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Samsung SM883 3.8 TB

3.8 TB
Capacity
Samsung MJX Maru
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
PCB Front
proSSD
PCB Front
DRAM
proSSD
DRAM
Flash
proSSD
Flash
SSD Controller
Controller
The Samsung SM883 was a solid-state drive in the 2.5" form factor, launched on April 10th, 2018, that is no longer in production. It was available in capacities ranging from 240 GB to 3.8 TB. This page reports specifications for the 3.8 TB variant. With the rest of the system, the Samsung SM883 interfaces using a SATA 6 Gbps connection. The SSD controller is the MJX Maru (S4LR030) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer MLC NAND flash on the SM883, the flash chips are made by Samsung. The SM883 is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IOPS reach up to 97K for reads and 29K for writes.
At its launch, the SSD was priced at 799 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 21024 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Variants: 240 GB 480 GB 960 GB 1.9 TB 3.8 TB
Overprovisioning: 519.7 GB / 14.5 %
Production: End-of-life
Released: Apr 10th, 2018
Price at Launch: 799 USD
Part Number: MZ-MZ7KH3T8HALS-00005
Market: Enterprise

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 1.4 W (Idle)
2.8 W (Avg)
3.7 W (Max)

Controller

Manufacturer: Samsung
Name: MJX Maru (S4LR030)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9UUGB8J1A-DCK0
Type: MLC
Technology: 64-layer
Speed: 800 MT/s .. 1400 MT/s
Capacity: 8 chips @ 4 Tbit
Topology: Charge Trap
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4FBE6D4HM-BGCH
Capacity: 4096 MB
(1x 4096 MB)
Organization: 32Gx32

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 97,000 IOPS
Random Write: 29,000 IOPS
Endurance: 21024 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller Clock speed: Up to 1 GHz.

Apr 29th, 2024 07:09 EDT change timezone

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