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Transcend MTE250S 4 TB

4 TB
Capacity
SM2264F
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
The Transcend MTE250S is a solid-state drive in the M.2 2280 form factor, launched on October 26th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Transcend MTE250S interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2264F from Silicon Motion, a DRAM cache chip is available. Transcend has installed 112-layer TLC NAND flash on the MTE250S, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The MTE250S is rated for sequential read speeds of up to 7,500 MB/s and 6,700 MB/s write; random IO reaches 540K IOPS for read and 440K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Transcend guarantees an endurance rating of 3120 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4096 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 281.3 GB / 7.4 %
Production: Active
Released: Oct 26th, 2022
Part Number: TS4TMTE250S
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2264F
Architecture: ARM 32-bit Cortex-R8
Core Count: Quad-Core
Frequency: 700 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: DDR4-3200 CL22
Name: SAMSUNG K4A8G165WC-BCWE (C-die)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,500 MB/s
Sequential Write: 6,700 MB/s
Random Read: 540,000 IOPS
Random Write: 440,000 IOPS
Endurance: 3120 TBW
Warranty: 5 Years
MTBF: 3.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

Clock confirmed by SMI

NAND Die:

Typ. Endurance: 1700 P/E Cycle
Endurance could be from 3000 to 5000 P/E Cycles

May 3rd, 2024 05:00 EDT change timezone

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