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Seagate FireCuda 520 2 TB (E16 + Kioxia BiCS4)

2 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Seagate FireCuda 520 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Seagate FireCuda 520 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Seagate has installed 96-layer TLC NAND flash on the FireCuda 520, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The FireCuda 520 is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IOPS reach up to 750K for reads and 700K for writes.
At its launch, the SSD was priced at 430 USD. The warranty length is set to five years, which is an excellent warranty period. Seagate guarantees an endurance rating of 3600 TBW, a good value.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2019
Price at Launch: 430 USD
Part Number: ZP2000GM3A002
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 0.03 W (Idle)
6.0 W (Avg)
Unknown (Max)

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABHG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2400
Capacity: Unknown
Organization: x8

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 750,000 IOPS
Random Write: 700,000 IOPS
Endurance: 3600 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

May 20th, 2024 12:02 EDT change timezone

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