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Samsung PM9B1 512 GB

512 GB
Capacity
88SS1322
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9B1 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung PM9B1 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the 88SS1322 Whistler Plus from Marvell, a DRAM cache is not available. Samsung has installed 128-layer TLC NAND flash on the PM9B1, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9B1 is rated for sequential read speeds of up to 3,500 MB/s and 2,500 MB/s write; random IOPS reach up to 430K for reads and 400K for writes.
The SSD's price at launch is unknown. The TBW rating for the Samsung PM9B1 512 GB is unknown, too.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB
Overprovisioning: 35.2 GB / 7.4 %
Production: Unknown
Released: 2022
Part Number: MZVL4512HBLU-00BL7
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Marvell
Name: 88SS1322 Whistler Plus
Architecture: Arm® Cortex®-R5
Core Count: Triple-Core
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Part Number: K9OUGY8J5B-CCK0
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,500 MB/s
Random Read: 430,000 IOPS
Random Write: 400,000 IOPS
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Oct 5th, 2024 05:50 EDT change timezone

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