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Samsung PM981 2 TB

2 TB
Capacity
Samsung Phoenix
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM981 is a solid-state drive in the M.2 2280 form factor, launched in August 2017. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung PM981 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the PM981, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The PM981 is rated for sequential read speeds of up to 3,200 MB/s and 2,400 MB/s write; random IOPS reach up to 300K for reads and 330K for writes.
At its launch, the SSD was priced at 305 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung PM981 2 TB is unknown.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Aug 2017
Price at Launch: 305 USD
Part Number: MZVLB2T0HMLB-00000/07
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: Unknown (Idle)
Unknown (Avg)
5.9 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9UKGY8SCD-DCK0
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: LPDDR3
Name: Samsung
Capacity: 2048 MB
(1x 2048 MB)

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,400 MB/s
Random Read: 300,000 IOPS
Random Write: 330,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

Oct 5th, 2024 02:30 EDT change timezone

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