung, a DRAM cache chip is available. Samsung has installed 236-layer TLC NAND flash on the 990 Pro, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 226 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Pro is rated for sequential read speeds of up to 7,450 MB/s and 6,900 MB/s write; random IO reaches 1400K IOPS for read and 1550K for writes.
At its launch, the SSD was priced at 309 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2023
Price at Launch: 309 USD
Part Number: MZVL72T0HBLD
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: 0.84 W (Idle)
3.9 W (Avg)
5.9 W (Max)

Controller

Manufacturer: Samsung
Name: Pascal (S4LV008)
Architecture: ARM 32-bit Cortex-R8
Foundry: Samsung FinFET
Process: 8 nm
Flash Channels: 8 @ 2,000 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(11.5 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-4266
Name: SAMSUNG K4F6E6S4HM-BGCJ
Capacity: 2048 MB
(1x 2048 MB)

Performance

Sequential Read: 7,450 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,550,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 226 GB
(216 GB Dynamic
+ 10 GB Static)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Could be another penta-core controller just like it's predecessor.

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.
May 9th, 2024 16:57 EDT change timezone

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