Capacity: | 2 TB (2048 GB) |
---|---|
Variants: | 256 GB 512 GB 1 TB 2 TB |
Overprovisioning: | 140.7 GB / 7.4 % |
Production: | Active |
Released: | Aug 2017 |
Price at Launch: | 305 USD |
Part Number: | MZVLB2T0HMLB-00000/07 |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.2 |
Power Draw: |
Unknown (Idle) Unknown (Avg) 5.9 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | Phoenix (S4LR020) |
Architecture: | ARM 32-bit Cortex-R7 |
Core Count: | 5-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Part Number: | K9UKGY8SCD-DCK0 |
Type: | TLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | 2 chips @ 8 Tbit |
Toggle: | 3.0 |
Topology: | Charge Trap |
Process: | 20 nm |
Die Size: | 128 mm² (4.0 Gbit/mm²) |
Dies per Chip: | 16 dies @ 512 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3.5 ms |
Endurance: (up to) |
7000 P/E Cycles
(20000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 768 Pages |
Plane Size: | 5748 Blocks |
Type: | LPDDR3 |
---|---|
Name: | Samsung |
Capacity: |
2048 MB
(1x 2048 MB) |
Sequential Read: | 3,200 MB/s |
---|---|
Sequential Write: | 2,400 MB/s |
Random Read: | 300,000 IOPS |
Random Write: | 330,000 IOPS |
Endurance: | Unknown |
Warranty: | 3 Years |
MTBF: | 1.5 Million Hours |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |