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Western Digital RED SN700 1 TB

1 TB
Capacity
WD 20-82-00700
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Hexus
PCB Front
DRAM
Hexus
DRAM
Flash
Hexus
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital RED SN700 is a solid-state drive in the M.2 2280 form factor, launched on September 28th, 2021. It is available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital RED SN700 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-00700-A2 Triton MP28 from WD, a DRAM cache chip is available. Western Digital has installed 96-layer TLC NAND flash on the RED SN700, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The RED SN700 is rated for sequential read speeds of up to 3,430 MB/s and 3,000 MB/s write; random IOPS reach up to 515K for reads and 560K for writes.
At its launch, the SSD was priced at 145 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 2000 TBW, a high value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Sep 28th, 2021
Price at Launch: 145 USD
Part Number: WDS100T1R0C
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.10 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: WD
Name: 20-82-00700-A2 Triton MP28
Architecture: ARM 32-bit Cortex-R
Core Count: Triple-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: 009537 512G (Rebranded by SanDisk)
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL18
Name: Micron MT40A512M16LY-075:E (D9WFH)
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,430 MB/s
Sequential Write: 3,000 MB/s
Random Read: 515,000 IOPS
Random Write: 560,000 IOPS
Endurance: 2000 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 1.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

May 2nd, 2024 02:17 EDT change timezone

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