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Western Digital SN530 512 GB

512 GB
Capacity
WD 20-82-10048
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2230
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN530 is a solid-state drive in the M.2 2230 form factor, launched on January 7th, 2021. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Western Digital SN530 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-10048-A1 Polaris MP16 from WD, a DRAM cache is not available. Western Digital has installed 96-layer TLC NAND flash on the SN530, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The SN530 is rated for sequential read speeds of up to 2,400 MB/s and 1,750 MB/s write; random IO reaches 315K IOPS for read and 230K for writes.
At its launch, the SSD was priced at 130 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Jan 7th, 2021
Price at Launch: 130 USD
Part Number: SDBPTPZ-512G
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 0.08 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: WD
Name: 20-82-10048-A1 Polaris MP16
Architecture: ARM 32-bit Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: (Rebranded as SanDisk)
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 1 chip @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,400 MB/s
Sequential Write: 1,750 MB/s
Random Read: 315,000 IOPS
Random Write: 230,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

May 12th, 2024 17:25 EDT change timezone

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