Capacity: | 2 TB (2000 GB) |
---|---|
Variants: | 2 TB 4 TB |
Overprovisioning: | 185.4 GB / 10.0 % |
Production: | Active |
Released: | 2023 |
Price at Launch: | 309 USD |
Part Number: | MZVL72T0HBLD |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 2.0 |
Power Draw: |
0.84 W (Idle) 3.9 W (Avg) 5.9 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | Pascal (S4LV008) |
Architecture: | ARM 32-bit Cortex-R8 |
Foundry: | Samsung FinFET |
Process: | 8 nm |
Flash Channels: | 8 @ 2,000 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V8 |
Type: | TLC |
Technology: | 236-layer |
Speed: | 2400 MT/s |
Capacity: | 2 chips @ 8 Tbit |
Toggle: | 5.0 |
Topology: | Charge Trap |
Die Size: | 89 mm² (11.5 Gbit/mm²) |
Dies per Chip: | 8 dies @ 1 Tbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Read Time (tR): | 40 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 4.0 ms |
Die Read Speed: | 1600 MB/s |
Die Write Speed: | 164 MB/s |
Page Size: | 16 KB |
Type: | LPDDR4-4266 |
---|---|
Name: | SAMSUNG K4F6E6S4HM-BGCJ |
Capacity: |
2048 MB
(1x 2048 MB) |
Sequential Read: | 7,450 MB/s |
---|---|
Sequential Write: | 6,900 MB/s |
Random Read: | 1,400,000 IOPS |
Random Write: | 1,550,000 IOPS |
Endurance: | 1200 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 226 GB
(216 GB Dynamic + 10 GB Static) |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
This section lists other SSDs in our database using the exact same hardware components |
Controller:Could be another penta-core controller just like it's predecessor. NAND Die:Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s. |